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Cypress Semiconductor Corp CY7C1061GE-10BVXI
- Part No.:
- CY7C1061GE-10BVXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 48-VFBGA
- Description:
- IC SRAM 16MBIT PARALLEL 48VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:8,640
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Product details
Overview
CY7C1061GE-10BVXI from Infineon Technologies (formerly Cypress) is a 16-Mbit (1M × 16-bit) CMOS static RAM with embedded single-bit error-correcting code (ECC), TTL-compatible I/O, and ERR output flag. It operates across three voltage ranges (1.65–2.2 V, 2.2–3.6 V, 4.5–5.5 V), delivers 10 ns access time, and supports byte-wide writes via BHE/ BLE control. Used in industrial control modules requiring data integrity under radiation-prone or long-term operation conditions.
For engineers reviewing the CY7C1061GE-10BVXI datasheet, CY7C1061GE-10BVXI pinout, CY7C1061GE-10BVXI application, or CY7C1061GE-10BVXI equivalent, key selection criteria include ECC-enabled read reliability, multi-voltage support, ERR signal assertion timing, and 48-ball VFBGA (6 × 8 × 1.0 mm) package compatibility with high-density PCB layouts.
Technical Context
This SRAM implements on-die Hamming-code ECC logic that detects and corrects single-bit errors during read cycles without external circuitry. The ERR pin asserts high only when correction occurs, enabling system-level fault logging without interrupt overhead.
It supports dual chip enable (CE1/CE2) and single CE configurations, with byte enable (BHE/ BLE) allowing independent upper/lower 8-bit writes. Address range spans A0–A19 (1 M words), and data retention holds at 1.0 V - critical for battery-backed systems during brownout events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 16 Mbit (1,048,576 × 16-bit words) - provides sufficient buffer space for real-time firmware stacks or sensor data logging in industrial controllers. |
| Access Time (tAA) | 10 ns at VCC = 4.5–5.5 V or 2.2–3.6 V - enables direct interfacing with 100 MHz microcontrollers without wait states. |
| ECC Function | Embedded single-bit error correction with ERR output - eliminates need for external ECC logic and reduces BOM count in safety-critical memory subsystems. |
| Supply Voltage Ranges | 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V - allows reuse across legacy 5 V, modern 3.3 V, and ultra-low-power 1.8 V designs without level-shifting. |
| Standby Current (ISB2) | 20 mA typical at VCC = 5 V, TA = 25 °C - supports low-power sleep modes in always-on edge devices with infrequent memory access. |
| Data Retention Voltage | 1.0 V minimum - ensures nonvolatile data hold during deep power-down or capacitor-sustained backup in UPS or metering applications. |
Pinout & Package
Package: 48-ball VFBGA (6 × 8 × 1.0 mm), RoHS-compliant, industrial temperature grade (–40 °C to +85 °C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A19 | Address Inputs | 20-bit address bus supporting full 1M-word addressing; A19 placement varies by variant (Ball G2 or H6) per datasheet Figure 2 and Figure 6. |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit parallel interface; high-impedance when CE/OE/BLE/BHE inactive - prevents bus contention in shared-memory systems. |
| CE1 / CE2 | Dual Chip Enable Inputs | CE = LOW when CE1 = LOW and CE2 = HIGH; enables hierarchical memory mapping in multi-SRAM systems with bank-select logic. |
| WE | Write Enable Input | Active-low write strobe; synchronous with address setup - ensures deterministic write timing for deterministic firmware execution. |
| OE | Output Enable Input | Controls output drivers independently of CE - allows read-modify-write sequences without toggling chip select. |
| BHE / BLE | Byte Enable Inputs | BHE enables I/O8–I/O15; BLE enables I/O0–I/O7 - supports 8-bit peripheral interfacing on 16-bit buses without glue logic. |
| ERR | Error Indication Output | Open-drain output asserted HIGH during single-bit correction - directly interfaces with MCU GPIO interrupt pins for error telemetry. |
| VCC / VSS | Power / Ground | Dual VCC balls (Balls C1, D1) and multiple VSS balls (A1, E1, F1, H1, etc.) - reduce IR drop and improve noise immunity in high-speed operation. |
Key Features
| Feature | Design Value |
|---|---|
| On-die ECC engine | Corrects single-bit errors in real time during read cycles without CPU intervention or additional latency. |
| Multi-voltage operation | Three independent VCC ranges eliminate need for external regulators or level shifters across product generations. |
| ERR output signaling | Dedicated open-drain pin indicates correction event - enables firmware-triggered diagnostics without polling or memory scrubbing overhead. |
| Byte-select write control | Independent BHE/ BLE inputs allow partial-word writes - essential for compact protocol buffers and register-mapped peripherals. |
| Low-voltage data retention | Maintains stored data down to 1.0 V - supports seamless transition to backup power in smart grid meters and PLCs. |
Applications
| Industrial PLC Memory Buffer | Radiation-Tolerant Sensor Node |
|---|---|
|
Use Scenario: Real-time I/O scanning and ladder logic execution in programmable logic controllers where memory corruption must be detected and corrected without system reset. IC Role / Device Role / Timing Role: Primary working memory with ECC-enforced data integrity; ERR pin feeds into watchdog supervisor IC for fault logging. Use Value: Eliminates uncorrectable memory errors in extended field deployments, reducing unplanned downtime in factory automation systems. |
Use Scenario: Remote environmental monitoring node operating in high-background-radiation zones (e.g., nuclear facility perimeter sensors). IC Role / Device Role / Timing Role: Nonvolatile data logger storing timestamped sensor readings; 1.0 V retention sustains data during brief power loss. Use Value: Prevents silent data corruption in mission-critical telemetry, satisfying IEC 61508 SIL-2 functional safety requirements. |
| Medical Diagnostic Imaging Cache | Avionics Display Frame Buffer |
|
Use Scenario: Temporary storage of ultrasound or X-ray image tiles during preprocessing before GPU transfer in portable diagnostic equipment. IC Role / Device Role / Timing Role: High-bandwidth 16-bit SRAM interfaced directly to ARM Cortex-A series SoC; 10 ns tAA avoids pipeline stalls. Use Value: Enables deterministic frame capture latency and eliminates retransmission delays caused by memory bit flips. |
Use Scenario: Primary frame buffer for cockpit display units requiring guaranteed pixel integrity over 20,000-hour service life. IC Role / Device Role / Timing Role: Dual-chip-enable configuration supports redundant memory banks; ERR signals trigger automatic display refresh from backup copy. Use Value: Meets DO-254 hardware design assurance level A (DAL-A) for flight-critical visual systems through built-in error resilience. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ECC SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C316098B-10TIN | No integrated ERR pin; ECC status requires software polling of status register; 10 ns access at 3.3 V only. | Lacks hardware-interrupt-capable error reporting - unsuitable for real-time systems requiring immediate fault response. | Select only if board layout lacks routing space for ERR trace and firmware can tolerate polling latency. |
| IS61WV102416BLL-10MLI | 10 ns access at 3.3 V; no ECC; lower standby current (15 µA); 44-pin TSOP II package. | Requires external ECC controller (e.g., FPGA logic) - increases design complexity and verification burden. | Choose only when cost sensitivity outweighs reliability requirements and external ECC implementation is already available. |
Compared with AS7C316098B-10TIN and IS61WV102416BLL-10MLI, CY7C1061GE-10BVXI uniquely delivers hardware-asserted ERR signaling, multi-voltage support, and pin-compatible ECC correction - making it the only option meeting both industrial uptime and functional safety constraints without added logic.
Availability
CY7C1061GE-10BVXI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics displays, and radiation-hardened sensor nodes requiring stable component supply across extended product lifecycles.
Supply support for CY7C1061GE-10BVXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-reliability memory portfolio for industrial, automotive, and aerospace applications.
CY7C1061GE belongs to the Cypress SRAM family designed specifically for systems demanding deterministic timing, data integrity, and multi-voltage interoperability in harsh environments.
FAQ
What voltage ranges does CY7C1061GE-10BVXI support, and how does this affect system design?
CY7C1061GE-10BVXI supports three discrete VCC ranges: 1.65–2.2 V, 2.2–3.6 V, and 4.5–5.5 V. This allows direct integration into mixed-voltage systems without level shifters - for example, interfacing a 1.8 V FPGA core with a 5 V legacy backplane while maintaining full 10 ns performance in each domain. Each range has distinct ICC and timing specifications validated per JEDEC standards.
How does the ERR pin function during ECC correction, and what electrical interface does it require?
The ERR pin is an open-drain output that asserts HIGH only during successful single-bit error correction in a read cycle. It requires an external pull-up resistor (typically 4.7 kΩ to VCC_IO) and can directly drive MCU interrupt pins. No internal pull-up exists, and the pin remains high-impedance when no correction occurs - eliminating false triggers during normal operation.
Can CY7C1061GE-10BVXI operate in single-chip-enable mode, and how is CE configured?
Yes - CY7C1061GE-10BVXI supports both single and dual CE configurations. In single CE mode, CE1 is internally tied to VCC and CE2 is unused; the device responds to CE (pin 23 in TSOP I, Ball D2 in VFBGA) going LOW. Pin configuration variants (e.g., BVXI vs BVJXI) determine CE topology and A19 placement, as documented in Figures 2, 4, 5, and 6 of datasheet 001-81540 Rev. *T.
Is data retention guaranteed at 1.0 V, and under what conditions does it apply?
Data retention at 1.0 V is specified across the full industrial temperature range (–40 °C to +85 °C) with all address and data lines held static and VCC ≥ 1.0 V. It applies only during standby (CE HIGH, WE HIGH, OE HIGH) and does not require clock or refresh. This enables use in capacitor-backed systems where main power may drop briefly but data must persist - verified per JEDEC JESD22-A117 reliability testing.
CY7C1061GE-10BVXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 48-VFBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous
- Memory Size:
- 16Mbit
- Memory Organization:
- 1M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 2.2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-VFBGA (6x8)
CY7C1061GE-10BVXI FAQ
1.How can I place an order for CY7C1061GE-10BVXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1061GE-10BVXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1061GE-10BVXI reliable?
The price and inventory of CY7C1061GE-10BVXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GE-10BVXI is usually 5 days.
3.What payment methods are accepted for CY7C1061GE-10BVXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GE-10BVXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1061GE-10BVXI?
CY7C1061GE-10BVXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1061GE-10BVXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1061GE-10BVXI?
For technical support, including CY7C1061GE-10BVXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GE-10BVXI requirements.
6.How does Aetrix verify that CY7C1061GE-10BVXI is sourced from the original manufacturer or authorized distributors?
All CY7C1061GE-10BVXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GE-10BVXI meets industry standards.
7.What is the process for return or replacement of CY7C1061GE-10BVXI?
All CY7C1061GE-10BVXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GE-10BVXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1061GE-10BVXI part is unused and in its original packaging.
Return procedure for CY7C1061GE-10BVXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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