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Cypress Semiconductor Corp CY7C1061GN18-15ZSXI

Part No.:
CY7C1061GN18-15ZSXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
54-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixCY7C1061GN18-15ZSXI.pdf
Description:
IC SRAM 16MBIT PAR 54TSOP II
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,749

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Product details

Overview

CY7C1061GN18-15ZSXI from Cypress Semiconductor is a 16-Mbit (1,048,576 × 16) asynchronous CMOS static RAM with dual chip enable (CE1/CE2), 15 ns access time, 2.2–3.6 V operation, and 48-ball VFBGA (8 × 9.5 × 1 mm) packaging. It supports byte-wide writes via BHE/BLE controls and automatic power-down during deselection, deployed in industrial embedded controllers requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1061GN18-15ZSXI datasheet, CY7C1061GN18-15ZSXI pinout, CY7C1061GN18-15ZSXI application, or CY7C1061GN18-15ZSXI equivalent, key selection factors include its 15 ns tAA timing at 3.3 V, 20 µA typical CMOS standby current (ISB2), dual CE architecture for hierarchical memory mapping, and VFBGA package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a fully asynchronous interface with independent byte write enables (BHE/BLE) enabling selective 8-bit updates without read-modify-write cycles. Its dual chip enable logic (CE1 LOW + CE2 HIGH = active) allows seamless integration into multi-bank memory systems with bank-select granularity.

The device features TTL-compatible I/Os, 1.0 V data retention capability, and automatic power-down when deselected-reducing system-level idle power by disabling internal arrays and drivers. It operates across industrial temperature (–40°C to +85°C) with validated DC/AC performance at 2.2–3.6 V supply.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 1,048,576 words × 16 bits - provides 2 MB of fast, non-refreshing storage for real-time firmware or buffer applications
Access Time (tAA) 15 ns at VCC = 3.0–3.6 V - guarantees deterministic read latency for 66 MHz bus interfaces
Supply Voltage Range 2.2 V to 3.6 V - supports mixed-voltage SoC designs and battery-backed operation down to 2.2 V
Active Current (ICC) 90 mA typical at 100 MHz - enables low-power microcontroller co-location without thermal derating
Standby Current (ISB2) 20 µA typical - reduces quiescent power in always-on edge nodes during sleep modes
Data Retention Voltage 1.0 V minimum - maintains stored contents during brown-out or backup battery operation
Package 48-ball VFBGA (8 × 9.5 × 1 mm, BVXI grade) - supports fine-pitch routing and thermal dissipation in compact modules

Pinout & Package

Package: 48-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 8 mm × 9.5 mm × 1.0 mm body, 0.5 mm ball pitch, BVXI marking. RoHS-compliant, Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
A0–A19 Address Inputs 20-bit address bus supporting full 1M-word addressing; no internal latching - requires stable setup/hold relative to CE/OE
I/O0–I/O7 Lower Byte Data I/O Bi-directional 8-bit data path enabled only when BLE = LOW; high-impedance when disabled or during write
I/O8–I/O15 Upper Byte Data I/O Bi-directional 8-bit data path enabled only when BHE = LOW; independent control enables partial-word writes
CE1, CE2 Dual Chip Enable Inputs Logical AND function: CE1 = LOW and CE2 = HIGH activates memory; enables hierarchical decoding in multi-SRAM systems
WE Write Enable Active-LOW write strobe; initiates write cycle when CE1/CE2 active; overrides OE during write
OE Output Enable Active-LOW read strobe; enables output drivers only when CE1/CE2 active and WE = HIGH
BLE, BHE Byte Low/High Enable Independent 8-bit write masks; allow granular byte updates without disturbing adjacent bytes in same word
VCC, VSS Power Supply Pins Two VCC (balls E1, F1) and three VSS (balls A1, H1, G2) provide low-impedance decoupling paths for noise-sensitive operation

Key Features

Feature Design Value
15 ns access time at 3.3 V Enables direct interfacing with 66 MHz microcontrollers without wait states in burst or single-cycle modes
Dual Chip Enable (CE1/CE2) Supports up to four independent memory banks using external logic, simplifying address decoding in FPGA-based systems
Independent BHE/BLE controls Eliminates need for external byte-masking logic or software bit manipulation during partial-word writes
20 µA typical ISB2 standby current Reduces system standby power by >95% vs. legacy 5 V SRAMs, critical for battery-powered telemetry devices
1.0 V data retention Preserves configuration or sensor logs during extended power loss, compatible with single-cell Li-ion backup

Applications

Industrial PLC I/O Buffering Medical Imaging Frame Store

Use Scenario: Real-time acquisition and buffering of analog input/output channel data in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Asynchronous SRAM serving as dual-port-accessible frame buffer between ADC/DAC peripherals and ARM Cortex-M7 core.

Use Value: 15 ns tAA ensures sub-100 ns round-trip read/write latency, meeting <200 µs I/O update deadlines without DMA arbitration overhead.

Use Scenario: Temporary storage of uncompressed grayscale image frames (1024×768 @ 16 bpp) in portable ultrasound devices before JPEG compression.

IC Role / Device Role / Timing Role: High-bandwidth, low-power memory for burst-mode pixel ingestion from parallel CMOS image sensors.

Use Value: 90 mA ICC at 100 MHz supports sustained 16-bit bus throughput >1.2 GB/s, matching sensor line-rate requirements.

Avionics Sensor Fusion Hub Test & Measurement Digitizer Cache

Use Scenario: Aggregating inertial measurement unit (IMU), GPS, and barometric data streams in DO-254-certified flight control subsystems.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for time-stamped sensor fusion algorithms running on radiation-tolerant FPGAs.

Use Value: Dual CE architecture enables isolated memory partitioning per sensor domain, preventing cross-domain timing interference.

Use Scenario: Capturing high-speed analog waveforms (≥100 MS/s) in benchtop oscilloscopes with deep memory depth requirements.

IC Role / Device Role / Timing Role: Low-latency, low-jitter memory buffer interfacing directly with 14-bit ADCs and FPGA-based trigger engines.

Use Value: 1.0 V data retention allows safe holdover during power cycling between capture sessions, preserving calibration metadata.

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
ISSI IS61WV102416BLL-15NLI Same density, 15 ns access, but single CE and no BHE/BLE - uses UB/LB instead of BLE/BHE; 48-pin TSOP I package Lacks byte-enable independence; requires external logic for true 8-bit masking in mixed-byte systems Select when board layout prioritizes TSOP repairability over VFBGA density and byte-granular write efficiency
Winbond W9825G6JH-15 SDRAM, not SRAM - requires refresh controller, clocked interface, and initialization sequence; 15 ns CL = 2 latency Higher bandwidth but non-deterministic access due to refresh cycles and command scheduling Choose only if system already includes SDRAM controller and needs >2× sequential bandwidth at cost of real-time predictability

Compared with IS61WV102416BLL-15NLI, CY7C1061GN18-15ZSXI offers superior byte-write flexibility and lower standby power; versus W9825G6JH-15, it delivers guaranteed worst-case latency and zero refresh overhead-critical for hard real-time embedded control.

Availability

CY7C1061GN18-15ZSXI is available at Aetrix Electronics and suitable for industrial PLC I/O buffering, medical imaging frame stores, and avionics sensor fusion hubs requiring stable component supply, long-term lifecycle support, and RoHS-compliant VFBGA packaging.

Supply support for CY7C1061GN18-15ZSXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and consumer markets.

The CY7C1061GN series was designed specifically for deterministic, low-power, asynchronous memory applications in space-constrained industrial and medical electronics where refresh-free operation and byte-selective writes are mandatory.

FAQ

Is CY7C1061GN18-15ZSXI pin-compatible with CY7C1061GN18-10ZSXI?

No. While both share the same 48-ball VFBGA (BVXI) package and pinout, the -10 variant specifies 10 ns access time and higher ICC (110 mA typical), requiring stricter timing margins and thermal design. The -15 variant's 15 ns tAA relaxes setup/hold timing but does not permit substitution without revalidation of memory controller timing constraints.

Does CY7C1061GN18-15ZSXI support 1.8 V operation?

Yes, but only within the 2.2–3.6 V specified operating range. The device is not rated for 1.8 V VCC: minimum valid VCC is 2.2 V per the "Operating Range" table (page 6). Operation below 2.2 V risks data corruption, increased access time, or failure to meet ISB2 specifications.

Can BHE and BLE be asserted simultaneously for full 16-bit writes?

Yes. When both BHE and BLE are LOW, all 16 I/O pins (I/O0–I/O15) are enabled for concurrent read or write. This is the standard mode for full-word transfers and is electrically identical to asserting a single 16-bit enable signal-no timing penalty or functional restriction applies.

What is the meaning of "ZSXI" in the part number CY7C1061GN18-15ZSXI?

"ZSXI" denotes the industrial temperature grade (–40°C to +85°C), Pb-free RoHS-compliant packaging, and 48-ball VFBGA (BVXI) package variant. "Z" = green/RoHS, "S" = VFBGA, "X" = industrial temp, "I" = standard reliability level-per Cypress ordering code definitions (page 14 of datasheet 001-93680 Rev. *C).

CY7C1061GN18-15ZSXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
54-TSOP (0.400", 10.16mm Width)
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
16Mbit
Memory Organization:
1M x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
1.65V ~ 2.2V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
54-TSOP II

CY7C1061GN18-15ZSXI FAQ

1.How can I place an order for CY7C1061GN18-15ZSXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1061GN18-15ZSXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1061GN18-15ZSXI reliable?

The price and inventory of CY7C1061GN18-15ZSXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1061GN18-15ZSXI is usually 5 days.

3.What payment methods are accepted for CY7C1061GN18-15ZSXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1061GN18-15ZSXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1061GN18-15ZSXI?

CY7C1061GN18-15ZSXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1061GN18-15ZSXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1061GN18-15ZSXI?

For technical support, including CY7C1061GN18-15ZSXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1061GN18-15ZSXI requirements.

6.How does Aetrix verify that CY7C1061GN18-15ZSXI is sourced from the original manufacturer or authorized distributors?

All CY7C1061GN18-15ZSXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1061GN18-15ZSXI meets industry standards.

7.What is the process for return or replacement of CY7C1061GN18-15ZSXI?

All CY7C1061GN18-15ZSXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1061GN18-15ZSXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1061GN18-15ZSXI part is unused and in its original packaging.

Return procedure for CY7C1061GN18-15ZSXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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