Cypress Semiconductor Corp CY7C1079DV33-12BAXI

Overview

CY7C1079DV33-12BAXI from Infineon Technologies (formerly Cypress) is a 32-Mbit (4 M × 8) high-speed CMOS static RAM with 12 ns access time, 3.3 V ±0.3 V operation, and 48-ball FBGA packaging. It features automatic power-down on deselect, TTL-compatible I/O, and 2.0 V data retention - deployed in industrial control memory buffers requiring deterministic timing and low standby current.

For engineers reviewing the CY7C1079DV33-12BAXI datasheet, CY7C1079DV33-12BAXI pinout, CY7C1079DV33-12BAXI application, or CY7C1079DV33-12BAXI equivalent, key selection criteria include tAA ≤12 ns read latency, ISB2 = 50 µA CMOS standby current, dual CE option support, and FBGA-48 thermal resistance (θJA = 30.91 °C/W).

Technical Context

The device implements a synchronous, non-volatile-retentive SRAM architecture with independent address decoding for 4,194,304 × 8-bit organization. Read and write operations are controlled by CE, OE, and WE signals with defined setup/hold timing windows - including tSD = 7 ns data setup and tHZOE = 7 ns output disable delay.

It supports two chip enable configurations: single CE (pin CE) and dual CE (CE1/CE2 logic-combined), where CE activation requires CE1 = LOW and CE2 = HIGH. Power management includes automatic CMOS standby (ISB2 = 50 µA) and data retention at VCC = 2.0 V with ICCDR ≤ 50 µA.

Key Specifications

Pinout & Package

Package: 48-ball Fine-Pitch Ball Grid Array (FBGA), 6 mm × 8 mm body, 0.8 mm ball pitch, JEDEC MO-276AB compliant. Pinout corresponds to single CE configuration per Figure 1 of datasheet 001-50282 Rev. *F.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with AS7C34098B-12TIN and IS61LV25616AL-12MLI, CY7C1079DV33-12BAXI uniquely combines 4 M × 8 density, FBGA thermal efficiency, dual CE flexibility, and guaranteed 2.0 V data retention - making it optimal for space-constrained, power-critical, and fail-safe embedded memory designs.

Availability

CY7C1079DV33-12BAXI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging frame stores, and avionics data loggers requiring stable component supply, long-term lifecycle support, and qualified automotive-grade traceability.

Supply support for CY7C1079DV33-12BAXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and memory solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q200.

This device belongs to Infineon's legacy Cypress SRAM product line, engineered for high-reliability embedded systems demanding deterministic timing, low-power standby, and robust data retention under voltage stress - especially in industrial automation and safety-critical instrumentation.

FAQ

What is the maximum operating temperature range for CY7C1079DV33-12BAXI?

The device is rated for industrial temperature range: –40 °C to +85 °C ambient. This is validated per datasheet Section "Operating Range" and confirmed by thermal resistance specs (θJA = 30.91 °C/W) and derating curves in DC/AC electrical characteristics tables. Operation beyond +85 °C risks exceeding junction temperature limits and violating ISB2/ICC specifications.

Does CY7C1079DV33-12BAXI support both single and dual chip enable configurations?

Yes - the FBGA package offers both variants. The -12BAXI suffix denotes the single CE version (pin CE only). Dual CE versions (e.g., -12BAI) use separate CE1/CE2 pins with internal logic combining; CE = LOW only when CE1 = LOW and CE2 = HIGH. Pin configuration diagrams on page 3 confirm physical layout differences between variants.

Can this SRAM retain data at 2.0 V while fully deselected?

Yes - VDR = 2.0 V minimum is specified for data retention (page 6), and ISB2 = 50 µA applies under CMOS standby conditions (CE > VCC – 0.3 V, VIN outside valid logic range). The device enters retention mode automatically upon CE deassertion at reduced VCC, with tCDR = 0 ns - meaning retention begins immediately upon voltage transition below 3.0 V.

Is the 48-ball FBGA package lead-free and RoHS compliant?

Yes - the "X" in -12BAXI indicates lead-free (Pb-free) construction per JEDEC J-STD-609A Class 3 marking, and the device meets RoHS Directive 2011/65/EU. This is documented in the "Ordering Information" section (page 11) and confirmed in Infineon's material declarations for Cypress legacy SRAMs.