Cypress Semiconductor Corp CY7C1143KV18-400BZI
- Part No.:
- CY7C1143KV18-400BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1143KV18-400BZI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1143KV18 from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.0-cycle read latency, and DDR interfaces on independent read/write ports. It operates at 400 MHz (2.0 ns cycle time), supports 1.8 V core supply and 1.4–1.8 V I/O (VDDQ), and delivers 900 MT/s data throughput via HSTL I/O in a 165-ball FBGA package. Used in high-speed networking line cards for packet buffering.
For engineers reviewing the CY7C1143KV18 datasheet, CY7C1143KV18 pinout, CY7C1143KV18 application, or CY7C1143KV18 equivalent, key selection criteria include its 2.0-cycle latency mode (DOFF = HIGH), echo clock timing (CQ/CQ), QVLD validity signaling, and depth expansion support via RPS/WPS port selects.
Technical Context
The CY7C1143KV18 implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths-eliminating bus turnaround-and uses dual input clocks (K/K) to latch address/data on alternating rising edges. Its internal 256K × 18 array quad-bank organization enables concurrent access while maintaining full data coherency.
It integrates a PLL for precise DDR data placement, supports programmable output impedance via ZQ calibration, and provides JTAG 1149.1 boundary scan. The DOFF pin toggles between QDR II+ (2-cycle latency, up to 450 MHz) and QDR I (1-cycle latency, ≤167 MHz) operation modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1M × 18 configuration) |
| Max Clock Frequency | 400 MHz - defines 2.5 ns cycle time for timing budgeting in SerDes or switch fabric interfaces |
| Read Latency | 2.0 clock cycles - fixed pipeline delay from RPS assertion to first valid Q[x] word, synchronized to CQ |
| Data Interface | DDR on both ports - transfers 4 × 18-bit words per 2-cycle burst, achieving 900 MT/s effective rate |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - enables interoperability with 1.5 V or 1.8 V FPGA I/O banks |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - matches standard BGA footprint for high-density PCB routing |
| I/O Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 400 MHz with controlled slew and termination |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K / K | Input clocks | Rising edges sample all synchronous inputs (A, D[x], RPS, WPS, BWS); K drives read outputs, K drives write inputs |
| CQ / CQ | Echo clocks | Free-running, phase-aligned copies of K/K used by FPGA/ASIC to capture Q[x] data without skew compensation |
| Q[17:0] | Read data outputs | DDR outputs delivering four sequential 18-bit words; tristated when RPS is deasserted |
| D[17:0] | Write data inputs | DDR inputs accepting four sequential 18-bit words; ignored unless WPS is asserted |
| RPS / WPS | Port select controls | Active-LOW enables dedicated read/write transactions; allows independent depth expansion across multiple devices |
| BWS[1:0] | Byte write selects | Active-LOW signals controlling D[8:0] (BWS0) and D[17:9] (BWS1); enable partial writes without read-modify-write |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to mark first valid word in burst; critical for FIFO pointer synchronization |
| DOFF | PLL disable control | LOW disables PLL, reverting device to QDR I mode (1-cycle latency, max 167 MHz); HIGH enables QDR II+ mode |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates data bus turnaround overhead, enabling full-duplex memory access in packet forwarding engines |
| Four-word burst architecture | Reduces address bus frequency by 4× versus single-word access - lowers routing congestion in 10G+ switch ASIC interfaces |
| Echo clocks (CQ/CQ) | Provide deterministic, low-jitter timing reference for capturing DDR outputs - removes need for dynamic deskew logic in FPGA receivers |
| QVLD validity signal | Explicitly marks first valid data word in burst - enables reliable handshaking with downstream logic without clock-domain crossing uncertainty |
| Programmable output impedance (ZQ) | Allows on-die calibration to match 50 Ω system trace impedance - improves signal integrity without external termination resistors |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G Ethernet switch fabric ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with concurrent read/write capability to sustain line-rate traffic without backpressure. Use Value: 900 MT/s throughput and 2.0-cycle latency ensure deterministic queuing delay under sustained 40 Gbps load. |
Use Scenario: Frame buffering in OTN/framer-based telecom line cards requiring burst-aligned data transfer. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfacing directly with SerDes PHYs using echo-clock–driven capture. Use Value: CQ/CQ alignment and QVLD eliminate setup/hold violations at 400 MHz, reducing FPGA timing closure effort. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband processors. IC Role / Device Role / Timing Role: Low-latency, coherent memory for real-time DSP pipelines with strict deterministic access timing. Use Value: Full data coherency and pipelined reads ensure latest computed values are always available without software intervention. |
Use Scenario: Storing high-speed digital test vectors in ATE systems requiring precise timing alignment across multiple channels. IC Role / Device Role / Timing Role: Burst-mode pattern generator memory synchronized to system clock and echo clocks for sub-nanosecond skew control. Use Value: DOFF-controlled mode switching allows validation across QDR I and QDR II+ timing margins during qualification testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 1M × 18 QDR II, 250 MHz max, no PLL, no echo clocks, LVDS I/O | Limited to lower bandwidth; requires external clock forwarding and LVDS termination | Select when system clock <250 MHz and LVDS interface is already standardized |
| ISSI IS61WV102418B | 1M × 18 sync SRAM, single-port, 167 MHz, no burst, CMOS I/O | No concurrent access; no DDR; no echo clocks; higher latency per word | Select only for cost-sensitive, non-concurrent, low-bandwidth control-plane buffers |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1143KV18 uniquely delivers 400 MHz DDR throughput with echo-clock–assisted capture and true dual-port concurrency-enabling line-rate packet processing where timing margin and bandwidth are critical.
Availability
CY7C1143KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and ATE pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C1143KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.
The QDR® II+ SRAM product line targets ultra-low-latency, high-throughput data buffering in switch fabric, packet processing, and baseband subsystems where deterministic timing and concurrent access are mandatory.
FAQ
What is the function of the DOFF pin?
The DOFF pin controls the internal PLL: when HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency and up to 450 MHz clock support; when LOW, the PLL is disabled and the device reverts to QDR I mode with 1-cycle latency and maximum 167 MHz operation. This allows backward compatibility and simplified timing validation across speed grades.
How does the QVLD signal improve system timing reliability?
QVLD is edge-aligned with CQ and CQ and asserts precisely on the rising edge corresponding to the first valid word in the four-word burst. This eliminates ambiguity in data-valid detection, enabling synchronous capture logic in FPGAs to avoid metastability and simplify timing closure-especially critical at 400 MHz where setup/hold margins are tight.
Can CY7C1143KV18 be used with 1.5 V I/O voltage?
Yes. The device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V operation. HSTL Class I input thresholds and variable-drive output buffers are designed for interoperability with 1.5 V FPGA I/O banks, provided VDDQ is set to 1.5 V and appropriate termination (e.g., 50 Ω to VTT) is applied.
What is the purpose of the ZQ pin and how should it be connected?
ZQ enables on-die output impedance calibration: connecting it to a precision resistor (RQ) to ground sets CQ, CQ, and Q[17:0] output impedance to 0.2 × RQ. Alternatively, tying ZQ to VDDQ activates minimum-impedance mode. It must never be left floating or tied to GND, as that disables calibration and risks signal integrity failure.
CY7C1143KV18-400BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1143KV18-400BZI FAQ
1.How can I place an order for CY7C1143KV18-400BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1143KV18-400BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1143KV18-400BZI reliable?
The price and inventory of CY7C1143KV18-400BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1143KV18-400BZI is usually 5 days.
3.What payment methods are accepted for CY7C1143KV18-400BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1143KV18-400BZI transactions.
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CY7C1143KV18-400BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1143KV18-400BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1143KV18-400BZI?
For technical support, including CY7C1143KV18-400BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1143KV18-400BZI requirements.
6.How does Aetrix verify that CY7C1143KV18-400BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1143KV18-400BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1143KV18-400BZI meets industry standards.
7.What is the process for return or replacement of CY7C1143KV18-400BZI?
All CY7C1143KV18-400BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1143KV18-400BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1143KV18-400BZI part is unused and in its original packaging.
Return procedure for CY7C1143KV18-400BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1143KV18-400BZI Tags

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