Cypress Semiconductor Corp CY7C1143KV18-450BZC

Overview

CY7C1143KV18 from Cypress Semiconductor is a 18-Mbit QDR® II+ SRAM with 1M × 18 organization, 450 MHz clock frequency, 2.0-cycle read latency, and separate read/write DDR ports operating at 900 Mbps effective data rate. It features HSTL I/O, echo clocks (CQ/CQ), QVLD data-valid indicator, and PLL-based timing alignment-designed for high-bandwidth packet buffering in network line cards and telecom switching fabric.

For engineers reviewing the CY7C1143KV18 datasheet, CY7C1143KV18 pinout, CY7C1143KV18 application, or CY7C1143KV18 equivalent, key selection criteria include its 450 MHz operation with 2.0-cycle latency, dual-clock DDR interface, 165-ball FBGA package, 1.8 V core / 1.4–1.8 V I/O supply range, and JTAG 1149.1 compliance for boundary-scan testability.

Technical Context

The CY7C1143KV18 implements a synchronous pipelined QDR II+ architecture with physically independent read and write data paths, eliminating bus turnaround overhead. Its four-word burst transfers 72 bits per read cycle (Q[17:0] × 4) and supports concurrent read/write operations on shared address bus latched by K/K rising edges.

Timing is governed by an internal PLL that aligns output data to echo clocks CQ/CQ, enabling reliable capture at 900 Mbps. The DOFF pin selects between QDR II+ mode (DOFF = HIGH, 2.0-cycle latency, up to 450 MHz) and legacy QDR I mode (DOFF = LOW, 1-cycle latency, ≤167 MHz).

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, the CY7C1143KV18 delivers 35% higher bandwidth and eliminates external timing calibration via integrated PLL and echo clocks-making it optimal for new 10G+ infrastructure where deterministic latency and signal integrity are critical.

Availability

CY7C1143KV18 is available at Aetrix Electronics and suitable for telecom line card buffering, network packet switching fabric, and high-speed test equipment requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for CY7C1143KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with focus on signal integrity and timing-critical applications.

The QDR® II+ SRAM product line targets high-bandwidth, low-latency buffering in packet-switched networks-specifically engineered to replace DRAM and standard SRAM in applications demanding concurrent read/write and deterministic 2-cycle latency.

FAQ

What is the function of the DOFF pin on CY7C1143KV18?

The DOFF pin controls the internal PLL: when pulled HIGH (via 10 kΩ resistor to VDDQ), the device operates in QDR II+ mode with 2.0-cycle read latency and up to 450 MHz clock rate; when pulled LOW to VSS, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and maximum 167 MHz operation. This provides backward compatibility while enabling performance scaling.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external resistor (typically 50 Ω to ground) to calibrate the output driver impedance of Q[x:0], CQ, and CQ pins to 0.2 × RQ (i.e., 10 Ω). This matches standard 50 Ω transmission lines, minimizing reflections and ensuring clean eye diagrams at 900 Mbps-critical for maintaining timing margins in high-speed backplane interfaces.

Can CY7C1143KV18 perform byte-level writes without read-modify-write?

Yes. The device supports true byte-selective writes using BWS0 and BWS1 pins, each controlling nine bits (D[8:0] and D[17:9]). When a BWS signal is deasserted (HIGH), the corresponding byte remains unaltered during the write burst-enabling efficient partial updates of packet headers or control structures without CPU intervention or additional memory cycles.

Is the CY7C1143KV18 JTAG boundary-scan compliant?

Yes. The device implements IEEE Std. 1149.1 (JTAG) with TDI, TDO, TCK, and TMS pins fully functional. It supports instruction register loading, boundary-scan register access, and IDCODE readback-enabling automated PCB test, interconnect verification, and in-system programming of adjacent devices in dense, high-speed memory subsystems.