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Cypress Semiconductor Corp CY7C1145KV18-400BZXI

Part No.:
CY7C1145KV18-400BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1145KV18-400BZXI.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,555

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Product details

Overview

CY7C1145KV18 from Cypress Semiconductor is a 18-Mbit QDR® II+ SRAM with 512K × 36 organization, 2.0-cycle read latency, 400 MHz clock frequency (900 Mbps DDR data rate), and 165-ball FBGA (13 × 15 × 1.4 mm) package. It features separate read/write ports, echo clocks (CQ/CQ), QVLD data-valid indicator, and programmable impedance via ZQ pin - deployed in high-speed network packet buffers and telecom line cards requiring deterministic low-latency memory access.

For engineers reviewing the CY7C1145KV18 datasheet, CY7C1145KV18 pinout, CY7C1145KV18 application, or CY7C1145KV18 equivalent, key selection criteria include its 400 MHz operation with 2.0-cycle read latency, HSTL I/O compatibility (VDDQ = 1.4–1.8 V), JTAG 1149.1 test support, and depth expansion via RPS/WPS port selects - all critical for synchronous burst memory subsystems in FPGA- or ASIC-based infrastructure equipment.

Technical Context

The CY7C1145KV18 implements a true dual-port QDR II+ architecture with independent read and write pipelines, enabling concurrent transactions without bus turnaround. Its four-word burst transfers 144 bits per read/write cycle (36-bit × 4), synchronized to both K and K rising edges, delivering sustained 900 Mbps per port at 400 MHz.

Internal PLL ensures precise data placement relative to echo clocks CQ/CQ, while DOFF pin enables mode switching between QDR II+ (2-cycle latency, up to 400 MHz) and QDR I (1-cycle latency, ≤167 MHz). Byte write select signals BWS[3:0] provide granular 9-bit byte control across the 36-bit data bus.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 organization)
Max Clock Frequency400 MHz - sets maximum sustained bandwidth of 900 Mbps per port (DDR)
Read Latency2.0 clock cycles - fixed pipeline delay from address latch to first valid Q[x] output
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V HSTL systems
Core SupplyVDD = 1.8 V ± 0.1 V - defines internal logic and array operating voltage
Package165-ball FBGA (13 × 15 × 1.4 mm) - surface-mount footprint with thermal and signal integrity optimization
Standards ComplianceJTAG IEEE 1149.1 - enables boundary-scan testing and system-level debug

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputs36-bit parallel data sampled on rising edges of K/K; supports byte-select writes via BWS[3:0]
Q[35:0]Synchronous read data outputs36-bit parallel outputs edge-aligned with CQ/CQ; tristated when RPS is deasserted
RPS / WPSRead/Write Port Select (active LOW)Enables independent port activation; allows depth expansion by stacking multiple devices
BWS[3:0]Byte Write Select (active LOW)Four independent 9-bit write masks - enables partial-word updates without read-modify-write
K / KDifferential input clocksRising edges drive all synchronous operations; K used for address/data capture, K for complementary timing
CQ / CQEcho clocks (outputs)Free-running, phase-aligned copies of K/K - simplify high-speed data capture in FPGA receivers
QVLDData validity indicatorAsserted coincident with valid Q[35:0] - eliminates need for fixed delay-based sampling windows
ZQImpedance calibration inputConnects to external resistor to ground to tune output driver impedance to match PCB trace (0.2 × RQ)
DOFFPLL disable controlLOW disables internal PLL, reverting device to QDR I timing (1-cycle latency, ≤167 MHz)

Key Features

FeatureDesign Value
Four-word burst architectureTransfers 144 bits per access (36-bit × 4) in two clock cycles - reduces address bus toggling and controller overhead
Separate read/write data pathsEliminates data bus turnaround and contention - enables true concurrent read/write without arbitration logic
HSTL-compatible I/O with variable driveSupports 1.4–1.8 V VDDQ and programmable output strength - matches modern FPGA I/O standards and minimizes signal integrity risk
Integrated PLL with echo clocksDelivers deterministic, low-jitter CQ/CQ outputs aligned to K/K - removes need for external clock forwarding circuitry
QVLD data-valid strobeEdge-aligned with output data - enables reliable capture in high-speed receivers without fixed setup/hold margin assumptions

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches and routers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly to MAC/FPGA fabric with deterministic 2-cycle read response.

Use Value: Concurrent read/write avoids head-of-line blocking; 900 Mbps per port sustains full-duplex 10Gbps link aggregation without bottleneck.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards handling TDM and ATM cell traffic.

IC Role / Device Role / Timing Role: Synchronous burst memory supporting time-slot interchange (TSI) and statistical multiplexing engines with strict jitter tolerance.

Use Value: Echo clocks (CQ/CQ) and QVLD enable sub-nanosecond timing alignment required for <100 ps jitter budgets in telecom PHY layers.

FPGA-Based Protocol AccelerationHigh-Speed Test Equipment Memory

Use Scenario: Offloading TCP/IP, TLS, or video encoding state tables and working buffers from host CPU to FPGA-accelerated datapath.

IC Role / Device Role / Timing Role: Dedicated SRAM resource mapped into FPGA AXI/PCIe address space, accessed via custom HDL controllers with burst-aware arbitration.

Use Value: Independent RPS/WPS allows pipelined command execution; byte write enables efficient metadata update without full-word overwrite.

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) for semiconductor validation.

IC Role / Device Role / Timing Role: High-fidelity digital acquisition memory synchronized to precision clock generators and digitizer ADCs/DACs.

Use Value: 400 MHz operation with 2-cycle latency meets sub-2.5 ns timing resolution requirements; JTAG support enables in-system verification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36120512K × 36 QDR II SRAM, 333 MHz max, no integrated PLL, requires external echo clock generationLacks QVLD and ZQ calibration; lower max frequency limits bandwidth in 10G+ systemsSelect when legacy QDR II compatibility or cost sensitivity outweighs need for 400 MHz and on-die PLL simplification
ISSI IS61WV102436B1M × 36 sync SRAM, 167 MHz, single-port, no burst mode, no echo clocks or QVLDNon-burst, single-port architecture increases controller complexity and reduces throughput by ~60% vs. QDR II+Choose only for non-concurrent, latency-tolerant applications where cost and simplicity dominate over bandwidth

Compared with IDT72T36120 and IS61WV102436B, CY7C1145KV18 delivers 20% higher bandwidth, eliminates external clock forwarding components via integrated PLL and echo clocks, and provides deterministic data validity with QVLD - reducing FPGA logic utilization and timing closure effort in high-end infrastructure designs.

Availability

CY7C1145KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA-based protocol acceleration, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1145KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was designed specifically for deterministic, high-bandwidth memory subsystems in networking and telecom infrastructure - emphasizing concurrent access, low-latency predictability, and signal integrity at multi-Gbps rates.

FAQ

What is the function of the DOFF pin on CY7C1145KV18?

The DOFF (PLL Turn Off) pin controls internal PLL operation: when pulled HIGH, the device operates in QDR II+ mode with 2.0-cycle read latency and up to 400 MHz clock rate; when pulled LOW, the PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and a maximum frequency of 167 MHz. This pin must be externally biased - typically via a 10 kΩ pull-up resistor for normal operation.

How does the ZQ pin affect output driver impedance?

The ZQ pin connects to an external resistor (RQ) tied to ground, enabling on-die impedance calibration: output drivers for Q[35:0], CQ, and CQ are tuned to 0.2 × RQ. For example, a 60 Ω RQ yields 12 Ω driver impedance. Alternatively, tying ZQ directly to VDDQ activates minimum-impedance mode. ZQ must never be left floating or connected to GND, as this disables calibration and risks signal integrity failure.

Can CY7C1145KV18 perform partial writes without reading existing data?

Yes - the device supports true partial writes using BWS[3:0] (Byte Write Select) signals. Each BWS bit enables or disables one 9-bit byte within the 36-bit D[35:0] bus. When a BWS line is deasserted (HIGH), the corresponding byte remains unaltered in memory, eliminating the need for read-modify-write sequences. This capability is essential for efficient metadata or header updates in packet processing applications.

What is the role of QVLD in system timing design?

QVLD is an edge-aligned output strobe that asserts coincident with valid data on Q[35:0]. Unlike fixed-delay sampling schemes, QVLD eliminates reliance on worst-case setup/hold margins by providing a dynamic, cycle-accurate indication of data validity. This allows FPGA or ASIC receivers to sample data using QVLD as a capture enable, significantly easing timing closure at 400 MHz and improving robustness against PVT variation.

CY7C1145KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1145KV18-400BZXI FAQ

1.How can I place an order for CY7C1145KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1145KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1145KV18-400BZXI reliable?

The price and inventory of CY7C1145KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1145KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1145KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1145KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1145KV18-400BZXI?

CY7C1145KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1145KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1145KV18-400BZXI?

For technical support, including CY7C1145KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1145KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C1145KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1145KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1145KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1145KV18-400BZXI?

All CY7C1145KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1145KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1145KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C1145KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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