Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Cypress Semiconductor Corp CY7C1150KV18-400BZXI

Part No.:
CY7C1150KV18-400BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1150KV18-400BZXI.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,094

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

CY7C1150KV18-400BZXI from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 512K × 36, operating at 400 MHz with 2.0-cycle read latency, HSTL I/O, and integrated PLL for precise data placement-used in high-bandwidth packet buffering and network switch fabric memory subsystems.

For engineers reviewing the CY7C1150KV18-400BZXI datasheet, CY7C1150KV18-400BZXI pinout, CY7C1150KV18-400BZXI application, or CY7C1150KV18-400BZXI equivalent, key selection criteria include DDR II+ burst timing compliance, echo clock (CQ/CQ) synchronization, QVLD data validity signaling, and 165-ball FBGA mechanical compatibility with high-speed PCB layout constraints.

Technical Context

This device implements a synchronous pipelined architecture with dual input clocks (K/K) driving all address, control, and data registers on rising edges; read data bursts two 36-bit words per access, aligned to both K and K edges, with output timing referenced to echo clocks CQ/CQ.

The internal PLL enables accurate data placement at 400 MHz, while DOFF pin selection determines operation mode: PLL-enabled DDR II+ (2-cycle latency, up to 400 MHz) or PLL-bypassed DDR I (1-cycle latency, ≤167 MHz); VDD = 1.8 V ± 0.1 V and VDDQ = 1.4–1.8 V support mixed-voltage system integration.

Key Specifications

Parameter Value and Actual Design Meaning
Density 18 Mbit (512K × 36), enabling compact high-throughput buffer memory without depth expansion
Max Clock Frequency 400 MHz - defines maximum sustained bandwidth of 28.8 GB/s (36-bit × 400 MHz × 2 words/cycle)
Read Latency 2.0 clock cycles when DOFF = HIGH - ensures deterministic timing for pipeline-constrained switch ASIC interfaces
I/O Voltage VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V logic families in multi-supply systems
Output Drive HSTL Class I compatible with variable drive strength - matches controlled-impedance 50 Ω transmission lines
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and electrical performance suitable for dense routing in telecom modules
Core Supply VDD = 1.8 V ± 0.1 V - requires low-noise regulation for stable SRAM core operation under burst load

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option (BZXI suffix).

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Synchronous bidirectional data bus 36-bit DDR interface; samples input on K/K rising edges, drives output aligned to CQ/CQ; tri-states automatically on deselect
K / K Differential input clocks Rising edges latch all synchronous inputs (A, R/W, LD, BWS[3:0]) and clock output registers; K is true, K is complement
CQ / CQ Output echo clocks Free-running, phase-aligned copies of K/K; simplify system-level data capture without per-device skew compensation
QVLD Valid data indicator Asserted edge-aligned with CQ/CQ to signal valid DQ[35:0] - eliminates need for fixed delay-based data sampling windows
DOFF PLL enable/disable control Active LOW; disables PLL to enter DDR I mode (1-cycle latency, ≤167 MHz) - enables fallback timing for margin-critical designs
ZQ Impedance calibration reference Connects to external 240 Ω resistor to GND to tune CQ/CQ/DQ output impedance to 48 Ω (0.2 × RQ), matching typical PCB trace Z₀

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address sequencing
Integrated PLL with echo clocks Eliminates external clock forwarding ICs and board-level skew tuning - cuts BOM cost and layout complexity in multi-SRAM systems
QVLD data validity signal Removes need for fixed-output-delay assumptions - enables reliable data capture across voltage/temperature corners without margin padding
Programmable output impedance via ZQ Enables dynamic impedance matching to system bus without discrete termination resistors - improves signal integrity at 900 MT/s DDR data rate
Byte write select (BWS[3:0]) Allows partial 36-bit writes without read-modify-write cycles - critical for packet header updates in networking applications

Applications

Network Switch Buffer Memory Telecom Line Card Packet FIFO

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switching ASICs requiring sub-10 ns access predictability.

IC Role / Device Role / Timing Role: High-speed burst-access SRAM acting as first-level packet buffer, synchronized to switch fabric clock domain via K/K and CQ/CQ.

Use Value: 2.0-cycle latency and QVLD eliminate setup/hold uncertainty at 400 MHz, enabling deterministic 10 Gbps+ line-rate processing.

Use Scenario: Temporary storage of variable-length ATM or Ethernet frames in carrier-grade DSLAM or OLT line cards.

IC Role / Device Role / Timing Role: Depth-expanded DDR II+ SRAM bank providing 72-bit effective width (two CY7C1150KV18 devices) with echo-clock-aligned outputs.

Use Value: Burst architecture halves address bus frequency vs. conventional SRAM, reducing routing congestion on space-constrained line card PCBs.

High-Speed Test Equipment Memory Industrial Real-Time Controller Cache

Use Scenario: Capturing high-fidelity waveform samples from multi-GHz ADCs in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: Low-latency, deterministic memory staging buffer interfacing directly to FPGA-based pattern sequencers using HSTL I/O.

Use Value: 1.4–1.8 V VDDQ range allows direct connection to FPGA banks without level shifters, reducing signal path delay and jitter.

Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in CNC machine controllers requiring guaranteed worst-case access time.

IC Role / Device Role / Timing Role: Synchronous SRAM serving as deterministic instruction/data cache for real-time microcontroller or DSP subsystems.

Use Value: DOFF pin enables fallback to 1-cycle DDR I mode during voltage droop events - maintains functional safety without system reset.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256B-15JCIN Asynchronous 256K × 16 SRAM, 15 ns access, no DDR interface or PLL Lacks burst, echo clocks, and QVLD - requires external timing control and adds 3–5 ns latency uncertainty Select only for legacy designs where DDR timing complexity must be avoided and bandwidth < 1.2 GB/s suffices
IS61WV102432BLL-15BLI Synchronous 1M × 32 SRAM, 150 MHz max, single-data-rate, no echo clocks No DDR data rate doubling; lacks CQ/CQ and QVLD - forces use of FPGA IDELAY/ODELAY for timing closure Prefer when system clock < 200 MHz and design team lacks DDR timing expertise but needs synchronous control

Compared with AS7C3256B-15JCIN and IS61WV102432BLL-15BLI, CY7C1150KV18-400BZXI delivers 19× higher peak bandwidth (28.8 vs. 1.5 GB/s) and eliminates board-level timing tuning via integrated echo clocks and QVLD - essential for 10G+ systems.

Availability

CY7C1150KV18-400BZXI is available at Aetrix Electronics and suitable for network switch buffer memory, telecom line card packet FIFO, and high-speed test equipment memory requiring stable component supply across extended production lifecycles.

Supply support for CY7C1150KV18-400BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

CY7C1150KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched infrastructure and real-time control systems.

FAQ

What is the function of the DOFF pin on CY7C1150KV18-400BZXI?

The DOFF pin controls PLL operation: when asserted HIGH, the PLL is active and the device operates in DDR II+ mode with 2.0-cycle read latency at up to 400 MHz; when pulled LOW, the PLL is disabled and the device reverts to DDR I timing with 1-cycle latency and a maximum frequency of 167 MHz. This provides a hardware-selectable timing mode for design margining or fallback operation.

How does the ZQ pin affect output impedance calibration?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of CQ, CQ, and DQ[35:0] output drivers to 48 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances without discrete terminators. If ZQ is tied directly to VDDQ, minimum output impedance mode is activated - useful for short-trace or point-to-point configurations.

Can CY7C1150KV18-400BZXI operate with VDDQ = 1.5 V?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V. At 1.5 V, HSTL Class I output drive strength is maintained, and AC timing parameters remain within specification per the datasheet's "1.5 V I/O Supply" column. No configuration change is required beyond setting VDDQ supply accordingly.

What is the purpose of the QVLD signal in system-level timing?

QVLD is a synchronous output that asserts edge-aligned with CQ and CQ to indicate when DQ[35:0] data is valid. It replaces fixed-delay sampling windows with a dynamic, clock-aligned validity flag - enabling robust data capture across voltage, temperature, and process variations without timing margin padding in FPGA or ASIC receivers.

CY7C1150KV18-400BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1150KV18-400BZXI FAQ

1.How can I place an order for CY7C1150KV18-400BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1150KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1150KV18-400BZXI reliable?

The price and inventory of CY7C1150KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1150KV18-400BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1150KV18-400BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1150KV18-400BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1150KV18-400BZXI?

CY7C1150KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1150KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1150KV18-400BZXI?

For technical support, including CY7C1150KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1150KV18-400BZXI requirements.

6.How does Aetrix verify that CY7C1150KV18-400BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1150KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1150KV18-400BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1150KV18-400BZXI?

All CY7C1150KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1150KV18-400BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1150KV18-400BZXI part is unused and in its original packaging.

Return procedure for CY7C1150KV18-400BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1150KV18-400BZXI Tags

  • CY7C1150KV18-400BZXI
  • CY7C1150KV18-400BZXI PDF
  • CY7C1150KV18-400BZXI Datasheet
  • CY7C1150KV18-400BZXI Specifications
  • CY7C1150KV18-400BZXI Images
  • Cypress Semiconductor Corp
  • Cypress Semiconductor Corp CY7C1150KV18-400BZXI
  • Buy CY7C1150KV18-400BZXI
  • CY7C1150KV18-400BZXI Price
  • CY7C1150KV18-400BZXI Distributor
  • CY7C1150KV18-400BZXI Supplier
  • CY7C1150KV18-400BZXI Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER