Cypress Semiconductor Corp CY7C1150KV18-400BZXI
- Part No.:
- CY7C1150KV18-400BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1150KV18-400BZXI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1150KV18-400BZXI from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 512K × 36, operating at 400 MHz with 2.0-cycle read latency, HSTL I/O, and integrated PLL for precise data placement-used in high-bandwidth packet buffering and network switch fabric memory subsystems.
For engineers reviewing the CY7C1150KV18-400BZXI datasheet, CY7C1150KV18-400BZXI pinout, CY7C1150KV18-400BZXI application, or CY7C1150KV18-400BZXI equivalent, key selection criteria include DDR II+ burst timing compliance, echo clock (CQ/CQ) synchronization, QVLD data validity signaling, and 165-ball FBGA mechanical compatibility with high-speed PCB layout constraints.
Technical Context
This device implements a synchronous pipelined architecture with dual input clocks (K/K) driving all address, control, and data registers on rising edges; read data bursts two 36-bit words per access, aligned to both K and K edges, with output timing referenced to echo clocks CQ/CQ.
The internal PLL enables accurate data placement at 400 MHz, while DOFF pin selection determines operation mode: PLL-enabled DDR II+ (2-cycle latency, up to 400 MHz) or PLL-bypassed DDR I (1-cycle latency, ≤167 MHz); VDD = 1.8 V ± 0.1 V and VDDQ = 1.4–1.8 V support mixed-voltage system integration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 18 Mbit (512K × 36), enabling compact high-throughput buffer memory without depth expansion |
| Max Clock Frequency | 400 MHz - defines maximum sustained bandwidth of 28.8 GB/s (36-bit × 400 MHz × 2 words/cycle) |
| Read Latency | 2.0 clock cycles when DOFF = HIGH - ensures deterministic timing for pipeline-constrained switch ASIC interfaces |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V logic families in multi-supply systems |
| Output Drive | HSTL Class I compatible with variable drive strength - matches controlled-impedance 50 Ω transmission lines |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - provides thermal and electrical performance suitable for dense routing in telecom modules |
| Core Supply | VDD = 1.8 V ± 0.1 V - requires low-noise regulation for stable SRAM core operation under burst load |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option (BZXI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR interface; samples input on K/K rising edges, drives output aligned to CQ/CQ; tri-states automatically on deselect |
| K / K | Differential input clocks | Rising edges latch all synchronous inputs (A, R/W, LD, BWS[3:0]) and clock output registers; K is true, K is complement |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K; simplify system-level data capture without per-device skew compensation |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to signal valid DQ[35:0] - eliminates need for fixed delay-based data sampling windows |
| DOFF | PLL enable/disable control | Active LOW; disables PLL to enter DDR I mode (1-cycle latency, ≤167 MHz) - enables fallback timing for margin-critical designs |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to GND to tune CQ/CQ/DQ output impedance to 48 Ω (0.2 × RQ), matching typical PCB trace Z₀ |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs - lowers EMI and simplifies controller address sequencing |
| Integrated PLL with echo clocks | Eliminates external clock forwarding ICs and board-level skew tuning - cuts BOM cost and layout complexity in multi-SRAM systems |
| QVLD data validity signal | Removes need for fixed-output-delay assumptions - enables reliable data capture across voltage/temperature corners without margin padding |
| Programmable output impedance via ZQ | Enables dynamic impedance matching to system bus without discrete termination resistors - improves signal integrity at 900 MT/s DDR data rate |
| Byte write select (BWS[3:0]) | Allows partial 36-bit writes without read-modify-write cycles - critical for packet header updates in networking applications |
Applications
| Network Switch Buffer Memory | Telecom Line Card Packet FIFO |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/L3 switching ASICs requiring sub-10 ns access predictability. IC Role / Device Role / Timing Role: High-speed burst-access SRAM acting as first-level packet buffer, synchronized to switch fabric clock domain via K/K and CQ/CQ. Use Value: 2.0-cycle latency and QVLD eliminate setup/hold uncertainty at 400 MHz, enabling deterministic 10 Gbps+ line-rate processing. |
Use Scenario: Temporary storage of variable-length ATM or Ethernet frames in carrier-grade DSLAM or OLT line cards. IC Role / Device Role / Timing Role: Depth-expanded DDR II+ SRAM bank providing 72-bit effective width (two CY7C1150KV18 devices) with echo-clock-aligned outputs. Use Value: Burst architecture halves address bus frequency vs. conventional SRAM, reducing routing congestion on space-constrained line card PCBs. |
| High-Speed Test Equipment Memory | Industrial Real-Time Controller Cache |
|
Use Scenario: Capturing high-fidelity waveform samples from multi-GHz ADCs in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Low-latency, deterministic memory staging buffer interfacing directly to FPGA-based pattern sequencers using HSTL I/O. Use Value: 1.4–1.8 V VDDQ range allows direct connection to FPGA banks without level shifters, reducing signal path delay and jitter. |
Use Scenario: Storing motion control trajectory tables and sensor fusion buffers in CNC machine controllers requiring guaranteed worst-case access time. IC Role / Device Role / Timing Role: Synchronous SRAM serving as deterministic instruction/data cache for real-time microcontroller or DSP subsystems. Use Value: DOFF pin enables fallback to 1-cycle DDR I mode during voltage droop events - maintains functional safety without system reset. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-15JCIN | Asynchronous 256K × 16 SRAM, 15 ns access, no DDR interface or PLL | Lacks burst, echo clocks, and QVLD - requires external timing control and adds 3–5 ns latency uncertainty | Select only for legacy designs where DDR timing complexity must be avoided and bandwidth < 1.2 GB/s suffices |
| IS61WV102432BLL-15BLI | Synchronous 1M × 32 SRAM, 150 MHz max, single-data-rate, no echo clocks | No DDR data rate doubling; lacks CQ/CQ and QVLD - forces use of FPGA IDELAY/ODELAY for timing closure | Prefer when system clock < 200 MHz and design team lacks DDR timing expertise but needs synchronous control |
Compared with AS7C3256B-15JCIN and IS61WV102432BLL-15BLI, CY7C1150KV18-400BZXI delivers 19× higher peak bandwidth (28.8 vs. 1.5 GB/s) and eliminates board-level timing tuning via integrated echo clocks and QVLD - essential for 10G+ systems.
Availability
CY7C1150KV18-400BZXI is available at Aetrix Electronics and suitable for network switch buffer memory, telecom line card packet FIFO, and high-speed test equipment memory requiring stable component supply across extended production lifecycles.
Supply support for CY7C1150KV18-400BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
CY7C1150KV18 belongs to the QDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched infrastructure and real-time control systems.
FAQ
What is the function of the DOFF pin on CY7C1150KV18-400BZXI?
The DOFF pin controls PLL operation: when asserted HIGH, the PLL is active and the device operates in DDR II+ mode with 2.0-cycle read latency at up to 400 MHz; when pulled LOW, the PLL is disabled and the device reverts to DDR I timing with 1-cycle latency and a maximum frequency of 167 MHz. This provides a hardware-selectable timing mode for design margining or fallback operation.
How does the ZQ pin affect output impedance calibration?
The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die calibration of CQ, CQ, and DQ[35:0] output drivers to 48 Ω (0.2 × 240 Ω). This matches standard PCB trace impedances without discrete terminators. If ZQ is tied directly to VDDQ, minimum output impedance mode is activated - useful for short-trace or point-to-point configurations.
Can CY7C1150KV18-400BZXI operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, explicitly including 1.5 V. At 1.5 V, HSTL Class I output drive strength is maintained, and AC timing parameters remain within specification per the datasheet's "1.5 V I/O Supply" column. No configuration change is required beyond setting VDDQ supply accordingly.
What is the purpose of the QVLD signal in system-level timing?
QVLD is a synchronous output that asserts edge-aligned with CQ and CQ to indicate when DQ[35:0] data is valid. It replaces fixed-delay sampling windows with a dynamic, clock-aligned validity flag - enabling robust data capture across voltage, temperature, and process variations without timing margin padding in FPGA or ASIC receivers.
CY7C1150KV18-400BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1150KV18-400BZXI FAQ
1.How can I place an order for CY7C1150KV18-400BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1150KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1150KV18-400BZXI reliable?
The price and inventory of CY7C1150KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1150KV18-400BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1150KV18-400BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1150KV18-400BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1150KV18-400BZXI?
CY7C1150KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1150KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1150KV18-400BZXI?
For technical support, including CY7C1150KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1150KV18-400BZXI requirements.
6.How does Aetrix verify that CY7C1150KV18-400BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1150KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1150KV18-400BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1150KV18-400BZXI?
All CY7C1150KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1150KV18-400BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1150KV18-400BZXI part is unused and in its original packaging.
Return procedure for CY7C1150KV18-400BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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