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Cypress Semiconductor Corp CY7C1163KV18-400BZI

Part No.:
CY7C1163KV18-400BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1163KV18-400BZI.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
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Inventory:4,297

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Product details

Overview

CY7C1163KV18 from Cypress Semiconductor is a 1.8 V, 18-Mbit QDR® II+ SRAM with 1M × 18 organization, 400 MHz maximum clock frequency, 2.5-cycle read latency, and separate synchronous read/write ports supporting concurrent DDR transfers at 800 Mbps per port. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1163KV18 datasheet, CY7C1163KV18 pinout, CY7C1163KV18 application, or CY7C1163KV18 equivalent, key selection criteria include its 165-ball FBGA package, HSTL I/O compatibility, DOFF-configurable latency mode (QDR I vs. QDR II+), echo-clock–assisted timing closure, and JTAG 1149.1 test access support.

Technical Context

The CY7C1163KV18 implements a true dual-port synchronous architecture with physically independent read and write data paths-no bus turnaround required. Its four-word burst transfers 72 bits per read cycle (Q[17:0] × 4) and supports depth expansion via RPS/WPS controls and byte-write enables BWS0/BWS1.

Timing is governed by two complementary input clocks (K/K) and synchronized echo clocks (CQ/CQ), with all data sampled on rising edges. The integrated PLL enables precise 2.5-cycle read latency when DOFF = HIGH; disabling the PLL (DOFF = LOW) reverts operation to QDR I mode with 1-cycle latency up to 167 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (1M × 18 configuration)
Max Clock Frequency 400 MHz - sets maximum sustained bandwidth of 800 MB/s per port
Read Latency 2.5 cycles (DOFF = HIGH) - enables deterministic timing for pipeline-aligned systems
I/O Voltage VDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V HSTL-15/18 interfaces
Core Supply VDD = 1.8 V ± 0.1 V - defines stable low-power SRAM core operation
Package 165-ball FBGA (13 × 15 × 1.4 mm) - provides high-pin-count, thermally efficient layout for high-speed routing
Standby Current Typical 45 mA at 400 MHz - measured under active burst conditions, not deep sleep

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edge of K/K; drives 18-bit parallel data into memory array during write cycles
Q[17:0] Synchronous read data outputs Drives bursted 4×18-bit data on rising edges of K/K; tristated when RPS inactive
RPS, WPS Port select controls Active-low enables independent read/write port activation; enables depth expansion without external logic
BWS0, BWS1 Byte write selects Independent 9-bit segment enables (BWS0 → D[8:0], BWS1 → D[17:9]); preserves unselected bytes during partial writes
K, K Dual-phase input clocks Provide precise DDR timing reference; all synchronous inputs latched on rising edges only
CQ, CQ Echo clock outputs Free-running, phase-aligned copies of K/K; simplify high-speed data capture at receiver end
QVLD Data validity indicator Asserted coincident with valid Q[17:0] output; edge-aligned to CQ/CQ for reliable strobing
DOFF PLL enable/disable control HIGH = QDR II+ mode (2.5-cycle latency); LOW = QDR I mode (1-cycle latency, ≤167 MHz)
ZQ Output impedance calibration Connects to external 240 Ω resistor to ground to tune CQ/Q[17:0] drive strength to 48 Ω (0.2 × RQ)

Key Features

Feature Design Value
Separate read/write ports Eliminates data bus turnaround overhead and contention risk in full-duplex streaming applications
Four-word burst architecture Reduces address bus switching rate by 4× versus single-word access - lowers EMI and routing complexity
HSTL-compatible I/O Supports 1.5 V and 1.8 V signaling with programmable drive strength - interoperable with FPGA transceivers
JTAG 1149.1 test access Enables boundary scan testing and in-system programming without dedicated debug headers
Configurable latency mode Hardware-selectable QDR I (1-cycle) or QDR II+ (2.5-cycle) behavior via DOFF pin - simplifies migration path

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2/L3 switches with zero-latency read-after-write requirements.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic buffer between ingress parser and egress scheduler; QDR II+ burst mode matches packet payload alignment.

Use Value: Concurrent read/write eliminates arbitration delay; 2.5-cycle latency ensures deterministic frame handoff timing across 400 MHz system clock domain.

Use Scenario: Capturing real-time waveform samples from multi-GHz ADCs in automated test equipment (ATE) with tight jitter budgets.

IC Role / Device Role / Timing Role: High-bandwidth acquisition memory staging raw digitized data before compression or analysis; echo clocks synchronize capture latch timing.

Use Value: CQ/CQ outputs provide sub-100 ps skew-referenced strobes; 800 MB/s sustained throughput meets >1 GS/s sampling with 8-bit resolution.

Baseband Signal Processing FPGA Co-Processor Cache

Use Scenario: Interfacing between digital front-end (DFE) and channel estimation blocks in LTE/5G baseband ASICs requiring low-jitter memory access.

IC Role / Device Role / Timing Role: Shared-memory scratchpad for FFT/IFFT buffers; separate ports allow simultaneous coefficient load and sample processing.

Use Value: Full data coherency guarantees most recent write appears on next read; HSTL I/O matches FPGA I/O voltage rails without level shifters.

Use Scenario: Off-chip instruction/data cache for soft-core processors (e.g., MicroBlaze) running on Xilinx Ultrascale+ FPGAs in embedded vision systems.

IC Role / Device Role / Timing Role: Low-latency memory extension enabling deterministic execution of real-time image filtering kernels.

Use Value: 2.5-cycle read latency aligns with FPGA pipeline stages; JTAG support enables runtime memory diagnostics and firmware patch injection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 18-Mbit QDR II+, 1000 Mbps DDR, 165-ball FBGA, but requires 1.5 V VDDQ only; no DOFF-configurable latency mode Fixed 2.5-cycle latency; lacks QDR I fallback mode - less flexible for mixed-speed designs Select when strict 1.5 V I/O compliance is required and latency flexibility is unnecessary
ISSI IS61WV102418B 18-Mbit sync SRAM, 150 MHz max, single-port, 3.3 V core/I/O, SOJ-54 package - no DDR, no burst, no echo clocks Not suitable for concurrent access; limited to legacy systems with lower bandwidth needs Choose only for cost-sensitive, non-concurrent, sub-200 MHz applications where QDR features are unused

Compared with IDT72T36120L10BG, CY7C1163KV18 offers configurable latency and wider VDDQ range; compared with IS61WV102418B, it delivers 2.7× higher bandwidth and true dual-port operation essential for modern packet-processing pipelines.

Availability

CY7C1163KV18 is available at Aetrix Electronics and suitable for network infrastructure, test instrumentation, wireless baseband, and FPGA-accelerated embedded systems requiring stable component supply, long-lifecycle support, and guaranteed traceability.

Supply support for CY7C1163KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was designed specifically for high-throughput, low-latency buffering in packet-switched networks and real-time signal processing systems where deterministic timing and concurrent access are critical.

FAQ

What is the function of the DOFF pin on CY7C1163KV18?

The DOFF (PLL Turn Off) pin configures the device's operational mode: when pulled HIGH, the internal PLL is enabled, supporting QDR II+ timing with 2.5-cycle read latency at up to 400 MHz; when pulled LOW, the PLL is disabled and the device operates in QDR I mode with 1-cycle latency and reduced maximum frequency (≤167 MHz). This allows hardware-selectable performance vs. compatibility trade-offs.

How does the ZQ pin affect output drive strength?

The ZQ pin calibrates the output impedance of Q[17:0], CQ, and CQ signals by referencing an external 240 Ω resistor to ground, setting driver strength to 48 Ω (0.2 × RQ). If tied directly to VDDQ, the device enters minimum-impedance mode (~30 Ω). ZQ must never be left floating or connected to GND, as this disables impedance tuning and may cause signal integrity issues.

Can CY7C1163KV18 perform simultaneous read and write operations to the same address?

Yes - the CY7C1163KV18 supports full data coherency: a write to a given address completes before the next read from that same address returns updated data. Internally, the write is self-timed and pipelined, ensuring the most recently written value is always returned on subsequent reads, even during concurrent access - critical for FIFO and ping-pong buffer implementations.

What is the purpose of the BWS0 and BWS1 pins?

BWS0 and BWS1 are active-low byte write select signals controlling independent 9-bit segments of the 18-bit data bus: BWS0 enables D[8:0], BWS1 enables D[17:9]. When asserted, they allow partial writes without disturbing other bytes in the same word - essential for protocol header updates or metadata insertion without full-word overwrites, reducing bus traffic and power consumption.

CY7C1163KV18-400BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1163KV18-400BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1163KV18-400BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1163KV18-400BZI reliable?

The price and inventory of CY7C1163KV18-400BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1163KV18-400BZI is usually 5 days.

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CY7C1163KV18-400BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1163KV18-400BZI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1163KV18-400BZI?

For technical support, including CY7C1163KV18-400BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1163KV18-400BZI requirements.

6.How does Aetrix verify that CY7C1163KV18-400BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1163KV18-400BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1163KV18-400BZI meets industry standards.

7.What is the process for return or replacement of CY7C1163KV18-400BZI?

All CY7C1163KV18-400BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1163KV18-400BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1163KV18-400BZI part is unused and in its original packaging.

Return procedure for CY7C1163KV18-400BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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