Cypress Semiconductor Corp CY7C1165KV18-400BZC

Overview

CY7C1165KV18 from Cypress Semiconductor is a 512K × 36, 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and DDR interfaces on independent read/write ports operating at 400 MHz (200 MHz clock, 400 MT/s per port). It uses 1.8 V core supply (VDD) and 1.4–1.8 V I/O supply (VDDQ), housed in a 165-ball FBGA (13 × 15 × 1.4 mm), and targets high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C1165KV18 datasheet, CY7C1165KV18 pinout, CY7C1165KV18 application, or CY7C1165KV18 equivalent, key selection criteria include its 2.5-cycle read latency mode (DOFF = HIGH), echo clock (CQ/CQ) timing support, HSTL I/O compatibility, byte write select (BWS[3:0]) granularity, and JTAG 1149.1 test access for production validation.

Technical Context

The CY7C1165KV18 implements a synchronous pipelined QDR II+ architecture with physically separate read and write data paths-eliminating bus turnaround and enabling true concurrent read/write operations. Its dual DDR interfaces transfer data on both rising edges of K and K clocks, achieving 400 MT/s effective throughput per port with 512K × 36 organization.

It integrates an internal PLL for precise data placement relative to echo clocks CQ/CQ, supports programmable output impedance via ZQ pin (0.2×RQ matching), and provides QVLD to indicate valid output data edge-aligned with echo clocks-critical for reliable capture in high-speed SerDes-adjacent systems.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102432BLL-10BLI, the CY7C1165KV18 uniquely delivers 400 MT/s DDR throughput with 2.5-cycle latency, echo-clock–assisted timing, and 1.8 V core operation - making it the only viable option for new 10G+ packet-processing designs requiring deterministic dual-port behavior.

Availability

CY7C1165KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed interconnect buffering, and telecom line card memory requiring stable component supply and long-term industrial lifecycle support.

Supply support for CY7C1165KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II+ SRAM product line was designed specifically for high-throughput, low-latency buffering in networking and telecommunications infrastructure - emphasizing deterministic timing, concurrent access, and signal integrity at multi-Gbps rates.

FAQ

What is the function of the DOFF pin on CY7C1165KV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal phase-locked loop. When pulled LOW, the device reverts to QDR I timing mode with 1-cycle read latency and maximum 167 MHz clock rate. For normal QDR II+ operation at 400 MHz with 2.5-cycle latency, DOFF must be tied HIGH via ≤10 kΩ pull-up to VDDQ.

How does the ZQ pin affect signal integrity?

The ZQ pin connects to an external resistor to ground (typically 50 Ω or 60 Ω) to calibrate the output driver impedance of Q[35:0], CQ, and CQ pins to 0.2×RQ. This matches the SRAM's output impedance to the PCB trace impedance, minimizing reflections and preserving signal eye opening at 400 MT/s - critical for reliable operation without external series termination.

Can CY7C1165KV18 perform partial writes without corrupting adjacent data?

Yes. The device supports byte-selectable writes using BWS[3:0] inputs. Each BWS signal controls a 9-bit lane (e.g., BWS0 → D[8:0]). When a BWS bit is deasserted (HIGH), the corresponding byte remains unaltered during the write cycle - enabling safe in-place updates of specific fields within a 36-bit word without read-modify-write overhead.

Is the CY7C1165KV18 compatible with FPGA memory controllers supporting QDR II+?

Yes. The device complies fully with the QDR II+ specification, including echo clock (CQ/CQ) timing, QVLD signaling, and 2.5-cycle latency mode. Major FPGA vendors (Xilinx, Intel) provide verified IP cores for CY7C1165KV18 interfacing - confirmed by reference designs in Xilinx UG586 and Intel AN-724, supporting 400 MT/s operation with proper PCB layout guidelines.