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Cypress Semiconductor Corp CY7C1165KV18-550BZC

Part No.:
CY7C1165KV18-550BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1165KV18-550BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,757

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Product details

Overview

CY7C1165KV18 from Cypress Semiconductor is a 512K × 36, 18-Mbit QDR® II+ SRAM with separate read/write ports, 550 MHz clock operation (1100 MT/s DDR), 2.5-cycle read latency, and HSTL I/O supporting 1.4–1.8 V VDDQ. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1165KV18 datasheet, CY7C1165KV18 pinout, CY7C1165KV18 application, or CY7C1165KV18 equivalent, key selection criteria include burst depth (4-word), DOFF-controlled latency mode (QDR I vs. QDR II+), byte write select granularity (BWS0–BWS3), echo clock timing (CQ/CQ), and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

The CY7C1165KV18 implements a synchronous pipelined QDR II+ architecture with independent read and write ports sharing a multiplexed 17-bit address bus. Read and write operations are initiated on rising edges of complementary K/K clocks, enabling concurrent access without bus turnaround.

It integrates an internal PLL for precise data placement and uses echo clocks (CQ/CQ) aligned to K/K to simplify high-speed data capture. The DOFF pin selects between 2.5-cycle QDR II+ mode (DOFF = HIGH) and 1-cycle QDR I mode (DOFF = LOW), with corresponding maximum frequency limits (550 MHz vs. 167 MHz).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36 organization)
Maximum Clock Frequency550 MHz - enables 1100 MT/s data rate via DDR interfaces on both ports
Read Latency2.5 clock cycles - fixed when DOFF = HIGH; reduces timing margin pressure in high-speed systems
I/O Voltage RangeVDDQ = 1.4 V to 1.8 V - supports interoperability with 1.5 V and 1.8 V logic families
Burst LengthFour 36-bit words per access - lowers effective address bus frequency by 4× versus single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - optimized for controlled-impedance routing and thermal dissipation in dense backplanes
Input/Output StandardHSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at >500 MHz with matched termination

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write data input bus36-bit synchronous input sampled on rising edges of K/K; supports full or byte-selectable writes via BWS[3:0]
Q[35:0]Read data output bus36-bit synchronous output driven on rising edges of K/K; tristated automatically when RPS is deasserted
RPSRead port selectActive-low synchronous control sampled on K rising edge; initiates 4-word burst read sequence
WPSWrite port selectActive-low synchronous control sampled on K rising edge; enables write transaction and latches D[35:0]
BWS[3:0]Byte write selectFour active-low signals controlling 9-bit byte lanes; allows partial-word updates without read-modify-write overhead
K / KDifferential clock inputsComplementary clocks driving all synchronous registers; only rising edges used for sampling and output timing
CQ / CQEcho clock outputsFree-running, phase-aligned copies of K/K; used by external logic to latch Q[35:0] with minimal skew
QVLDData validity indicatorOutput pulse edge-aligned with CQ/CQ; signals when Q[35:0] carries valid burst data (not idle or transitional)
DOFFPLL disable controlActive-low pin selecting QDR II+ (DOFF = HIGH) or QDR I (DOFF = LOW) timing modes and frequency limits
ZQImpedance calibration referenceConnects to external 240 Ω resistor to ground; tunes CQ/CQ/Q[35:0] output drive strength to match 50 Ω system trace impedance

Key Features

FeatureDesign Value
Independent read/write portsEliminates data bus turnaround delay and contention, enabling true concurrent memory access in full-duplex systems
Four-word burst architectureReduces required address transition rate by 75%, easing timing closure on wide, high-frequency buses
2.5-cycle read latency (QDR II+ mode)Provides predictable, low-latency response for real-time packet buffering while maintaining 550 MHz throughput
HSTL I/O with programmable driveEnsures clean signal edges and robust noise margin at 1100 MT/s, with ZQ-based impedance matching for consistent SI
JTAG 1149.1 boundary scanEnables production-level interconnect testing and debug visibility without requiring additional test pads or probes

Applications

Network Packet BufferingHigh-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, non-blocking FIFO buffer with simultaneous frame write (from MAC) and read (to fabric).

Use Value: 512K × 36 capacity and 1100 MT/s bandwidth support line-rate 10Gbps+ switching with sub-10 ns read latency.

Use Scenario: Capturing high-resolution waveform samples during automated test of RF ICs or high-speed ADCs.

IC Role / Device Role / Timing Role: High-throughput acquisition memory interfacing directly to digitizer ASICs using source-synchronous DDR timing.

Use Value: Echo clocks (CQ/CQ) and QVLD enable reliable capture of 550 MHz sample streams without complex deskew circuitry.

Telecom Line Card Control PlaneReal-Time Signal Processing Buffer

Use Scenario: Holding configuration tables, routing entries, and statistics counters in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Low-latency shared memory between control processor (ARM/RISC) and traffic management ASIC over parallel bus.

Use Value: Separate RPS/WPS and BWS[3:0] allow atomic updates to table entries without stalling concurrent read access for lookup operations.

Use Scenario: Interfacing between DSP cores and hardware accelerators in radar or 5G baseband processing units.

IC Role / Device Role / Timing Role: Synchronous ping-pong buffer staging processed data blocks between pipeline stages with deterministic timing.

Use Value: 2.5-cycle latency and burst transfers minimize stall cycles in tightly coupled multi-core architectures running real-time FFT or filter kernels.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T36150512K × 36 QDR II+, 500 MHz max, no DOFF pin - fixed 2.5-cycle latency onlyLacks QDR I fallback mode; requires stricter clock stability and tighter board layout for 500 MHz operationSelect when absolute maximum bandwidth is required and system clock design fully supports 500 MHz QDR II+ timing
ISSI IS61WV102436B1M × 36 sync SRAM, 200 MHz, single-port, no echo clocks or burst modeLower bandwidth, higher latency, simpler interface - suitable for cost-sensitive control-plane buffers where concurrency is not criticalSelect when system bandwidth demand is ≤400 MT/s and JTAG debug or advanced timing features are unnecessary

Compared with IDT72T36150 and IS61WV102436B, the CY7C1165KV18 uniquely offers configurable latency (via DOFF), integrated echo clocks for simplified capture, and guaranteed 550 MHz operation - making it optimal for next-generation telecom and test equipment demanding both flexibility and peak performance.

Availability

CY7C1165KV18 is available at Aetrix Electronics and suitable for network packet buffering, high-speed test equipment memory, telecom line card control plane, and real-time signal processing buffer applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1165KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR® II+ SRAM product line targets high-throughput, low-latency data buffering in infrastructure equipment where deterministic timing, concurrent access, and DDR bandwidth are essential - especially in packet-forwarding engines and instrumentation front-ends.

FAQ

What is the function of the DOFF pin on CY7C1165KV18?

The DOFF (PLL Turn Off) pin selects between two operational modes: when pulled HIGH, the device operates in QDR II+ mode with 2.5-cycle read latency and up to 550 MHz clock speed; when pulled LOW, the internal PLL is disabled and the device reverts to QDR I timing with 1-cycle latency and a maximum frequency of 167 MHz. This provides design flexibility for timing-critical vs. power-constrained use cases.

How does the ZQ pin affect signal integrity in high-speed designs?

The ZQ pin connects to an external 240 Ω resistor to ground and calibrates the output driver impedance of Q[35:0], CQ, and CQ pins to approximately 50 Ω (0.2 × RQ). This matching minimizes reflections and improves eye diagram margins on controlled-impedance PCB traces, directly enhancing setup/hold timing margins at 1100 MT/s data rates.

Can CY7C1165KV18 perform partial writes without reading existing data first?

Yes. The device supports true byte-selectable writes using BWS[3:0] signals. Each BWS line controls a 9-bit byte lane (D[8:0], D[17:9], D[26:18], D[35:27]), allowing any subset of the 36-bit word to be updated independently. Unselected bytes retain their prior values, eliminating the need for read-modify-write sequences and reducing bus occupancy.

What role do CQ and CQ play in system timing closure?

CQ and CQ are free-running echo clocks synchronized to K and K, respectively, and edge-aligned with valid Q[35:0] data. They provide a dedicated, low-skew timing reference for external FPGA or ASIC receivers to capture output data, removing dependency on board-level clock-to-data skew compensation and simplifying timing analysis in >500 MHz systems.

CY7C1165KV18-550BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
550 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1165KV18-550BZC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1165KV18-550BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1165KV18-550BZC reliable?

The price and inventory of CY7C1165KV18-550BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1165KV18-550BZC is usually 5 days.

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CY7C1165KV18-550BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1165KV18-550BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1165KV18-550BZC?

For technical support, including CY7C1165KV18-550BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1165KV18-550BZC requirements.

6.How does Aetrix verify that CY7C1165KV18-550BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1165KV18-550BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1165KV18-550BZC meets industry standards.

7.What is the process for return or replacement of CY7C1165KV18-550BZC?

All CY7C1165KV18-550BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1165KV18-550BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1165KV18-550BZC part is unused and in its original packaging.

Return procedure for CY7C1165KV18-550BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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