Cypress Semiconductor Corp CY7C1165KV18-550BZXC

Overview

CY7C1165KV18-550BZXC from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II+ SRAM with four-word burst architecture, 2.5-cycle read latency, and 550 MHz clock operation delivering 1100 MT/s DDR data rate on both read and write ports. It features separate synchronous read/write ports, HSTL I/O, 1.8 V core supply (VDD), and 1.4–1.8 V I/O supply (VDDQ), deployed in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C1165KV18-550BZXC datasheet, CY7C1165KV18-550BZXC pinout, CY7C1165KV18-550BZXC application, or CY7C1165KV18-550BZXC equivalent, key selection criteria include confirmed 2.5-cycle latency mode, echo clock (CQ/CQ) timing alignment, QVLD validity signaling, byte-write select granularity (BWS[3:0]), and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II+ SRAM implements dual independent DDR interfaces-read and write-each synchronized to complementary K/K clocks, enabling concurrent access without bus turnaround. Its internal PLL ensures precise data placement relative to echo clocks CQ/CQ, while DOFF pin control selects between 2.5-cycle (PLL enabled) and 1-cycle (PLL disabled, QDR I mode) read latency.

The device uses a single multiplexed 17-bit address bus latched on alternating K/K edges, supports depth expansion via RPS/WPS port enables, and provides full data coherency through synchronous self-timed writes with byte-level granularity via BWS[3:0]. All I/Os comply with HSTL Class I specifications with programmable output drive strength via ZQ impedance calibration.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth burst SRAM applications.

Compared with IDT72T3615L5PF and IS61WV102436B, CY7C1165KV18-550BZXC delivers 10% higher clock rate, deterministic echo-clock–based capture, and guaranteed data coherency-critical for real-time telecom and test equipment requiring sub-nanosecond timing predictability.

Availability

CY7C1165KV18-550BZXC is available at Aetrix Electronics and suitable for high-speed network packet buffers, FPGA-based accelerator memory, telecom baseband processing, and test equipment waveform memory requiring stable component supply and long-term production continuity.

Supply support for CY7C1165KV18-550BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with emphasis on reliability and signal integrity.

CY7C1165KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for applications demanding simultaneous high-bandwidth read/write access with deterministic low-latency timing in networking and signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1165KV18-550BZXC?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal phase-locked loop. When pulled LOW, the device operates in QDR I mode with 1-cycle read latency and reduced maximum frequency (≤167 MHz). When held HIGH (typically via 10 kΩ pull-up), the PLL remains active, enabling full 550 MHz operation with 2.5-cycle latency and echo clock generation. This pin must not be left floating.

How does the ZQ pin affect output drive strength?

The ZQ pin connects to an external precision resistor (RQ) tied to ground, allowing the device to calibrate its HSTL output drivers to match the system's data bus impedance. The calibrated output impedance equals 0.2 × RQ for Q[35:0], CQ, and CQ pins. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (≈20 Ω), suitable for short traces; it must never be left unconnected or grounded.

Can CY7C1165KV18-550BZXC support partial writes without corrupting adjacent bytes?

Yes. The device supports byte-level write masking using BWS[3:0], each controlling a 9-bit lane (D[8:0], D[17:9], D[26:18], D[35:27]). When a BWS signal is deasserted (HIGH), the corresponding byte remains unaltered during the write cycle. This enables safe partial updates-for example, modifying only header fields in a 36-bit packet descriptor-without requiring read-modify-write sequences.

What timing relationship exists between QVLD and CQ/CQ?

QVLD is edge-aligned with both CQ and CQ echo clocks: its rising edge coincides with the rising edge of CQ, and its falling edge aligns with the rising edge of CQ. This creates a precise, jitter-free validity window spanning one full echo clock period, directly indicating when Q[35:0] carries valid data from the current four-word burst-enabling robust source-synchronous capture in FPGA or ASIC receivers.