Cypress Semiconductor Corp CY7C1168KV18-550BZXC

Overview

CY7C1168KV18 from Cypress Semiconductor is a 18-Mbit (1M × 18) synchronous DDR II+ SRAM with two-word burst architecture, 2.5-cycle read latency at 550 MHz, HSTL I/O interface, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and is used in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.

For engineers reviewing the CY7C1168KV18 datasheet, CY7C1168KV18 pinout, CY7C1168KV18 application, or CY7C1168KV18 equivalent, key selection criteria include DDR II+ timing compliance, echo clock (CQ/CQ) synchronization capability, QVLD data validity signaling, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This SRAM implements a pipelined synchronous architecture where address and control inputs (A, R/W, LD, BWS) are registered on the rising edge of K, while write data is latched on both K and K edges. Read data is driven on both K and K edges with 2.5-cycle latency when DOFF = HIGH, enabling deterministic timing in multi-device depth-expanded configurations.

The device integrates an internal PLL to align output data with echo clocks CQ/CQ, supports byte-selectable writes via BWS[1:0], and uses ZQ impedance calibration to match system bus termination. Its dual-clock DDR interface eliminates external strobes and simplifies capture in 1100 MT/s systems without requiring source-synchronous routing per signal.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AB footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256B-15JIN and IS61WV102418BLL-10BLI, CY7C1168KV18 delivers 2× data rate via DDR, eliminates external timing margining with QVLD/CQ, and enables scalable depth expansion without wait states - critical for 10 GbE and FPGA-accelerated systems.

Availability

CY7C1168KV18 is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for CY7C1168KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets, with focus on signal integrity and timing-critical applications.

CY7C1168KV18 belongs to the QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in FPGA-based and ASIC-based networking and signal processing systems.

FAQ

What is the function of the DOFF pin?

The DOFF pin controls internal PLL operation: when asserted HIGH (via pull-up), the device operates in DDR II+ mode with 2.5-cycle read latency at up to 550 MHz; when pulled LOW, the PLL is disabled and the device reverts to DDR I mode with 1-cycle latency and maximum 167 MHz operation. This allows backward compatibility and reduced timing complexity in legacy designs.

How does ZQ calibration affect signal integrity?

ZQ calibration adjusts the output driver impedance of DQ, CQ, and CQ pins to match the system's data bus characteristic impedance. By connecting an external resistor (RQ) from ZQ to ground, the device sets its output impedance to 0.2 × RQ - typically 25 Ω or 34 Ω - minimizing reflections, improving eye diagram margins, and ensuring reliable 1100 MT/s operation on controlled-impedance PCBs.

Can CY7C1168KV18 be used in depth-expanded configurations?

Yes - the device supports seamless depth expansion using LD and R/W signals across multiple chips. When one device completes a read, its outputs are automatically tristated on the next K rising edge, allowing immediate access to the next device without wait states. The QVLD signal remains synchronized across devices when echo clocks are shared, preserving timing determinism.

What is the role of the BWS pins in write operations?

BWS[1:0] are active-LOW byte write select signals that gate write data to specific 9-bit segments of the 18-bit DQ bus: BWS0 enables DQ[8:0], BWS1 enables DQ[17:9]. During a write, only enabled bytes are updated; unselected bytes retain their prior values. This eliminates the need for read-modify-write cycles when updating partial words, reducing bus traffic and latency.