Cypress Semiconductor Corp CY7C1170KV18-450BZXC

Overview

CY7C1170KV18-450BZXC from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined DDR II+ SRAM with 2.5-cycle read latency, 450 MHz clock operation, HSTL I/O interface, and integrated PLL for precise data placement. It delivers 900 MB/s peak bandwidth via double-data-rate transfers at 900 Mbps per data pin, used in high-speed packet buffering and network line-card memory subsystems.

For engineers reviewing the CY7C1170KV18-450BZXC datasheet, CY7C1170KV18-450BZXC pinout, CY7C1170KV18-450BZXC application, or CY7C1170KV18-450BZXC equivalent, key selection criteria include its 450 MHz maximum operating frequency, 512K × 36 organization, DOFF-controlled DDR I/DDR II+ mode switching, echo-clock–based data capture, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a two-word burst architecture where each address access retrieves two consecutive 36-bit words on alternating K/K rising edges. Internal pipelining enables back-to-back read initiation every K cycle, with output timing tightly referenced to echo clocks CQ/CQ for deterministic data capture without board-level skew compensation.

The device integrates a PLL that locks to the K input clock to generate internal timing for 2.5-cycle latency operation; when DOFF is asserted LOW, the PLL disables and the device reverts to single-cycle DDR I timing up to 167 MHz. All synchronous inputs (A, R/W, LD, BWS[3:0]) are registered on K, while data I/O uses both K and K edges for DDR alignment.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72T3652L10PF and IS61WV102432BLL-10BLI, CY7C1170KV18-450BZXC provides 2× higher effective bandwidth via DDR and eliminates board-level timing closure challenges through echo clocks and QVLD - critical for 450 MHz+ systems where asynchronous alternatives require complex wait-state management.

Availability

CY7C1170KV18-450BZXC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and avionics data acquisition buffer applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for CY7C1170KV18-450BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.

CY7C1170KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking and telecom infrastructure where traditional asynchronous or QDR SRAMs introduce timing complexity.

FAQ

What is the function of the DOFF pin on CY7C1170KV18-450BZXC?

The DOFF (DLL/PLL Off) pin is an active-LOW control that disables the internal PLL. When DOFF = LOW, the device operates in DDR I mode with 1-cycle read latency and maximum frequency limited to 167 MHz. When DOFF = HIGH, the PLL is enabled and the device runs in DDR II+ mode with 2.5-cycle latency at up to 450 MHz. This pin must be pulled up via ≤10 kΩ resistor for normal operation.

How does the ZQ pin affect output driver impedance?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance to 48 Ω (0.2 × RQ). This ensures consistent signal integrity across process/voltage/temperature variations. If ZQ is tied directly to VDDQ, the device enters minimum-impedance mode (~30 Ω); it must never be left floating or connected to GND.

Can CY7C1170KV18-450BZXC operate with VDDQ = 1.5 V?

Yes. The device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V nominal operation. At 1.5 V, HSTL-compatible output drive strength and input thresholds remain within JEDEC HSTL Class I specifications, and AC timing parameters (e.g., tAC, tHZ) are guaranteed per datasheet limits at 450 MHz.

What is the role of QVLD in system timing design?

QVLD is a synchronous output that asserts edge-aligned with CQ/CQ to indicate when DQ[35:0] data is valid. Unlike fixed-delay approaches, QVLD eliminates the need for static timing margins - system logic uses QVLD as a gating signal to sample DQ, enabling robust data capture even with PVT-induced clock/data skew in high-speed PCBs.