Cypress Semiconductor Corp CY7C1170KV18-550BZC

Overview

CY7C1170KV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 512K × 36, operating at 550 MHz with 2.5-cycle read latency and dual-edge DDR data transfer at 1100 Mbps. It uses HSTL I/O, 1.8 V core supply (VDD), and supports 1.4–1.8 V I/O supply (VDDQ). It serves as high-bandwidth buffer memory in network packet processors and telecom line cards requiring precise timing alignment via echo clocks CQ/CQ and QVLD.

For engineers reviewing the CY7C1170KV18 datasheet, CY7C1170KV18 pinout, CY7C1170KV18 application, or CY7C1170KV18 equivalent, key selection criteria include burst depth (2-word), DOFF-configurable latency mode (DDR II+ vs DDR I), echo-clock-synchronized data capture, and FBGA-165 package compatibility with high-density PCB layouts.

Technical Context

The CY7C1170KV18 implements a synchronous pipelined architecture with two independent 256K × 36 SRAM arrays, using rising edges of complementary K/K clocks to latch address/control and register write data. Read data is driven on both K and K rising edges, delivering two consecutive 36-bit words per access.

Its DDR II+ operation relies on an internal PLL for accurate data placement; when DOFF is HIGH, it enables 2.5-cycle latency with echo clocks CQ/CQ edge-aligned to output data and QVLD signal. When DOFF is LOW, it reverts to DDR I timing (1-cycle latency) up to 167 MHz, with simplified clocking but reduced bandwidth.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with IDT72T3655L10BG and ISSI IS61WV102436B, the CY7C1170KV18 uniquely balances 550 MHz DDR II+ performance with flexible latency configuration (via DOFF) and HSTL I/O compatibility-making it optimal for upgrade paths from DDR I systems needing higher bandwidth without full QDR IV redesign.

Availability

CY7C1170KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, FPGA-based protocol accelerators, and high-speed test equipment requiring stable component supply and long-term production continuity.

Supply support for CY7C1170KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

The CY7C1170KV18 belongs to Cypress's DDR II+ SRAM product line, engineered specifically for systems demanding deterministic low-latency burst access with echo-clock–assisted data capture in FPGA- and ASIC-based infrastructure equipment.

FAQ

What is the function of the DOFF pin on CY7C1170KV18?

The DOFF pin is an active-LOW PLL disable control. When asserted LOW, it disables the internal PLL and forces the device into DDR I mode with 1-cycle read latency and maximum 167 MHz operation. When HIGH (typically pulled up via ≤10 kΩ resistor), the PLL is enabled, supporting DDR II+ mode at up to 550 MHz with 2.5-cycle latency. This dual-mode capability enables hardware-compatible migration between performance tiers.

How does the ZQ pin affect output driver calibration?

The ZQ pin connects to an external 240 Ω resistor to ground, enabling on-die termination calibration. The device measures this reference and adjusts the output driver strength of DQ[35:0], CQ, and CQ to achieve 0.2 × RQ = 48 Ω output impedance. This ensures consistent signal integrity across process, voltage, and temperature variations-critical for maintaining eye diagram margins at 1.1 Gbps.

Can CY7C1170KV18 be used in depth-expanded memory configurations?

Yes. The device supports seamless depth expansion via its automatic tristate behavior: when a read access is deselected, outputs are tri-stated on the next rising edge of K, eliminating bus contention. Combined with QVLD and echo clocks, this allows multiple CY7C1170KV18 devices to share a common data bus without external bus transceivers or wait-state insertion.

What is the role of the LD (Load) signal in burst operation?

The LD signal is a synchronous load strobe sampled on the rising edge of K. It initiates each burst transaction-whether read or write-and latches the current address and R/W state. All accesses are two-word bursts, and LD must meet strict setup/hold timing relative to K to ensure correct address registration and avoid metastability in the internal address pipeline.