Cypress Semiconductor Corp CY7C1245KV18-400BZXI
- Part No.:
- CY7C1245KV18-400BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1245KV18-400BZXI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:116
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Product details
Overview
CY7C1245KV18-400BZXI from Cypress Semiconductor is a 36-Mbit QDR® II+ SRAM with 1M × 36 organization, 2.0-cycle read latency, 400 MHz clock frequency, DDR interfaces on independent read/write ports, and HSTL I/O supporting 1.4–1.8 V VDDQ. It delivers 2.88 Gbps bandwidth in high-speed networking line cards requiring deterministic burst memory access.
For engineers reviewing the CY7C1245KV18-400BZXI datasheet, CY7C1245KV18-400BZXI pinout, CY7C1245KV18-400BZXI application, or CY7C1245KV18-400BZXI equivalent, key selection factors include its 400 MHz operation with 2-cycle latency, separate RPS/WPS control, echo clocks (CQ/CQ) for timing margin, QVLD data validity signaling, and 165-ball FBGA package compatibility with high-density PCB layouts.
Technical Context
The CY7C1245KV18-400BZXI implements a true dual-port synchronous architecture with physically isolated read and write data paths-no bus turnaround required. Its four-word burst transfers 144 bits per read cycle (36-bit × 4), synchronized to both K and K rising edges, achieving full-duplex 900 MT/s effective data rate at 400 MHz clock.
An internal PLL aligns output timing to input clocks, enabling precise data capture via echo clocks CQ and CQ. The DOFF pin selects between QDR II+ mode (2-cycle latency, up to 450 MHz) and QDR I mode (1-cycle latency, ≤167 MHz), while ZQ enables programmable output impedance matching to system trace impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 configuration) |
| Max Clock Frequency | 400 MHz - defines maximum sustained transaction rate for burst reads/writes |
| Read Latency | 2.0 clock cycles - fixed pipeline delay from RPS assertion to first valid Q[35:0] word |
| Data Interface | Double-data-rate (DDR) on both ports - transfers data on every rising edge of K and K |
| VDDQ Range | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system I/O rails |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count high-speed memory |
| Core Voltage | 1.8 V ± 0.1 V - strict regulation required for stable internal SRAM array operation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Write data inputs | 36-bit synchronous write data bus sampled on rising edges of K/K; supports byte-write masking via BWS[3:0] |
| Q[35:0] | Read data outputs | 36-bit synchronous read data bus driven on rising edges of K/K; tri-stated when RPS is deasserted |
| RPS | Read port select | Active-low synchronous enable for read operations; initiates four-word burst on next K edge |
| WPS | Write port select | Active-low synchronous enable for write operations; latches D[35:0] and BWS[3:0] on K edge |
| K / K | Input clocks | Differential clock pair; rising edges sample all synchronous inputs and drive DDR outputs |
| CQ / CQ | Echo clocks | Free-running output clocks synchronized to K/K; used by external logic to latch Q[35:0] with timing margin |
| QVLD | Valid data indicator | Output pulse edge-aligned with CQ/CQ; signals when Q[35:0] carries valid burst data |
| DOFF | PLL disable | Active-low control: HIGH enables QDR II+ mode (2-cycle latency); LOW forces QDR I mode (1-cycle, ≤167 MHz) |
| ZQ | Impedance calibration | Connect to resistor-to-ground (RQ) to set output driver impedance to 0.2×RQ; or tie to VDDQ for minimum impedance |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Eliminates data bus turnaround overhead and contention, enabling true concurrent access in packet buffering |
| Four-word burst architecture | Reduces address bus toggling by 75% versus single-word access-critical for reducing routing congestion in switch ASIC interfaces |
| Programmable output impedance (ZQ) | Enables dynamic matching to PCB trace impedance without external termination resistors, improving signal integrity at 900 MT/s |
| Synchronous self-timed writes | Internal write timing control ensures reliable data capture across voltage/temperature variations without external write-enable strobes |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant testing of solder joints and interconnects in high-density BGA assemblies |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Dual-port burst SRAM acting as ingress/egress FIFO buffer with zero-bus-turnaround latency. Use Value: 400 MHz operation and 2-cycle latency ensure sub-5 ns read response time for real-time traffic shaping and QoS enforcement. |
Use Scenario: Holding control-plane metadata and packet headers in 10G/40G optical transport equipment. IC Role / Device Role / Timing Role: High-bandwidth memory co-processor interfacing directly with SerDes MAC controllers. Use Value: DDR interface and echo clocks (CQ/CQ) provide deterministic setup/hold margins for reliable capture at 900 MT/s. |
| Baseband Processing Cache | Test Equipment Pattern Memory |
|
Use Scenario: Temporary storage of OFDM symbol buffers in LTE/5G baseband units during FFT/IFFT processing. IC Role / Device Role / Timing Role: Low-latency burst memory serving as ping-pong buffer between DSP cores and RF front-end. Use Value: Separate RPS/WPS allows simultaneous write of new symbols while reading previous ones-enabling continuous processing flow. |
Use Scenario: Storing stimulus/response vectors in automated test systems for semiconductor ATE platforms. IC Role / Device Role / Timing Role: Deterministic-access memory providing glitch-free pattern generation at 400 MHz clock rates. Use Value: QVLD signal eliminates need for complex strobe alignment logic, simplifying test head controller design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II+ SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+, 1M × 36, 10 ns access, 250 MHz max clock, no integrated PLL | Limited to lower-frequency systems where 400 MHz bandwidth is not required | Select when cost sensitivity outweighs bandwidth needs and board-level clock synthesis is preferred over on-die PLL |
| ISSI IS61WV102436B | 36-Mbit QDR II, 1M × 36, 2.5-cycle latency, 333 MHz max clock, no DOFF mode switching | Cannot emulate QDR I behavior; lacks latency flexibility for legacy migration paths | Choose only if system requires fixed 2.5-cycle latency and does not need QDR I fallback capability |
Compared with IDT72T3615L10BG and IS61WV102436B, CY7C1245KV18-400BZXI uniquely supports runtime latency mode switching (via DOFF), higher 400 MHz operation, and integrated PLL-based echo clock generation-making it optimal for next-generation high-throughput, low-jitter memory subsystems.
Availability
CY7C1245KV18-400BZXI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply across multi-year production cycles.
Supply support for CY7C1245KV18-400BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding communications and industrial applications.
CY7C1245KV18 belongs to the QDR® II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in packet-switched infrastructure where bus turnaround latency and timing margin are critical constraints.
FAQ
What is the function of the DOFF pin on CY7C1245KV18-400BZXI?
The DOFF (PLL Disable) pin controls the device's operational mode: when asserted LOW, it disables the internal PLL and forces QDR I timing with 1-cycle read latency and maximum 167 MHz clock rate; when HIGH, the device operates in QDR II+ mode with 2-cycle latency and up to 450 MHz. This provides hardware-selectable latency/bandwidth trade-offs without firmware changes.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin enables on-die output impedance calibration: connecting it to a precision resistor to ground sets CQ, CQ, and Q[35:0] driver impedance to 0.2×RQ, matching typical 50 Ω PCB traces. This reduces reflections and improves eye diagram margins at 900 MT/s-eliminating need for external series termination resistors and saving board space.
Can CY7C1245KV18-400BZXI perform simultaneous read and write to the same address?
No. While the device supports concurrent read and write operations to *different* addresses due to independent ports, writing to an address currently being read from results in undefined data on the read port during that burst. The architecture guarantees coherency only for non-overlapping accesses; overlapping address conflicts must be managed by system-level arbitration logic.
What is the role of QVLD in system timing validation?
QVLD is an edge-aligned output that pulses high exactly when Q[35:0] carries valid data from the current four-word burst. Unlike relying on clock edges alone, QVLD provides unambiguous, jitter-immune indication of data validity-enabling robust capture in FPGA-based controllers without tight static timing closure on Q[35:0] paths.
CY7C1245KV18-400BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1245KV18-400BZXI FAQ
1.How can I place an order for CY7C1245KV18-400BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1245KV18-400BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1245KV18-400BZXI reliable?
The price and inventory of CY7C1245KV18-400BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1245KV18-400BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1245KV18-400BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1245KV18-400BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1245KV18-400BZXI?
CY7C1245KV18-400BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1245KV18-400BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1245KV18-400BZXI?
For technical support, including CY7C1245KV18-400BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1245KV18-400BZXI requirements.
6.How does Aetrix verify that CY7C1245KV18-400BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1245KV18-400BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1245KV18-400BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1245KV18-400BZXI?
All CY7C1245KV18-400BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1245KV18-400BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1245KV18-400BZXI part is unused and in its original packaging.
Return procedure for CY7C1245KV18-400BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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