Cypress Semiconductor Corp CY7C1250KV18-400BZC
- Part No.:
- CY7C1250KV18-400BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1250KV18-400BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:107
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Product details
Overview
CY7C1250KV18 from Cypress Semiconductor is a 36-Mbit (1M × 36) synchronous DDR II+ SRAM with two-word burst architecture, 2.0-cycle read latency at 400 MHz, HSTL I/O, and integrated PLL for precise data placement. It operates with core VDD = 1.8 V ± 0.1 V and I/O VDDQ = 1.4 V to 1.8 V, and is used in high-bandwidth packet buffering and network switching ASIC interfaces.
For engineers reviewing the CY7C1250KV18 datasheet, CY7C1250KV18 pinout, CY7C1250KV18 application, or CY7C1250KV18 equivalent, key selection criteria include DDR II+ timing compliance, echo clock (CQ/CQ) synchronization, QVLD validity signaling, and FBGA-165 package compatibility with high-speed PCB layout constraints.
Technical Context
The CY7C1250KV18 implements a pipelined synchronous SRAM core with dual-edge DDR interface: address and control inputs are registered on K rising edges, while write data is latched on both K and K rising edges. Read data is driven synchronously on both K and K rising edges, with output timing aligned to echo clocks CQ/CQ.
It supports configurable latency modes via DOFF pin: when asserted HIGH, it operates as DDR II+ with 2.0-cycle read latency at up to 450 MHz; when LOW, it reverts to DDR I mode with 1-cycle latency and ≤167 MHz operation. Internal PLL ensures accurate data-eye placement relative to echo clocks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 36 Mbit (1M × 36 configuration) |
| Max Clock Frequency | 400 MHz - defines maximum sustained bandwidth of 28.8 GB/s (36-bit × 2 words × 400 MHz) |
| Read Latency | 2.0 clock cycles - fixed pipeline delay between LD assertion and first valid data on Q[35:0] |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports interoperability with both 1.5 V and 1.8 V memory subsystems |
| Output Interface | HSTL Class I - enables impedance-matched, low-noise signaling at >400 MHz with ZQ calibration |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory placement |
| Core Supply | VDD = 1.8 V ± 0.1 V - strict regulation required to maintain SRAM stability and timing margins |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit DDR data path; inputs sampled on K/K rising edges, outputs edge-aligned to CQ/CQ with QVLD strobe |
| K / K | Differential input clocks | Positive/negative clock pair driving all synchronous registers; K rising edge initiates transactions |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K for simplified system-level data capture without routing skew |
| QVLD | Valid data indicator | Active-HIGH signal edge-aligned to CQ/CQ, indicating when DQ[35:0] carries valid burst data |
| DOFF | PLL enable/disable control | Active-LOW pin selecting DDR II+ (HIGH) vs. DDR I (LOW) mode; determines latency and max frequency |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground to tune CQ/CQ/DQ output drive strength to 0.2 × RQ |
| LD | Load strobe | Synchronous address/control latch enable; sampled on K rising edge to define start of burst transaction |
| R/W | Read/write direction control | Sampled with LD on K rising edge; HIGH = read, LOW = write - defines access type for loaded address |
| BWS[3:0] | Byte write select | Four active-LOW signals enabling independent 9-bit byte writes across 36-bit bus; avoids full-word overwrites |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% versus single-word SRAMs, lowering system EMI and routing complexity |
| Integrated PLL with echo clocks (CQ/CQ) | Eliminates need for external clock forwarding; enables deterministic data capture without per-device deskew |
| QVLD validity indicator | Provides unambiguous, edge-aligned confirmation of valid data on DQ[35:0], simplifying FPGA/ASIC receiver logic |
| Programmable output impedance (ZQ) | Allows dynamic tuning of DQ/CQ drive strength to match PCB trace impedance, improving signal integrity at 900 Mbps |
| Configurable latency mode (DOFF) | Enables hardware-selectable DDR II+ (2-cycle, 400 MHz) or DDR I (1-cycle, ≤167 MHz) operation for design flexibility |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit switch fabric ASICs. IC Role / Device Role / Timing Role: High-throughput, low-latency buffer memory interfacing directly to SerDes MAC controllers via DDR II+ bus. Use Value: 2.0-cycle latency and 400 MHz clock support deliver deterministic 28.8 GB/s bandwidth needed for 10G/25G line-rate buffering. |
Use Scenario: Frame assembly/disassembly in carrier-grade optical transport equipment (OTN, SONET). IC Role / Device Role / Timing Role: Burst-mode SRAM providing synchronized access to time-division multiplexed payload buffers. Use Value: Echo clocks CQ/CQ and QVLD eliminate inter-lane skew, enabling reliable capture across 36-bit parallel paths at 400 MHz. |
| High-Speed Test Equipment Memory | Defense Radar Signal Processing |
|
Use Scenario: Capturing real-time analog-to-digital samples in automated test systems with pattern generators. IC Role / Device Role / Timing Role: Synchronous burst memory acting as acquisition FIFO between ADC interface and FPGA processing engine. Use Value: HSTL I/O and ZQ calibration ensure clean signal edges at 900 Mbps DDR rate, critical for sub-nanosecond timing accuracy. |
Use Scenario: Storing pulse-Doppler radar return data in airborne electronic warfare platforms. IC Role / Device Role / Timing Role: Radiation-tolerant burst SRAM supporting deterministic read-after-write timing in safety-critical avionics. Use Value: DOFF-configurable latency allows fallback to DDR I mode (1-cycle) under thermal stress, preserving functional safety margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+ SRAM, 10 ns read latency, no internal PLL, requires external echo clock generation | Lacks integrated PLL and QVLD; demands more complex board-level clock distribution and capture logic | Preferred where legacy QDR II+ ecosystem exists and board space permits discrete echo clock circuitry |
| ISSI IS61WV102436BLL-15BLI | 36-Mbit DDR2 SRAM, 15 ns access, asynchronous reset, no ZQ calibration or echo clocks | Lower bandwidth (≤200 MHz), no CQ/CQ or QVLD; suitable only for non-critical, lower-speed buffering | Selected for cost-sensitive industrial controls where 400 MHz DDR II+ performance is unnecessary |
Compared with IDT72T3615L10BG and IS61WV102436BLL-15BLI, the CY7C1250KV18 uniquely integrates PLL, echo clocks, and QVLD-reducing system-level timing validation effort and eliminating external clock forwarding components required by QDR II+ alternatives.
Availability
CY7C1250KV18 is available at Aetrix Electronics and suitable for network switching, telecom line cards, high-speed test instrumentation, and defense radar signal processing requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1250KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications applications.
The CY7C1250KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in networking ASICs and FPGA-based signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1250KV18?
The DOFF pin controls the internal PLL: when pulled HIGH, the device operates in DDR II+ mode with 2.0-cycle read latency and up to 450 MHz clock rate; when pulled LOW, it disables the PLL and reverts to DDR I mode with 1-cycle latency and ≤167 MHz operation. This provides hardware-selectable performance vs. timing simplicity trade-off.
How does the ZQ pin affect signal integrity?
The ZQ pin connects to an external resistor to ground to calibrate the output driver impedance of DQ[35:0], CQ, and CQ pins to 0.2 × RQ. This matching minimizes reflections and improves eye diagram margin at 900 Mbps DDR rates, especially critical for long PCB traces in backplane applications.
Why are CQ and CQ necessary if K and K are already provided?
CQ and CQ are echo clocks-free-running, phase-aligned replicas of K and K generated internally and output with matched delay to DQ[35:0]. They eliminate routing skew between clock and data paths, allowing receivers to capture data using local CQ/CQ instead of globally distributed K/K, simplifying high-speed layout.
Can CY7C1250KV18 be used in depth-expanded memory configurations?
Yes - its synchronous tristate control and QVLD signal allow seamless depth expansion. When deselected, outputs automatically tristate after one K cycle, enabling interleaved access across multiple devices without wait states or external bus contention logic.
CY7C1250KV18-400BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1250KV18-400BZC FAQ
1.How can I place an order for CY7C1250KV18-400BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1250KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1250KV18-400BZC reliable?
The price and inventory of CY7C1250KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1250KV18-400BZC is usually 5 days.
3.What payment methods are accepted for CY7C1250KV18-400BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1250KV18-400BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1250KV18-400BZC?
CY7C1250KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1250KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1250KV18-400BZC?
For technical support, including CY7C1250KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1250KV18-400BZC requirements.
6.How does Aetrix verify that CY7C1250KV18-400BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1250KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1250KV18-400BZC meets industry standards.
7.What is the process for return or replacement of CY7C1250KV18-400BZC?
All CY7C1250KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1250KV18-400BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1250KV18-400BZC part is unused and in its original packaging.
Return procedure for CY7C1250KV18-400BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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