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Cypress Semiconductor Corp CY7C1263XV18-633BZXC

Part No.:
CY7C1263XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1263XV18-633BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,310

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Product details

Overview

CY7C1263XV18 from Infineon Technologies (formerly Cypress) is a 36-Mbit QDR® II+ Xtreme SRAM with 2 M × 18 organization, 633 MHz clock support, 2.5-cycle read latency, and separate read/write DDR ports enabling concurrent high-bandwidth memory access in networking packet buffers and FPGA co-processor interfaces.

For engineers reviewing the CY7C1263XV18 datasheet, CY7C1263XV18 pinout, CY7C1263XV18 application, or CY7C1263XV18 equivalent, key selection criteria include its 1266 MT/s DDR data rate, HSTL I/O compatibility, 165-ball FBGA package, DOFF-controlled PLL mode switching, and depth expansion via RPS/WPS port selects.

Technical Context

This SRAM implements a true dual-port synchronous architecture with independent read and write data paths-no bus turnaround required. It uses two input clocks (K and K) for precise DDR timing, with all inputs sampled on rising edges and outputs edge-aligned to echo clocks CQ/CQ.

The device integrates a programmable PLL for accurate data placement and supports two operational modes: QDR II+ mode (2.5-cycle latency, up to 633 MHz) when DOFF is HIGH, and QDR I mode (1-cycle latency, ≤167 MHz) when DOFF is LOW. Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4–1.6 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 configuration)
Max Clock Frequency 633 MHz - enables 1266 MT/s DDR throughput per port
Read Latency 2.5 cycles (QDR II+ mode); 1 cycle (QDR I mode with DOFF = LOW)
I/O Voltage VDDQ = 1.4–1.6 V - compatible with 1.5 V HSTL-18 systems
Core Supply VDD = 1.8 V ± 0.1 V - low-power operation with tight regulation requirement
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-speed routing
Burst Length Four-word burst - reduces address bus toggling frequency by 4×

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data input 18-bit parallel data latched on rising edges of K/K; supports byte-write via BWS0/BWS1
Q[17:0] Synchronous read data output 18-bit DDR output aligned to CQ/CQ; tristated automatically on RPS deassertion
RPS / WPS Port select control Active-low signals enabling independent read/write port activation for depth expansion
K / K Dual-phase clock inputs Rising-edge-triggered clocks for all synchronous operations; K drives read, K drives write
CQ / CQ Echo clock outputs Free-running, phase-matched copies of K/K used for reliable high-speed data capture
DOFF PLL enable/disable LOW disables internal PLL, forcing QDR I timing (≤167 MHz); HIGH enables full QDR II+ mode
QVLD Data validity indicator Asserted synchronously with valid Q[17:0] output; edge-aligned to CQ/CQ for timing margin assurance

Key Features

Feature Design Value
Separate read/write DDR ports Enables simultaneous read and write at full bandwidth without bus contention or turnaround delay
Four-word burst architecture Reduces effective address bus toggle rate by 75%, easing PCB layout and signal integrity constraints
Programmable PLL with DOFF control Allows runtime switching between high-performance QDR II+ (2.5-cycle) and legacy QDR I (1-cycle) timing
HSTL-18 I/O with variable drive Ensures impedance-matched signaling at 1.5 V; ZQ pin enables system-level output impedance calibration
JTAG 1149.1 test access port Supports boundary scan testing and in-system diagnostics without requiring additional test logic

Applications

High-Speed Network Switch Buffer FPGA-Based Protocol Accelerator

Use Scenario: Storing and forwarding packet headers and metadata in Layer 2/3 switches operating at 10 Gbps+ line rates.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as a zero-latency, non-blocking packet buffer with concurrent ingress/egress access.

Use Value: 1266 MT/s DDR throughput per port sustains full-duplex 10G+ traffic without backpressure; four-word burst minimizes address bus congestion.

Use Scenario: Offloading TCP/IP checksum, encryption, or packet classification tasks from host CPU using FPGA-accelerated datapath.

IC Role / Device Role / Timing Role: High-bandwidth local memory for FPGA soft-core processors or pipeline stages requiring deterministic read/write timing.

Use Value: 2.5-cycle read latency ensures predictable pipeline stage timing; separate ports prevent stalls during mixed read/write workloads.

Telecom Baseband Processing Real-Time Video Frame Buffer

Use Scenario: Intermediate storage for OFDM symbol processing in LTE/5G baseband units with strict sub-microsecond latency budgets.

IC Role / Device Role / Timing Role: Low-jitter, pipelined memory for FFT/IFFT buffers and channel estimation tables.

Use Value: Echo clocks CQ/CQ provide clean, phase-aligned strobes for reliable data capture at 633 MHz; PLL ensures jitter < 15 ps RMS.

Use Scenario: Inter-frame buffering in broadcast-grade video encoders handling 4K60 YUV422 streams.

IC Role / Device Role / Timing Role: Synchronous frame store supporting simultaneous write (ingest) and read (encode) at pixel-clock rates.

Use Value: Independent RPS/WPS controls allow seamless ping-pong frame switching; HSTL I/O guarantees signal integrity across 20+ cm trace lengths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1263XV18-553BZXC Lower max frequency (553 MHz); same 2 M × 18 config, 2.5-cycle latency, and FBGA package Targeted at cost-sensitive designs where 633 MHz headroom is unnecessary Select when system clock is ≤553 MHz and thermal/power budget is constrained
AS7C33618B-15PCCN Asynchronous SRAM; no DDR, no PLL, no echo clocks; 15 ns access time; SOJ-54 package Suitable only for legacy systems lacking DDR timing infrastructure or requiring simple control logic Choose only for non-pipelined, low-throughput applications where QDR features add unnecessary complexity

Compared with CY7C1263XV18-553BZXC, the -633BZXC delivers +14% bandwidth and tighter timing margins; versus AS7C33618B-15PCCN, it provides deterministic 2.5-cycle latency, concurrent access, and scalable DDR I/O-but requires full QDR timing design discipline.

Availability

CY7C1263XV18 is available at Aetrix Electronics and suitable for high-speed network switch buffers, FPGA-based protocol accelerators, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and guaranteed Pb-free compliance.

Supply support for CY7C1263XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the QDR® II+ Xtreme SRAM product line, maintaining full technical documentation, manufacturing continuity, and customer service.

This device belongs to Infineon's high-performance memory portfolio, designed specifically for deterministic, low-latency, high-throughput data buffering in wired communications infrastructure and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1263XV18?

The DOFF (PLL Turn Off) pin is an active-low control that disables the internal PLL. When pulled LOW, the device reverts to QDR I timing with 1-cycle read latency and maximum frequency limited to 167 MHz. For full QDR II+ operation at 633 MHz, DOFF must be held HIGH via a ≤10 kΩ pull-up resistor to VDDQ.

Can CY7C1263XV18 interface directly with a 1.5 V HSTL system?

Yes. The device supports VDDQ = 1.4–1.6 V, making it fully compatible with 1.5 V HSTL-18 I/O standards. Its variable-drive HSTL output buffers and ZQ pin for impedance calibration ensure robust signal integrity in 1.5 V environments without level-shifting circuitry.

How does depth expansion work with RPS and WPS pins?

Depth expansion is achieved by cascading multiple CY7C1263XV18 devices using independent RPS (Read Port Select) and WPS (Write Port Select) signals. Each device responds only when its respective RPS or WPS is asserted, allowing independent read/write access across banks while sharing the same address and data buses.

Is the 165-ball FBGA package lead-free and RoHS compliant?

Yes. The CY7C1263XV18-633BZXC is supplied in a Pb-free, RoHS-compliant 165-ball FBGA package (package code BZXC), with matte tin surface finish and JEDEC-standard moisture sensitivity level (MSL) 3 rating per J-STD-020.

CY7C1263XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II+
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1263XV18-633BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1263XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1263XV18-633BZXC reliable?

The price and inventory of CY7C1263XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1263XV18-633BZXC is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1263XV18-633BZXC transactions.

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CY7C1263XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1263XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1263XV18-633BZXC?

For technical support, including CY7C1263XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1263XV18-633BZXC requirements.

6.How does Aetrix verify that CY7C1263XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1263XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1263XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1263XV18-633BZXC?

All CY7C1263XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1263XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1263XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C1263XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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