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Cypress Semiconductor Corp CY7C1265XV18-633BZXC

Part No.:
CY7C1265XV18-633BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1265XV18-633BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:100

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Product details

Overview

CY7C1265XV18 from Infineon Technologies (formerly Cypress) is a 1 M × 36, 36-Mbit QDR® II+ Xtreme SRAM with four-word burst architecture, 2.5-cycle read latency, and 633 MHz clock operation. It features separate read/write ports, DDR interfaces on both ports (1266 MHz data rate), HSTL I/O, and 1.8 V core / 1.5 V I/O supply. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1265XV18 datasheet, CY7C1265XV18 pinout, CY7C1265XV18 application, or CY7C1265XV18 equivalent, key selection criteria include concurrent read/write capability, echo clock (CQ/CQ) timing support, DOFF-configurable PLL mode, depth expansion via RPS/WPS, and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

The device implements a true dual-port synchronous architecture with independent read and write pipelines, enabling fully concurrent transactions without bus turnaround. Its QDR II+ Xtreme core uses a phase-locked loop (PLL) to align output data with echo clocks CQ and CQ, ensuring precise 1266 MHz DDR capture at system level.

All address and control inputs are registered on rising edges of K and K clocks; data outputs are edge-aligned to CQ/CQ. The DOFF pin selects between 633 MHz QDR II+ mode (PLL enabled, 2.5-cycle latency) and 167 MHz QDR I mode (PLL disabled, 1-cycle latency), providing backward compatibility and flexible timing margining.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1 M × 36 organization)
Max Clock Frequency 633 MHz - enables 1266 MT/s DDR data rate per port
Read Latency 2.5 clock cycles - deterministic timing for pipelined burst reads
Core Supply 1.8 V ± 0.1 V - low-power, noise-sensitive core domain
I/O Supply Range 1.4 V to 1.6 V - supports 1.5 V HSTL-compatible signaling
Package 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for high-density routing and signal integrity
Burst Length Four-word burst - reduces address bus toggling frequency by 4× vs. single-word access

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide DDR input bus sampled on rising edges of K/K; supports byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output bus edge-aligned to CQ/CQ; tristated when RPS is deasserted
RPS Read port select Active-low synchronous enable; initiates 4-word burst read on rising edge of K
WPS Write port select Active-low synchronous enable; initiates write transaction on rising edge of K
BWS[3:0] Byte write select Four active-low signals controlling 9-bit byte lanes; enables partial-word writes without read-modify-write
K / K Differential clock inputs Single-ended clock pair driving all synchronous logic; rising edges latch inputs and drive outputs
CQ / CQ Echo clock outputs Free-running, phase-aligned copies of K/K used for source-synchronous data capture in FPGA/ASIC receivers
QVLD Data validity indicator Output strobe aligned to CQ/CQ rising edge; asserts one cycle before valid Q[35:0] data appears
DOFF PLL disable control Active-low pin that disables internal PLL; reverts device to QDR I timing (1-cycle latency, ≤167 MHz)
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground to calibrate output driver impedance to 48 Ω (0.2 × RQ)

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay; enables full-duplex memory access essential for line-rate packet buffering
Four-word burst architecture Reduces effective address bus frequency by 75%, easing timing closure on high-speed interconnects
Source-synchronous echo clocks (CQ/CQ) Enables reliable 1266 MT/s DDR capture in FPGAs without complex deskew circuitry
Programmable output impedance (ZQ) Allows dynamic matching to PCB trace impedance, minimizing reflections and improving signal integrity
DOFF-configurable PLL mode Supports migration from legacy QDR I systems while enabling full QDR II+ performance in new designs

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10/25/100 GbE switch fabric ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with concurrent read (forwarding engine) and write (ingress parser) operations.

Use Value: 2.5-cycle latency and 1266 MT/s bandwidth meet strict line-rate timing budgets without requiring multiple smaller SRAMs.

Use Scenario: Capturing high-fidelity waveform samples in automated test equipment (ATE) pattern generators.

IC Role / Device Role / Timing Role: High-throughput memory buffer interfacing directly to multi-GHz DACs and ADCs via source-synchronous CQ/CQ timing.

Use Value: Echo clock alignment eliminates setup/hold violations at 1266 MT/s, reducing jitter-induced bit errors in precision analog stimulus.

Telecom Baseband Processing Real-Time Video Frame Buffering

Use Scenario: Temporary storage of OFDM symbol data during channel estimation and MIMO processing in 5G NR baseband units.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory supporting parallel read/write streams for FFT/IFFT pipeline stages.

Use Value: Independent RPS/WPS control enables simultaneous symbol loading and result extraction without arbitration overhead.

Use Scenario: Frame buffering between video encoder and display controller in broadcast-grade 4K/60fps production gear.

IC Role / Device Role / Timing Role: Synchronous burst memory supplying continuous pixel streams to HDMI TX PHY with minimal jitter.

Use Value: HSTL I/O and calibrated ZQ impedance ensure clean eye diagrams at 1266 MT/s across long backplane traces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C362000B-166BIN 2 M × 18 configuration, 166 MHz max frequency, no echo clocks or PLL, CMOS I/O Limited to lower bandwidth (<333 MT/s); lacks source-synchronous timing for >200 MHz systems Select only for cost-sensitive, non-line-rate applications where latency and bandwidth are relaxed
MT47H64M16HR-37E DDR2 SDRAM, 64 M × 16, 375 MHz clock, 750 MT/s, requires refresh and command sequencing Higher density but asynchronous refresh overhead and command latency degrade real-time determinism Prefer for large frame buffers where capacity outweighs latency sensitivity; avoid for packet forwarding paths

Compared with AS7C362000B-166BIN and MT47H64M16HR-37E, CY7C1265XV18 delivers deterministic 2.5-cycle latency and true concurrent access-critical for real-time packet switching-while its echo clocks and ZQ calibration simplify high-speed PCB design where signal integrity dominates timing margin.

Availability

CY7C1265XV18 is available at Aetrix Electronics and suitable for network switch fabric design, high-speed test instrumentation, telecom baseband processing, and broadcast video frame buffering requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1265XV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, industrial, and memory solutions following its acquisition of Cypress Semiconductor.

This device belongs to the QDR® II+ Xtreme SRAM product line, engineered specifically for deterministic, high-bandwidth memory access in networking, test, and telecom infrastructure where bus turnaround elimination and source-synchronous timing are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1265XV18?

The DOFF pin is an active-low PLL disable control. When asserted LOW, it disables the internal phase-locked loop, reverting the device to QDR I timing mode with 1-cycle read latency and a maximum operating frequency of 167 MHz. In normal operation, DOFF must be pulled HIGH via a ≤10 kΩ resistor to enable full QDR II+ performance at 633 MHz.

How does the ZQ pin affect output driver behavior?

The ZQ pin connects to an external 240 Ω resistor to ground to calibrate the output driver impedance to 48 Ω (0.2 × RQ). This ensures optimal signal integrity on matched-impedance PCB traces. Connecting ZQ directly to VDDQ enables minimum output impedance mode; leaving it unconnected or tied to GND violates specifications and may cause undefined behavior.

Can CY7C1265XV18 perform simultaneous read and write operations to the same memory location?

No. While the device supports fully concurrent read and write operations to *different* addresses, writing to an address currently being read from results in undefined data on the Q[35:0] bus. The architecture guarantees coherency only for independent address accesses; overlapping address conflicts require external arbitration in system design.

What is the role of the QVLD signal in system timing?

QVLD is a synchronous output strobe edge-aligned to CQ and CQ, asserting one clock cycle before valid read data appears on Q[35:0]. It serves as a hardware-ready signal for downstream logic (e.g., FPGA capture registers), eliminating the need for fixed delay chains or dynamic deskew circuits when latching high-speed DDR outputs.

CY7C1265XV18-633BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
633 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1265XV18-633BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1265XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1265XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1265XV18-633BZXC is usually 5 days.

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6.How does Aetrix verify that CY7C1265XV18-633BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1265XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1265XV18-633BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1265XV18-633BZXC?

All CY7C1265XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1265XV18-633BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1265XV18-633BZXC part is unused and in its original packaging.

Return procedure for CY7C1265XV18-633BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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