Cypress Semiconductor Corp CY7C1268XV18-633BZXC
- Part No.:
- CY7C1268XV18-633BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1268XV18-633BZXC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:109
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Product details
Overview
CY7C1268XV18-633BZXC from Infineon Technologies (formerly Cypress) is a 36-Mbit DDR II+ Xtreme SRAM with 2 M × 18 organization, 633 MHz clock frequency, 2.5-cycle read latency, and HSTL I/O interface operating at 1.4–1.6 V VDDQ. It implements two-word burst architecture with echo clocks (CQ/CQ) and QVLD for precise high-speed data capture in memory subsystems of network switches and telecom line cards.
For engineers reviewing the CY7C1268XV18-633BZXC datasheet, CY7C1268XV18-633BZXC pinout, CY7C1268XV18-633BZXC application, or CY7C1268XV18-633BZXC equivalent, key selection criteria include DDR II+ timing compliance, 165-ball FBGA (13 × 15 × 1.4 mm) mechanical fit, DOFF-controlled latency mode switching, and JTAG 1149.1 test access support.
Technical Context
This SRAM integrates a synchronous pipelined core with dual-edge DDR interface logic, PLL-based clock alignment, and echo-clock–driven output timing. All address, control, and data signals are registered on rising edges of complementary K/K clocks, enabling deterministic 1266 MT/s data transfer at 633 MHz.
The device supports two operational modes via DOFF: DDR II+ mode (DOFF = HIGH) delivers 2.5-cycle read latency with full 633 MHz bandwidth; DDR I mode (DOFF = LOW) reduces latency to 1 cycle but limits max frequency to 167 MHz. Internal impedance tuning via ZQ pin enables system-level signal integrity optimization.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density | 36 Mbit (2 M × 18), enabling compact high-bandwidth buffer storage without depth expansion |
| Max Clock Frequency | 633 MHz - defines maximum sustained data throughput of 1266 MT/s on DQ bus |
| Read Latency | 2.5 cycles (DOFF = HIGH) - determines minimum read turnaround time in DDR II+ mode |
| VDDQ Range | 1.4 V to 1.6 V - sets compatible termination voltage for HSTL Class I receivers |
| Core Voltage | 1.8 V ± 0.1 V - constrains power supply regulation tolerance and noise margin |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - specifies board layout footprint and thermal dissipation profile |
| Interface Standard | HSTL inputs / variable-drive HSTL outputs - ensures signal integrity at >600 MHz with controlled slew and on-die termination |
Pinout & Package
Package: 165-ball fine-pitch ball grid array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Synchronous bidirectional data bus | Transfers 18-bit words on rising edges of both K and K; tristated automatically during deselect |
| K / K | Complementary input clocks | Reference timing for all synchronous operations; K drives address/control, both drive data sampling/output |
| CQ / CQ | Output echo clocks | Free-running, phase-aligned copies of K/K used by system logic to capture DQ data without skew compensation |
| QVLD | Valid data indicator | Asserted edge-aligned with CQ/CQ to signal when DQ[17:0] contains stable, valid read data |
| DOFF | PLL disable control | Active-low pin selecting DDR II+ (HIGH) or DDR I (LOW) timing mode and latency behavior |
| ZQ | Impedance calibration reference | Connects to external resistor to ground to calibrate output driver strength matching system trace impedance |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling by 50% per access, lowering system-level EMI and routing complexity |
| Echo clock outputs (CQ/CQ) | Eliminates need for board-level clock forwarding or deskew circuitry in multi-SRAM systems |
| Programmable output impedance via ZQ | Enables dynamic on-die termination matching to PCB trace impedance without external resistors |
| JTAG 1149.1 test access port | Supports boundary scan testing and in-system programming without dedicated debug headers |
| DOFF-selectable latency mode | Allows same hardware design to operate in either high-throughput (2.5-cycle) or low-latency (1-cycle) configurations |
Applications
| Network Switch Buffering | Telecom Line Card Memory |
|---|---|
|
Use Scenario: High-speed packet buffering in Layer 2/3 Ethernet switches handling 10 GbE and 25 GbE line rates. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing low-jitter, deterministic read/write response for ingress/egress queues. Use Value: 633 MHz clock + 2.5-cycle latency enables ≥12.6 GB/s sustained bandwidth per device, meeting switch fabric backplane timing budgets. |
Use Scenario: Frame buffering and header processing in 40G/100G OTN and CPRI fronthaul interfaces. IC Role / Device Role / Timing Role: Synchronous DDR II+ memory interfacing directly with FPGA-based packet processors using echo-clock–synchronized capture. Use Value: CQ/CQ echo clocks and QVLD eliminate interconnect skew, enabling reliable 1266 MT/s operation across dense backplane traces. |
| High-Performance Test Equipment | Radar Signal Processing |
|
Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) with sub-nanosecond timing resolution. IC Role / Device Role / Timing Role: Low-latency memory staging buffer between high-speed ADC/DAC and FPGA control logic. Use Value: DOFF pin allows runtime switching between 2.5-cycle (high-throughput) and 1-cycle (low-latency) modes to match test vector requirements. |
Use Scenario: Pulse-Doppler radar digital beamforming modules requiring deterministic memory access for FFT windowing and filtering. IC Role / Device Role / Timing Role: Burst-mode SRAM storing complex IQ samples with synchronized echo-clock–driven output for pipeline-aligned processing. Use Value: HSTL I/O and 1.8 V core reduce switching noise in mixed-signal RF environments while maintaining >12 GB/s bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1268XV18-553BZXC | 553 MHz max clock (vs. 633 MHz); identical pinout, package, and feature set | Lower bandwidth (1106 MT/s) suits cost-sensitive designs where 1266 MT/s is not required | Select when system clock budget permits margin below 633 MHz and thermal/power constraints favor lower frequency |
| AS7C362000B-166BIN | Asynchronous SRAM, 166 MHz max, no DDR, no echo clocks, no PLL, 54-pin TSOP-II package | Lacks burst, DDR, or timing synchronization features; suitable only for legacy non-burst control-plane memory | Only viable for brownfield upgrades where DDR interface redesign is prohibited and bandwidth <2 GB/s is acceptable |
Compared with CY7C1268XV18-553BZXC, the -633BZXC delivers 14% higher bandwidth and tighter timing margins; versus AS7C362000B-166BIN, it provides synchronous DDR operation, echo-clock timing, and 6× peak throughput - making it essential for modern high-speed data path applications.
Availability
CY7C1268XV18-633BZXC is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, high-performance test equipment, and radar signal processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1268XV18-633BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including DDR II+ Xtreme SRAMs, with global manufacturing, quality, and support infrastructure.
CY7C1268XV18 belongs to the Xtreme SRAM product line, engineered specifically for deterministic, low-jitter, high-bandwidth memory subsystems in networking, telecom, and test instrumentation where DDR timing precision and echo-clock synchronization are critical.
FAQ
What is the function of the DOFF pin on CY7C1268XV18-633BZXC?
The DOFF pin controls internal PLL operation: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle read latency and 633 MHz capability; when LOW, it reverts to DDR I mode with 1-cycle latency and 167 MHz maximum frequency. This enables hardware-compatible dual-mode operation without changing PCB layout or firmware timing parameters.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin connects to an external resistor to ground to calibrate internal output driver impedance, setting CQ, CQ, and DQ output strength to 0.2 × RQ. This matches transmission line impedance (typically 50 Ω), minimizing reflections and ensuring clean eye diagrams at 1266 MT/s - eliminating need for discrete series termination resistors.
Can CY7C1268XV18-633BZXC be used without the PLL enabled?
Yes - asserting DOFF LOW disables the PLL and places the device in DDR I mode, supporting 1-cycle read latency up to 167 MHz. In this mode, timing specifications differ significantly from DDR II+ mode, and echo clocks (CQ/CQ) remain functional but aligned to base clock rather than PLL-adjusted phase.
What is the role of QVLD in system-level data capture?
QVLD is a synchronous output that transitions edge-aligned with CQ and CQ to indicate when DQ[17:0] data is valid and stable. System logic uses QVLD - not clock edges alone - to latch read data, preventing metastability and ensuring reliable capture even under PVT variation or jitter conditions.
CY7C1268XV18-633BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 633 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1268XV18-633BZXC FAQ
1.How can I place an order for CY7C1268XV18-633BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1268XV18-633BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1268XV18-633BZXC reliable?
The price and inventory of CY7C1268XV18-633BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1268XV18-633BZXC is usually 5 days.
3.What payment methods are accepted for CY7C1268XV18-633BZXC?
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CY7C1268XV18-633BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1268XV18-633BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1268XV18-633BZXC?
For technical support, including CY7C1268XV18-633BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1268XV18-633BZXC requirements.
6.How does Aetrix verify that CY7C1268XV18-633BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C1268XV18-633BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1268XV18-633BZXC meets industry standards.
7.What is the process for return or replacement of CY7C1268XV18-633BZXC?
All CY7C1268XV18-633BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1268XV18-633BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1268XV18-633BZXC part is unused and in its original packaging.
Return procedure for CY7C1268XV18-633BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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