Cypress Semiconductor Corp CY7C1312KV18-250BZXI
- Part No.:
- CY7C1312KV18-250BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1312KV18-250BZXI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1312KV18-250BZXI from Cypress Semiconductor is a 1M × 18 (18-Mbit), 1.8 V QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns clock period), two-word burst architecture, and DDR interfaces delivering 500 MB/s bandwidth. It supports concurrent read/write transactions in high-speed networking buffers, packet classification engines, and FPGA co-processor memory subsystems.
For engineers reviewing the CY7C1312KV18-250BZXI datasheet, CY7C1312KV18-250BZXI pinout, CY7C1312KV18-250BZXI application, or CY7C1312KV18-250BZXI equivalent, key selection criteria include its 1.8 V core / 1.4–1.8 V I/O supply, 165-ball FBGA package, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and echo-clock–assisted data capture for >500 MHz effective data rates.
Technical Context
This QDR II SRAM implements true dual-port synchronous pipelined access: independent K/K clocks latch write addresses and data on rising edges, while C/C clocks drive read outputs with echo clocks (CQ/CQ) aligned to output timing. The device uses internal self-timed write circuitry and multiplexed address bus latching on alternating K/K edges.
It delivers full data coherency with no bus turnaround, supports depth expansion via RPS/WPS controls, and integrates JTAG 1149.1 boundary scan and programmable ZQ impedance matching. The DOFF pin selects between QDR I–compatible 1-cycle latency (LOW) and optimized QDR II 1.5-cycle latency (HIGH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1M × 18 organization) |
| Max Clock Frequency | 250 MHz - defines 4 ns clock period and maximum sustained throughput |
| Data Rate | 500 MB/s - achieved via DDR read/write ports (2 × 250 MHz transfers per port) |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth in controller design |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - enables interoperability with 1.5 V or 1.8 V I/O systems |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count high-speed memory |
| Interface Standard | HSTL Class I - ensures signal integrity at 500 MB/s with controlled drive strength |
Pinout & Package
The CY7C1312KV18-250BZXI is housed in a 165-ball Fine-Pitch Ball Grid Array (FBGA) package measuring 13 mm × 15 mm × 1.4 mm, compliant with JEDEC MO-245. Pin assignments follow a defined ball map with dedicated differential clock inputs, echo clocks, byte write selects, and multiplexed address/data control signals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Write Data Inputs | Synchronous inputs sampled on rising edge of K/K; 18-bit parallel write path |
| Q[17:0] | Read Data Outputs | Synchronous outputs driven on rising edge of C/C; tristated when RPS inactive |
| RPS, WPS | Port Select Controls | Active-LOW enables independent read or write port activation for depth expansion |
| BWS[1:0] | Byte Write Selects | Active-LOW controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes |
| K, K | Write/Read Address Clocks | Rising edges latch address and data; K used for read address, K for write address |
| C, C | Output Data Clocks | Deskew-capable complementary clocks driving Q[17:0] outputs with precise timing alignment |
| CQ, CQ | Echo Clock Outputs | Free-running copies of C/C referenced to output data; simplify high-speed capture at controller |
| ZQ | Impedance Calibration Input | Connects to external resistor to ground to tune Q/CQ output driver impedance to system trace Z₀ |
Key Features
| Feature | Design Value |
|---|---|
| Separate Read/Write Ports | Eliminates bus turnaround overhead and enables true concurrent access without arbitration logic |
| Two-Word Burst Architecture | Delivers 36 bits per clock cycle (2 × 18-bit words), doubling effective bandwidth over single-word devices |
| DOFF-Configurable Read Latency | Selects 1-cycle (QDR I mode) or 1.5-cycle (QDR II mode) latency to match controller pipeline requirements |
| HSTL Class I Output Drivers | Variable-strength drivers support impedance matching across diverse PCB stackups and trace lengths |
| JTAG 1149.1 Boundary Scan | Enables production testability and interconnect verification without physical probe access |
Applications
| High-Speed Network Packet Buffer | FPGA-Based Protocol Accelerator |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards with real-time classification. IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-latency buffer between MAC and traffic manager, synchronized to line-rate clocks. Use Value: Concurrent read/write eliminates serialization bottlenecks, enabling full wire-speed buffering at 25 Gbps with deterministic 1.5-cycle latency. | Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection in reconfigurable compute platforms. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory tightly coupled to FPGA fabric, interfaced via native HSTL I/O banks. Use Value: 500 MB/s bandwidth sustains multi-gigabit dataflow between soft-core processors and custom accelerators without stalling pipelines. |
| Telecom Baseband Processing | Real-Time Video Frame Buffer |
Use Scenario: Holding intermediate FFT and channel estimation results in LTE/5G baseband units with strict timing deadlines. IC Role / Device Role / Timing Role: Low-latency memory for DSP-to-FPGA data exchange, clocked synchronously with OFDM symbol timing. Use Value: 1.5-cycle read latency and echo clocks enable reliable capture at 250 MHz, reducing timing margin pressure on FPGA I/O logic. | Use Scenario: Buffering uncompressed 4K@60fps YUV422 video streams between image sensor interface and video processing engine. IC Role / Device Role / Timing Role: Dual-port frame store supporting simultaneous write (sensor input) and read (display/encode) operations. Use Value: Independent RPS/WPS allows seamless frame handoff with zero pixel loss, critical for broadcast-grade video systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C33128A-250BIN | Asynchronous SRAM; no DDR, no echo clocks, 15 ns access time | Lacks concurrent read/write; unsuitable for >200 MHz burst streaming | Only viable for legacy designs where timing margin allows asynchronous interface |
| IS61WV102418BLL-250BLI | Synchronous single-port SRAM; 1.8 V, 250 MHz, but no QDR architecture or burst capability | Requires external arbitration for read/write interleaving; halves effective bandwidth | Acceptable only if system controller handles port multiplexing and latency tolerance exceeds 10 ns |
Compared with AS7C33128A-250BIN and IS61WV102418BLL-250BLI, the CY7C1312KV18-250BZXI uniquely delivers true concurrent access, echo-clock–assisted timing closure, and 500 MB/s bandwidth-making it irreplaceable in high-throughput, low-latency memory subsystems requiring deterministic dual-port behavior.
Availability
CY7C1312KV18-250BZXI is available at Aetrix Electronics and suitable for high-speed network packet buffers, FPGA-based protocol accelerators, and telecom baseband processing requiring stable component supply and long-term industrial availability.
Supply support for CY7C1312KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The CY7C1312KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking infrastructure and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1312KV18-250BZXI?
The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables QDR II operation with 1.5-cycle read latency for optimized bandwidth; when LOW or tied to VSS, it reverts to QDR I–compatible 1-cycle latency. This setting directly affects controller pipeline staging and must be fixed at power-up.
Can CY7C1312KV18-250BZXI operate with only one clock domain?
Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate clock pairs. In this mode, all timing references derive from K/K, and echo clocks CQ/CQ track K/K instead of C/C, simplifying board layout at minor bandwidth cost.
How does ZQ pin calibration work in practice?
The ZQ pin connects to an external precision resistor (typically 240 Ω) to ground, allowing the device to calibrate its HSTL output drivers to match system trace impedance. This adjusts drive strength to maintain signal integrity at 500 MB/s; connecting ZQ directly to VDDQ enables minimum impedance mode for short traces.
Is CY7C1312KV18-250BZXI pin-compatible with other QDR II devices in the same family?
Yes - CY7C1312KV18-250BZXI shares identical 165-ball FBGA pinout and signal mapping with CY7C1312KV18-300BZXI and CY7C1312KV18-333BZXI, differing only in speed grade and AC timing specifications. This enables drop-in replacement within the same speed bin and layout reuse across performance tiers.
CY7C1312KV18-250BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1312KV18-250BZXI FAQ
1.How can I place an order for CY7C1312KV18-250BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1312KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1312KV18-250BZXI reliable?
The price and inventory of CY7C1312KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312KV18-250BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1312KV18-250BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1312KV18-250BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1312KV18-250BZXI?
CY7C1312KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1312KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1312KV18-250BZXI?
For technical support, including CY7C1312KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312KV18-250BZXI requirements.
6.How does Aetrix verify that CY7C1312KV18-250BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1312KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312KV18-250BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1312KV18-250BZXI?
All CY7C1312KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312KV18-250BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1312KV18-250BZXI part is unused and in its original packaging.
Return procedure for CY7C1312KV18-250BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1312KV18-250BZXI Tags

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STMicroelectronics
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Microchip Technology

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Microchip Technology

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Microchip Technology

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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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Microchip Technology

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Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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