Cypress Semiconductor Corp CY7C1312KV18-300BZC
- Part No.:
- CY7C1312KV18-300BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1312KV18-300BZC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,715
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Product details
Overview
CY7C1312KV18 from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock operation (666 MT/s DDR), 1.5-cycle read latency (DOFF = HIGH), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent burst transfers in networking packet buffers, high-speed test equipment memory subsystems, and FPGA co-processor caches.
For engineers reviewing the CY7C1312KV18 datasheet, CY7C1312KV18 pinout, CY7C1312KV18 application, or CY7C1312KV18 equivalent, key selection criteria include dual-port concurrency, echo-clock–assisted data capture, HSTL-compatible 165-ball FBGA packaging, and JTAG 1149.1 testability for high-reliability embedded memory systems.
Technical Context
The CY7C1312KV18 implements a true dual-port synchronous architecture with independent K/K clocks for write address/data capture and C/C clocks for read data output timing-enabling precise DDR alignment without bus turnaround. Its internal pipelined control logic supports simultaneous read and write operations on the same clock cycle.
It uses echo clocks CQ/CQ referenced to C/C to simplify high-speed data capture at 666 MT/s, and integrates a PLL for accurate data placement. The DOFF pin selects between 1.5-cycle (QDR II) and 1-cycle (QDR I) read latency modes, preserving backward compatibility while enabling bandwidth scaling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (1M × 18 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s effective throughput via DDR interfaces |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable mode for system timing flexibility |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-voltage I/O interfacing |
| Data Bus Width | 18-bit bidirectional data path per port - optimized for burst-aligned packet processing |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layouts |
| JTAG Support | IEEE 1149.1 compliant TAP - enables boundary-scan testing and production validation |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; 18-bit parallel input for burst writes |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C; tristated when RPS is deasserted |
| K, K | Write/read address & control clock inputs | Rising-edge–triggered; multiplexed for address latching and command initiation |
| C, C | Read data output clocks | Deskew-capable complementary pair for timing-critical DDR capture |
| CQ, CQ | Output echo clocks | Free-running, phase-aligned copies of C/C - used by controller for source-synchronous sampling |
| WPS, RPS | Port select controls | Active-low enables; decouple read/write arbitration at system level |
| BWS[1:0] | Byte write select | Independent 9-bit byte masking (BWS0 → D[8:0], BWS1 → D[17:9]) |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune Q/CQ output driver impedance (0.2 × RQ) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead and prevents data contention in full-duplex memory access |
| Two-word burst architecture | Delivers 36 bits per clock cycle (18-bit × 2) - matches common packet payload widths |
| Echo clock support (CQ/CQ) | Enables source-synchronous data capture at 666 MT/s without complex PCB trace length matching |
| Programmable output impedance (ZQ) | Allows dynamic tuning of Q/CQ driver strength to match board trace impedance - reduces signal integrity margin loss |
| DOFF-configurable latency | Switches between QDR II (1.5-cycle) and QDR I (1-cycle) timing - eases migration and interoperability |
Applications
| Packet Buffer Memory | FPGA Co-Processor Cache |
|---|---|
Use Scenario: Storing ingress/egress packets in 10G/40G Ethernet line cards with real-time forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as zero-latency, concurrent-access buffer between MAC and traffic manager ASICs. Use Value: 666 MT/s bandwidth and burst-aligned 18-bit transfers reduce packet queuing delay and eliminate arbitration stalls. | Use Scenario: Providing low-latency scratchpad memory for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based compute accelerators. IC Role / Device Role / Timing Role: Off-chip cache extension synchronized to FPGA's high-speed I/O banks using C/C and CQ/CQ timing. Use Value: Echo clocks enable reliable 333 MHz interface timing closure without custom delay chains or training sequences. |
| High-Speed Test Equipment Memory | Telecom Baseband Processing Buffer |
Use Scenario: Capturing multi-channel analog-to-digital samples at >500 MS/s in automated test systems. IC Role / Device Role / Timing Role: High-throughput acquisition buffer interfaced to ADC controllers via DDR LVDS or HSTL I/O. Use Value: Concurrent read/write allows continuous streaming into one half while servicing analysis from the other - no dead time. | Use Scenario: Supporting real-time FFT and channel estimation in LTE/5G baseband units with strict deterministic latency. IC Role / Device Role / Timing Role: Burst-aligned memory for symbol-level data exchange between DSP cores and RF front-end processors. Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides predictable timing margins for closed-loop feedback loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-bit × 512K, 10 ns async access; no DDR, no echo clocks, no DOFF latency selection | Used in legacy telecom systems requiring simple asynchronous interface; lacks QDR II timing precision | Select only if system clocking infrastructure cannot support DDR clocks or echo-clock capture |
| ISSI IS61WV102418B | 1M × 18, 1.8 V, but single-port SDR; max 200 MHz; no burst, no dual clocks, no JTAG | Suitable for cost-sensitive industrial controllers where concurrency and bandwidth are secondary | Choose only when QDR II features are unnecessary and budget constraints outweigh performance requirements |
Compared with IDT72T36120L10BG and IS61WV102418B, the CY7C1312KV18 uniquely delivers concurrent DDR read/write at 666 MT/s with echo-clock–assisted timing closure - essential for next-generation packet processing and FPGA acceleration where deterministic latency and full-duplex bandwidth are non-negotiable.
Availability
CY7C1312KV18 is available at Aetrix Electronics and suitable for networking packet buffers, FPGA co-processor caches, and high-speed test equipment requiring stable component supply across long-life industrial and telecom programs.
Supply support for CY7C1312KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for automotive, industrial, and communications markets.
The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in networking, test & measurement, and FPGA-based computing - emphasizing deterministic timing, concurrent access, and system-level signal integrity.
FAQ
What is the function of the DOFF pin on CY7C1312KV18?
The DOFF (Double-Data-Rate OFF) pin configures read latency mode: when asserted HIGH, it enables QDR II operation with 1.5-cycle latency; when LOW or tied to VSS, it reverts to QDR I mode with 1-cycle latency. This pin directly controls internal pipeline staging and must be set at power-up before initialization.
Can CY7C1312KV18 operate with only a single clock domain?
Yes - the device supports single-clock mode where K/K and C/C are driven by the same differential clock pair. In this configuration, Q[17:0] and CQ/CQ are timed to K/K edges, simplifying clock tree design at the cost of reduced skew margin versus dual-clock operation.
How does ZQ pin calibration affect signal integrity?
ZQ connects to an external resistor (typically 100 Ω to ground) to calibrate output driver impedance for Q[17:0] and CQ/CQ pins. This ensures consistent 50 Ω (or system-matched) termination, minimizing reflections and jitter - critical for maintaining eye opening at 666 MT/s DDR rates.
Is JTAG boundary scan supported during normal operation?
Yes - IEEE 1149.1 TAP remains fully functional during active memory operation. Test instructions (SAMPLE/PRELOAD, EXTEST, INTEST) can be executed without halting read/write transactions, enabling in-system diagnostics and production test without interrupting real-time data flow.
CY7C1312KV18-300BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1312KV18-300BZC FAQ
1.How can I place an order for CY7C1312KV18-300BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1312KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1312KV18-300BZC reliable?
The price and inventory of CY7C1312KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1312KV18-300BZC is usually 5 days.
3.What payment methods are accepted for CY7C1312KV18-300BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1312KV18-300BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1312KV18-300BZC?
CY7C1312KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1312KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1312KV18-300BZC?
For technical support, including CY7C1312KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1312KV18-300BZC requirements.
6.How does Aetrix verify that CY7C1312KV18-300BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1312KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1312KV18-300BZC meets industry standards.
7.What is the process for return or replacement of CY7C1312KV18-300BZC?
All CY7C1312KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1312KV18-300BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1312KV18-300BZC part is unused and in its original packaging.
Return procedure for CY7C1312KV18-300BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1312KV18-300BZC Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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Microchip Technology

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Microchip Technology

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Microchip Technology
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AT24C08C-STUM-T
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