Cypress Semiconductor Corp CY7C1312KV18-333BZC

Overview

CY7C1312KV18 from Cypress Semiconductor is a 1M × 18, 18-Mbit QDR® II SRAM with separate read/write ports, 333 MHz clock operation, DDR interfaces on both ports (666 MHz data rate), and 1.5-cycle read latency when DOFF = HIGH. It delivers high-bandwidth buffering for network packet processing in telecom line cards.

For engineers reviewing the CY7C1312KV18 datasheet, CY7C1312KV18 pinout, CY7C1312KV18 application, or CY7C1312KV18 equivalent, key selection criteria include its dual-clock DDR timing architecture, echo clock support (CQ/CQ), HSTL-compatible 1.4–1.8 V I/O, and 165-ball FBGA package with verified pin mapping for depth expansion via RPS/WPS and BWS signals.

Technical Context

This QDR II SRAM implements a synchronous pipelined architecture with independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are initiated on rising edges of K/K clocks, while output data is clocked by C/C with echo clocks CQ/CQ referenced to those outputs.

The device supports two-word burst transfers per access, full data coherency, and programmable output impedance via ZQ. It operates with core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V, enabling compatibility with both 1.5 V and 1.8 V systems while maintaining HSTL-18 signaling compliance.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-10BLI, CY7C1312KV18 uniquely delivers true concurrent DDR read/write at 333 MHz with echo-clock–assisted timing closure - essential for deterministic packet buffering in carrier-grade systems.

Availability

CY7C1312KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffers, and high-speed test equipment requiring stable component supply and long-term production continuity.

Supply support for CY7C1312KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with focus on signal integrity and timing-critical applications.

CY7C1312KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in networking ASIC/FPGA interfaces where dual-port concurrency and sub-cycle timing control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1312KV18?

The DOFF (Data Output OFF) pin selects read latency mode: when asserted HIGH, it configures the device for QDR II operation with 1.5-cycle read latency; when LOW or tied to VSS, it enables QDR I compatibility mode with 1-cycle latency. This pin directly controls internal pipeline staging and must be set before initialization.

Can CY7C1312KV18 operate with only one clock signal (K) instead of K/K and C/C pairs?

Yes - the device supports single-clock mode where K serves as both input and output clock, and Q[17:0] is driven on K's rising edge. In this mode, CQ is generated relative to K, and echo clock functionality remains active, though deskew benefits are reduced compared to dual-clock operation.

How does the ZQ pin affect signal integrity in high-speed layouts?

ZQ connects to an external resistor (typically 240 Ω) to ground, calibrating internal output drivers to match 50 Ω transmission lines. This reduces reflections and jitter on Q[17:0] and D[17:0], improving eye diagram margin at 666 MT/s - especially critical for >10 cm trace lengths on multilayer PCBs.

Is JTAG boundary scan supported during normal memory operation?

Yes - IEEE 1149.1 TAP controller operates independently of memory functions. Boundary scan can be executed while the SRAM performs active read/write cycles, enabling in-system test without halting data flow. TMS/TCK/TDI/TDO pins remain functional regardless of RPS/WPS state.