Cypress Semiconductor Corp CY7C1313KV18-250BZC

Overview

CY7C1313KV18-250BZC from Cypress Semiconductor is a 1 M × 18, 18-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum clock frequency (40 ns cycle time), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 Mbps per pin), echo clocks (CQ/CQ), and DOFF-selectable 1-cycle or 1.5-cycle read latency. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1313KV18-250BZC datasheet, CY7C1313KV18-250BZC pinout, CY7C1313KV18-250BZC application, or CY7C1313KV18-250BZC equivalent, key selection criteria include burst depth, QDR II timing compliance, FBGA-165 package compatibility, and DOFF-configurable read latency for system-level timing closure.

Technical Context

The device implements true dual-port synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling concurrent read and write operations without bus turnaround. Its internal 256 K × 18 memory array is organized across four sub-arrays, accessed via 18-bit multiplexed address bus (A[17:0]) latched on alternating K-clock edges.

Read data is driven synchronously on C/C rising edges with echo clocks (CQ/CQ) aligned to output data edges, minimizing skew in high-speed capture. Write operations use on-chip self-timed control with BWS[1:0] byte write enables supporting partial-word updates without read-modify-write cycles.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10PA and IS61WV102418B, CY7C1313KV18-250BZC delivers 2.5× higher effective bandwidth via DDR + four-word burst, while its echo clocks and DOFF control provide deterministic timing unattainable with alternatives.

Availability

CY7C1313KV18-250BZC is available at Aetrix Electronics and suitable for network switch buffering, telecom line card memory, baseband processing, and radar signal processing requiring stable component supply across extended production lifecycles.

Supply support for CY7C1313KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications.

CY7C1313KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-bandwidth packet buffering in switched fabric architectures where concurrent read/write and low-latency access are critical.

FAQ

What is the function of the DOFF pin on CY7C1313KV18-250BZC?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency (QDR II mode) for optimized throughput; when LOW, it selects 1-cycle latency (QDR I compatibility mode). This setting directly affects pipeline stage count in connected ASICs or FPGAs and must be held stable during operation.

Does CY7C1313KV18-250BZC require external termination resistors?

No-CY7C1313KV18-250BZC integrates programmable on-die termination (ODT) for HSTL Class I outputs. External 50 Ω pull-downs are required only on CQ/CQ echo clocks per datasheet Figure 12; all data and address lines use internal ODT calibrated via ZQ pin.

Can CY7C1313KV18-250BZC operate with a single clock domain?

Yes-by tying K to C and K to C, the device operates in single-clock mode. In this configuration, read data appears on Q[17:0] one cycle after address assertion, and write data is captured on the same clock edge; however, full QDR II bandwidth and echo clock benefits are forfeited.

What is the purpose of BWS[1:0] pins in CY7C1313KV18-250BZC?

BWS[1:0] (Byte Write Select) pins enable partial-word writes: BWS0 controls D[8:0], BWS1 controls D[17:9]. When either is deasserted (HIGH), the corresponding 9-bit byte is masked during write cycles, preserving existing memory contents-eliminating need for read-modify-write sequences in protocol header updates.