Cypress Semiconductor Corp CY7C1313KV18-250BZXC

Overview

CY7C1313KV18-250BZXC from Cypress Semiconductor is a 1 M × 18-bit (18-Mbit), 250 MHz QDR® II SRAM with separate read/write ports, four-word burst architecture, and DDR interfaces operating at 500 MT/s per port. It uses 1.8 V core supply and 1.4–1.8 V I/O supply, features echo clocks (CQ/CQ), and supports concurrent read/write transactions in high-bandwidth networking and packet buffering applications.

For engineers reviewing the CY7C1313KV18-250BZXC datasheet, CY7C1313KV18-250BZXC pinout, CY7C1313KV18-250BZXC application, or CY7C1313KV18-250BZXC equivalent, key selection criteria include 1-cycle vs. 1.5-cycle read latency (DOFF-controlled), HSTL-18 output drive, 165-ball FBGA package compatibility, and depth expansion via RPS/WPS signals.

Technical Context

The CY7C1313KV18 implements QDR II architecture with fully independent read and write data paths-no bus turnaround required. Address latching occurs on alternating rising edges of K/K clocks, enabling true concurrency while maintaining full data coherency across both ports.

It employs synchronous self-timed writes, PLL-based data placement for timing accuracy, and dual input clock domains (K/K for address/control, C/C for output timing) to minimize skew. Echo clocks CQ/CQ are phase-aligned with Q[17:0] outputs to simplify high-speed capture at 500 MT/s.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, 0.8 mm ball pitch, JEDEC MO-245 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1313KV18-250BZXC delivers 3.6× higher sustained bandwidth, eliminates bus turnaround delays, and provides programmable latency-critical for packet-processing pipelines requiring precise timing alignment.

Availability

CY7C1313KV18-250BZXC is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and baseband processing requiring stable component supply and long-term industrial availability.

Supply support for CY7C1313KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive systems.

CY7C1313KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, high-throughput memory interfacing in packet-switched infrastructure and real-time signal processing.

FAQ

What is the function of the DOFF pin on CY7C1313KV18-250BZXC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin; when LOW, it enables 1-cycle latency for minimal delay. This setting directly controls internal pipeline depth and must be held stable during operation-no dynamic switching is supported.

Can CY7C1313KV18-250BZXC operate with only one clock domain (K-only)?

No. The device requires two independent clock domains: K/K for address/control/data input timing and C/C for output timing. Using only K (and tying C = K) violates AC timing specifications and disables echo clock functionality, risking data capture failure at rated speed. C/C must be driven separately.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] divides the 18-bit D[17:0] bus into two 9-bit groups: BWS0 controls D[8:0], BWS1 controls D[17:9]. Both are active-low; deasserting either leaves its corresponding 9-bit segment unchanged in memory. This enables partial-word updates without read-modify-write cycles.

Is VREF required for proper operation of CY7C1313KV18-250BZXC?

Yes. VREF must be supplied with a stable 0.75 V ±1% reference voltage, as it sets the switching threshold for all HSTL-18 I/O pins (D[17:0], Q[17:0], BWS, RPS, WPS, etc.). Omitting or misbiasing VREF causes undefined logic levels and functional failure, especially at 250 MHz operation.