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Cypress Semiconductor Corp CY7C1314KV18-250BZXI

Part No.:
CY7C1314KV18-250BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1314KV18-250BZXI.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,593

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Product details

Overview

CY7C1314KV18-250BZXI from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with separate read/write ports, 250 MHz operation (4 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers 1.8 Gbps bandwidth via DDR interfaces on both ports, supports two-word burst transfers, and uses echo clocks (CQ/CQ) for high-speed data capture in networking and packet buffering applications.

For engineers reviewing the CY7C1314KV18-250BZXI datasheet, CY7C1314KV18-250BZXI pinout, CY7C1314KV18-250BZXI application, or CY7C1314KV18-250BZXI equivalent, key selection criteria include its 512K × 36 organization, dual-clock DDR timing (K/K and C/C), DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA package compatibility with HSTL-18 I/O standards.

Technical Context

The CY7C1314KV18 implements QDR II architecture with fully independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). All synchronous inputs are registered on rising edges of K/K clocks; outputs are registered on C/C clocks, enabling precise DDR timing without bus turnaround.

It integrates a PLL for accurate data placement, JTAG 1149.1 test access, programmable output impedance via ZQ pin, and byte-write select (BWS[3:0]) for granular 9-bit write control. The device operates in either dual-clock mode (C/C + K/K) or single-clock mode (K/K only), with echo clocks CQ/CQ synchronized to C/C for deskewed data capture.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Organization 512K × 36-bit (18 Mbit total); enables 72-bit wide burst per access across two sequential words
Max Clock Frequency 250 MHz (4 ns period); defines maximum sustained throughput of 1.8 Gbps per port
Core Supply Voltage VDD = 1.8 V ±0.1 V; requires tight regulation for stable internal timing and low-power operation
I/O Supply Range VDDQ = 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V system logic levels
Read Latency 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines minimum time between RPS assertion and valid Q[35:0] output
Burst Length Fixed two-word burst; guarantees deterministic 72-bit data delivery per read/write command
Package 165-ball FBGA (13 × 15 × 1.4 mm); matches industry-standard footprint for high-density routing and thermal management

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant Pb-free construction.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit parallel data sampled on rising edge of K/K; supports full-width or byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit parallel data driven on rising edge of C/C; tristated when RPS is deasserted
A[17:0] Multiplexed address input 18-bit address latched alternately for read/write ports on K/K rising edges; reduces pin count vs. separate buses
RPS / WPS Port enable controls Active-low signals that gate read/write transactions independently; enables depth expansion with multiple devices
BWS[3:0] Byte write select Four independent 9-bit write masks; allows partial-word updates without read-modify-write overhead
C / C, K / K Dual differential clock inputs Separate clock pairs for output data (C/C) and input control (K/K); minimize skew and support source-synchronous timing
CQ / CQ Echo clocks Free-running copies of C/C; simplify receiver-side data capture by matching flight time of Q[35:0] signals
ZQ Impedance calibration input Connects to external resistor to ground to tune Q[35:0] and CQ/CQ output drive strength to match PCB trace impedance

Key Features

Feature Design Value
Independent read/write ports Eliminates bus turnaround delay and contention; enables true concurrent read+write at full bandwidth
Two-word DDR burst Delivers 72 bits per clock cycle (36-bit × 2) on both ports; doubles effective throughput vs. single-word devices
Configurable read latency DOFF pin selects 1-cycle (QDR I mode) or 1.5-cycle (QDR II mode) latency-enables trade-off between speed and timing margin
HSTL-18 compatible I/O Supports 1.4–1.8 V VDDQ; meets JEDEC HSTL Class I electrical specs for signal integrity in high-speed backplanes
JTAG 1149.1 boundary scan Enables in-system test and debug of interconnects without requiring physical probe access to high-density FBGA balls

Applications

Packet Buffering in Switch ASICs Line Card Memory in Telecom Routers

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches where low-latency random access is critical.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory buffer interfacing directly with switch fabric controllers using source-synchronous DDR timing.

Use Value: Concurrent read/write capability eliminates arbitration stalls; 250 MHz operation sustains ≥1.8 Gbps per port required for 10G+ line rates.

Use Scenario: Serving as frame buffer and lookup table memory in carrier-grade router line cards handling OC-192/STM-64 traffic.

IC Role / Device Role / Timing Role: Dual-port SRAM providing deterministic access to forwarding tables and packet queues under strict jitter and latency constraints.

Use Value: Echo clocks (CQ/CQ) align data capture windows with controller sampling edges, reducing setup/hold violations at 250 MHz.

Network Processor Co-Processor Memory High-Speed Test Equipment Pattern Memory

Use Scenario: Offloading packet classification and deep packet inspection tasks from host CPUs in DPI appliances and firewalls.

IC Role / Device Role / Timing Role: Dedicated memory resource for NPU microengines performing parallel rule lookups and stateful flow tracking.

Use Value: Byte-write select (BWS[3:0]) enables efficient update of individual 9-bit metadata fields without corrupting adjacent data.

Use Scenario: Storing stimulus and expected response vectors in automated test equipment for high-pin-count semiconductor validation.

IC Role / Device Role / Timing Role: Deterministic-access memory supporting simultaneous pattern generation (write) and comparison (read) at 250 MHz.

Use Value: 1.5-cycle latency mode (DOFF = HIGH) provides additional timing margin for complex compare logic synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10PA 36-bit × 256K, 10 ns access, 1.8 V core, but uses single-ended clocks (no C/C or CQ/CQ) Lacks echo clock support; requires tighter board-level skew control for >200 MHz operation Select when system clock distribution already handles skew compensation and lower cost is prioritized over ease of timing closure
ISSI IS61WV102436BLL-15BLI 36-bit × 256K, 15 ns access, 3.3 V tolerant I/O, no JTAG or ZQ calibration Slower max frequency (150 MHz); lacks advanced features like DOFF latency control and impedance tuning Select for legacy 3.3 V systems where bandwidth demand is ≤1.08 Gbps and testability requirements are minimal

Compared with IDT72T3615L10PA and IS61WV102436BLL-15BLI, CY7C1314KV18-250BZXI offers superior timing robustness via echo clocks and programmable impedance, higher bandwidth (1.8 Gbps), and configurable latency-making it optimal for new 10G+ networking designs demanding signal integrity and design margin.

Availability

CY7C1314KV18-250BZXI is available at Aetrix Electronics and suitable for packet buffering in network switches, line card memory in telecom routers, NPU co-processor memory, and high-speed test equipment pattern storage requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1314KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1314KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for high-throughput, low-latency packet processing and buffering in networking infrastructure where deterministic dual-port access and source-synchronous timing are essential.

FAQ

What is the function of the DOFF pin on CY7C1314KV18-250BZXI?

The DOFF (Data Output OFF) pin configures read latency: when tied HIGH, it enables QDR II mode with 1.5-cycle latency for improved timing margin; when tied LOW or to VSS, it reverts to QDR I mode with 1-cycle latency for maximum speed. This pin is sampled at power-up and remains static during operation-no dynamic switching is supported.

Can CY7C1314KV18-250BZXI operate with only one clock signal (K) instead of K/K?

Yes-it supports single-clock mode where K serves as both input and output clock. In this configuration, C and C are unused, and data is clocked out on K/K edges. However, echo clocks (CQ/CQ) remain functional and synchronized to K, preserving their utility for data capture alignment even without dedicated C/C inputs.

How does the ZQ pin affect signal integrity in high-speed designs?

ZQ connects to an external resistor (typically 240 Ω) to ground to calibrate the output driver impedance of Q[35:0] and CQ/CQ pins to ~48 Ω (0.2 × RQ). This matching minimizes reflections on controlled-impedance PCB traces, directly improving eye diagram opening and reducing bit error rates at 250 MHz DDR rates.

Is CY7C1314KV18-250BZXI pin-compatible with other QDR II SRAMs in the same package?

No-while it shares the 165-ball FBGA footprint with some Cypress QDR II devices (e.g., CY7C1312KV18), pin assignments differ significantly due to its 36-bit data width and expanded BWS[3:0] and address bus. Direct replacement requires schematic and layout revision; cross-reference must be verified against each device's pin definition table.

CY7C1314KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1314KV18-250BZXI FAQ

1.How can I place an order for CY7C1314KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1314KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1314KV18-250BZXI reliable?

The price and inventory of CY7C1314KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1314KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1314KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1314KV18-250BZXI?

CY7C1314KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1314KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1314KV18-250BZXI?

For technical support, including CY7C1314KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1314KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1314KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1314KV18-250BZXI?

All CY7C1314KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1314KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1314KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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