Cypress Semiconductor Corp CY7C1315KV18-250BZI
- Part No.:
- CY7C1315KV18-250BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1315KV18-250BZI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1315KV18 from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, four-word burst architecture, and separate read/write DDR ports operating at 333 MHz (666 MT/s effective). It features echo clocks (CQ/CQ), DOFF-selectable 1.5-cycle or 1-cycle read latency, and 1.8 V core / 1.4–1.8 V I/O supply. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1315KV18 datasheet, CY7C1315KV18 pinout, CY7C1315KV18 application, or CY7C1315KV18 equivalent, key selection considerations include its 165-ball FBGA package, BWS[3:0] byte write control, QDR II concurrent transaction capability, and HSTL-18-compatible output drive.
Technical Context
The CY7C1315KV18 implements a synchronous pipelined QDR II architecture with fully independent read and write data paths-no bus turnaround required. Its 512K × 36 configuration uses 17 address bits (A[16:0]), four-byte-wide write select (BWS[3:0]), and 36-bit bidirectional data interface (D[35:0]/Q[35:0]).
It employs dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to align data valid windows. The on-chip PLL ensures precise DDR timing placement, and DOFF pin configures read latency between 1 cycle (LOW) and 1.5 cycles (HIGH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | Selectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) |
| Core Supply | 1.8 V ±0.1 V - defines internal logic voltage and power integrity margin |
| I/O Supply Range | 1.4 V to 1.8 V - supports HSTL-18 and compatible 1.5 V systems |
| Burst Length | Four-word - reduces address bus toggling frequency by 4× vs. single-word access |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Sampled on rising edge of K/K; 36-bit parallel write path |
| Q[35:0] | Synchronous read data outputs | Driven on rising edge of C/C; full-width output for burst reads |
| A[16:0] | Multiplexed address inputs | Latched on rising edge of K; 17 bits support 512K depth |
| BWS[3:0] | Byte write select (active LOW) | Enables selective 8-bit writes: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27] |
| K, K | Input clocks for write/read address & data | Rising-edge-triggered; K used for address latching, K for data sampling |
| C, C | Output clocks for read data | Drive Q[35:0]; aligned with CQ/CQ for source-synchronous capture |
| CQ, CQ | Echo clocks | Copy of C/C with matched trace delay; simplify high-speed FPGA/ASIC data capture |
| DOFF | Read latency mode control | HIGH → 1.5-cycle latency; LOW → 1-cycle latency; sets pipeline depth |
| VDD, VDDQ, VSS | Power and ground terminals | VDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; dedicated VSS balls ensure signal integrity |
| ZQ | Impedance calibration reference | Connects to 240 Ω ±1% resistor to ground for HSTL output driver tuning |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write DDR ports | Enables true concurrent read+write without arbitration or bus turnaround overhead |
| Four-word burst architecture | Reduces address bus switching rate by 75%, lowering EMI and routing complexity |
| Echo clock (CQ/CQ) support | Eliminates need for board-level clock-data skew compensation in >300 MHz systems |
| Programmable read latency (DOFF) | Allows system-level trade-off between latency and timing closure: 1-cycle for low-latency apps, 1.5-cycle for tighter setup margins |
| HSTL-18-compatible variable drive | Configurable output strength matches PCB trace impedance (typically 50 Ω), minimizing reflections |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet headers and payloads in switch ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access. Use Value: 666 MT/s per port sustains full-duplex 24 Gbps data flow with deterministic 1-cycle latency for header lookup. | Use Scenario: Real-time waveform capture and pattern replay in automated test equipment (ATE) with >1 GHz sampling. IC Role / Device Role / Timing Role: High-throughput memory buffer interfacing directly to FPGA-based pattern generators and comparators. Use Value: Echo clocks (CQ/CQ) enable reliable source-synchronous capture at 333 MHz, eliminating complex deskew circuitry. |
| Telecom Baseband Processing | Defense Radar Signal Processing |
Use Scenario: Inter-stage buffering between FFT engines and channelizers in LTE/5G baseband units. IC Role / Device Role / Timing Role: Low-latency, burst-oriented memory for streaming complex IQ samples between processing blocks. Use Value: Four-word burst reduces address bus activity, easing timing closure on dense FPGA-to-SRAM interfaces. | Use Scenario: Pulse-Doppler radar front-end data buffering where deterministic latency and radiation tolerance are critical. IC Role / Device Role / Timing Role: Radiation-hardened-adjacent SRAM for real-time ADC sample storage prior to DSP. Use Value: 1.8 V core + HSTL I/O delivers lower dynamic power than 3.3 V alternatives while maintaining speed for pulse timing fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 10 ns access time, 165-ball FBGA, but only 333 MHz max clock; no DOFF latency selection | Fixed 1-cycle latency limits timing margin flexibility in high-skew layouts | Prefer when legacy IDT ecosystem compatibility is required over latency configurability |
| AS7C331024B-25BIN | Asynchronous SRAM, 25 ns access, SOJ-44; no DDR, no echo clocks, no burst | Cannot support concurrent read/write or >100 MHz sustained bandwidth | Only suitable for cost-sensitive, low-speed control-plane buffering where QDR features are unused |
Compared with IDT72T3615L10BG and AS7C331024B-25BIN, CY7C1315KV18 uniquely delivers configurable read latency, echo-clock–assisted timing closure, and true concurrent DDR bandwidth-making it optimal for next-generation networking and test equipment demanding both speed and design margin.
Availability
CY7C1315KV18 is available at Aetrix Electronics and suitable for network switch buffering, high-speed ATE memory subsystems, telecom baseband processing, and defense radar signal buffering requiring stable component supply across multi-year production cycles.
Supply support for CY7C1315KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing robustness.
The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in infrastructure equipment-specifically engineered to eliminate bus turnaround and support deterministic DDR timing in FPGA- and ASIC-based systems.
FAQ
What is the function of the DOFF pin on CY7C1315KV18?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for improved timing margin in high-skew layouts; when LOW, it enables 1-cycle latency for minimal delay in tightly controlled interfaces. This setting directly controls internal pipeline depth and affects tAC and tCO timing parameters.
How does the BWS[3:0] signal operate in CY7C1315KV18?
BWS[3:0] are active-LOW byte write enables controlling 8-bit segments of the 36-bit D[35:0] bus: BWS0 covers D[8:0], BWS1 covers D[17:9], BWS2 covers D[26:18], and BWS3 covers D[35:27]. All are sampled synchronously with K/K clock edges during write operations, allowing partial writes without disturbing unselected bytes.
Can CY7C1315KV18 operate with only one clock domain (K-only)?
Yes-CY7C1315KV18 supports single-clock-domain operation where K is used for both address and data capture, and C is used for output timing. In this mode, C and K must be phase-aligned, and echo clocks (CQ/CQ) remain functional for source-synchronous capture, though C/C skew management becomes more critical.
What is the purpose of the ZQ pin and how should it be terminated?
ZQ is the impedance calibration reference pin for HSTL-18 output drivers. It must be connected to a precision 240 Ω ±1% resistor tied to VSS (ground) to enable on-die termination calibration. Failure to terminate ZQ correctly results in inconsistent output drive strength and signal integrity degradation at 333 MHz.
CY7C1315KV18-250BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1315KV18-250BZI FAQ
1.How can I place an order for CY7C1315KV18-250BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1315KV18-250BZI reliable?
The price and inventory of CY7C1315KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZI is usually 5 days.
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Once your CY7C1315KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1315KV18-250BZI?
For technical support, including CY7C1315KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZI requirements.
6.How does Aetrix verify that CY7C1315KV18-250BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1315KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZI meets industry standards.
7.What is the process for return or replacement of CY7C1315KV18-250BZI?
All CY7C1315KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1315KV18-250BZI part is unused and in its original packaging.
Return procedure for CY7C1315KV18-250BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1315KV18-250BZI Tags

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