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Cypress Semiconductor Corp CY7C1315KV18-250BZI

Part No.:
CY7C1315KV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1315KV18-250BZI.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,725

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Product details

Overview

CY7C1315KV18 from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, four-word burst architecture, and separate read/write DDR ports operating at 333 MHz (666 MT/s effective). It features echo clocks (CQ/CQ), DOFF-selectable 1.5-cycle or 1-cycle read latency, and 1.8 V core / 1.4–1.8 V I/O supply. Used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1315KV18 datasheet, CY7C1315KV18 pinout, CY7C1315KV18 application, or CY7C1315KV18 equivalent, key selection considerations include its 165-ball FBGA package, BWS[3:0] byte write control, QDR II concurrent transaction capability, and HSTL-18-compatible output drive.

Technical Context

The CY7C1315KV18 implements a synchronous pipelined QDR II architecture with fully independent read and write data paths-no bus turnaround required. Its 512K × 36 configuration uses 17 address bits (A[16:0]), four-byte-wide write select (BWS[3:0]), and 36-bit bidirectional data interface (D[35:0]/Q[35:0]).

It employs dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to align data valid windows. The on-chip PLL ensures precise DDR timing placement, and DOFF pin configures read latency between 1 cycle (LOW) and 1.5 cycles (HIGH).

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density18 Mbit (512K × 36)
Max Clock Frequency333 MHz - enables 666 MT/s DDR throughput per port
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Core Supply1.8 V ±0.1 V - defines internal logic voltage and power integrity margin
I/O Supply Range1.4 V to 1.8 V - supports HSTL-18 and compatible 1.5 V systems
Burst LengthFour-word - reduces address bus toggling frequency by 4× vs. single-word access
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count memory

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Synchronous write data inputsSampled on rising edge of K/K; 36-bit parallel write path
Q[35:0]Synchronous read data outputsDriven on rising edge of C/C; full-width output for burst reads
A[16:0]Multiplexed address inputsLatched on rising edge of K; 17 bits support 512K depth
BWS[3:0]Byte write select (active LOW)Enables selective 8-bit writes: BWS0→D[8:0], BWS1→D[17:9], BWS2→D[26:18], BWS3→D[35:27]
K, KInput clocks for write/read address & dataRising-edge-triggered; K used for address latching, K for data sampling
C, COutput clocks for read dataDrive Q[35:0]; aligned with CQ/CQ for source-synchronous capture
CQ, CQEcho clocksCopy of C/C with matched trace delay; simplify high-speed FPGA/ASIC data capture
DOFFRead latency mode controlHIGH → 1.5-cycle latency; LOW → 1-cycle latency; sets pipeline depth
VDD, VDDQ, VSSPower and ground terminalsVDD = 1.8 V core; VDDQ = 1.4–1.8 V I/O; dedicated VSS balls ensure signal integrity
ZQImpedance calibration referenceConnects to 240 Ω ±1% resistor to ground for HSTL output driver tuning

Key Features

FeatureDesign Value
Separate read/write DDR portsEnables true concurrent read+write without arbitration or bus turnaround overhead
Four-word burst architectureReduces address bus switching rate by 75%, lowering EMI and routing complexity
Echo clock (CQ/CQ) supportEliminates need for board-level clock-data skew compensation in >300 MHz systems
Programmable read latency (DOFF)Allows system-level trade-off between latency and timing closure: 1-cycle for low-latency apps, 1.5-cycle for tighter setup margins
HSTL-18-compatible variable driveConfigurable output strength matches PCB trace impedance (typically 50 Ω), minimizing reflections

Applications

Network Packet BufferingHigh-Speed Test Equipment Memory

Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet headers and payloads in switch ASICs.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with zero-turnaround concurrent access.

Use Value: 666 MT/s per port sustains full-duplex 24 Gbps data flow with deterministic 1-cycle latency for header lookup.

Use Scenario: Real-time waveform capture and pattern replay in automated test equipment (ATE) with >1 GHz sampling.

IC Role / Device Role / Timing Role: High-throughput memory buffer interfacing directly to FPGA-based pattern generators and comparators.

Use Value: Echo clocks (CQ/CQ) enable reliable source-synchronous capture at 333 MHz, eliminating complex deskew circuitry.

Telecom Baseband ProcessingDefense Radar Signal Processing

Use Scenario: Inter-stage buffering between FFT engines and channelizers in LTE/5G baseband units.

IC Role / Device Role / Timing Role: Low-latency, burst-oriented memory for streaming complex IQ samples between processing blocks.

Use Value: Four-word burst reduces address bus activity, easing timing closure on dense FPGA-to-SRAM interfaces.

Use Scenario: Pulse-Doppler radar front-end data buffering where deterministic latency and radiation tolerance are critical.

IC Role / Device Role / Timing Role: Radiation-hardened-adjacent SRAM for real-time ADC sample storage prior to DSP.

Use Value: 1.8 V core + HSTL I/O delivers lower dynamic power than 3.3 V alternatives while maintaining speed for pulse timing fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG10 ns access time, 165-ball FBGA, but only 333 MHz max clock; no DOFF latency selectionFixed 1-cycle latency limits timing margin flexibility in high-skew layoutsPrefer when legacy IDT ecosystem compatibility is required over latency configurability
AS7C331024B-25BINAsynchronous SRAM, 25 ns access, SOJ-44; no DDR, no echo clocks, no burstCannot support concurrent read/write or >100 MHz sustained bandwidthOnly suitable for cost-sensitive, low-speed control-plane buffering where QDR features are unused

Compared with IDT72T3615L10BG and AS7C331024B-25BIN, CY7C1315KV18 uniquely delivers configurable read latency, echo-clock–assisted timing closure, and true concurrent DDR bandwidth-making it optimal for next-generation networking and test equipment demanding both speed and design margin.

Availability

CY7C1315KV18 is available at Aetrix Electronics and suitable for network switch buffering, high-speed ATE memory subsystems, telecom baseband processing, and defense radar signal buffering requiring stable component supply across multi-year production cycles.

Supply support for CY7C1315KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing robustness.

The QDR® II SRAM product line targets high-bandwidth, low-latency memory subsystems in infrastructure equipment-specifically engineered to eliminate bus turnaround and support deterministic DDR timing in FPGA- and ASIC-based systems.

FAQ

What is the function of the DOFF pin on CY7C1315KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle read latency for improved timing margin in high-skew layouts; when LOW, it enables 1-cycle latency for minimal delay in tightly controlled interfaces. This setting directly controls internal pipeline depth and affects tAC and tCO timing parameters.

How does the BWS[3:0] signal operate in CY7C1315KV18?

BWS[3:0] are active-LOW byte write enables controlling 8-bit segments of the 36-bit D[35:0] bus: BWS0 covers D[8:0], BWS1 covers D[17:9], BWS2 covers D[26:18], and BWS3 covers D[35:27]. All are sampled synchronously with K/K clock edges during write operations, allowing partial writes without disturbing unselected bytes.

Can CY7C1315KV18 operate with only one clock domain (K-only)?

Yes-CY7C1315KV18 supports single-clock-domain operation where K is used for both address and data capture, and C is used for output timing. In this mode, C and K must be phase-aligned, and echo clocks (CQ/CQ) remain functional for source-synchronous capture, though C/C skew management becomes more critical.

What is the purpose of the ZQ pin and how should it be terminated?

ZQ is the impedance calibration reference pin for HSTL-18 output drivers. It must be connected to a precision 240 Ω ±1% resistor tied to VSS (ground) to enable on-die termination calibration. Failure to terminate ZQ correctly results in inconsistent output drive strength and signal integrity degradation at 333 MHz.

CY7C1315KV18-250BZI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1315KV18-250BZI FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of CY7C1315KV18-250BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZI is usually 5 days.

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Once your CY7C1315KV18-250BZI order is processed, you will receive an email with the shipment details and tracking number.

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5.How can I obtain technical support or documentation for CY7C1315KV18-250BZI?

For technical support, including CY7C1315KV18-250BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZI requirements.

6.How does Aetrix verify that CY7C1315KV18-250BZI is sourced from the original manufacturer or authorized distributors?

All CY7C1315KV18-250BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZI meets industry standards.

7.What is the process for return or replacement of CY7C1315KV18-250BZI?

All CY7C1315KV18-250BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1315KV18-250BZI part is unused and in its original packaging.

Return procedure for CY7C1315KV18-250BZI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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