Cypress Semiconductor Corp CY7C1315KV18-250BZXI
- Part No.:
- CY7C1315KV18-250BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1315KV18-250BZXI.pdf
- Description:
- IC SRAM 18MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1315KV18-250BZXI from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (40 ns clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports (500 Mbps per data pin), echo clocks (CQ/CQ), and DOFF-selectable 1-cycle or 1.5-cycle read latency. Used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1315KV18-250BZXI datasheet, CY7C1315KV18-250BZXI pinout, CY7C1315KV18-250BZXI application, or CY7C1315KV18-250BZXI equivalent, key selection criteria include concurrent read/write capability, 36-bit wide DDR data interface, FBGA-165 package compatibility, and QDR II timing compliance for backplane interconnects.
Technical Context
The device implements true dual-port synchronous pipelined architecture with independent K/K input clocks for address/data capture and C/C output clocks for data launch, enabling full concurrency without bus turnaround. Its internal 4-array organization (4 × 128K × 36) supports depth expansion via WPS/RPS and byte-level write control using BWS[3:0].
Read operations are synchronized to C/C rising edges with programmable latency (1 or 1.5 cycles via DOFF), while writes use self-timed internal circuitry and support partial writes via active BWS signals. Echo clocks CQ/CQ align with Q[35:0] output timing to simplify high-speed capture at the receiver.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 250 MHz (40 ns period); enables 500 MT/s DDR data rate per pin |
| Core Supply Voltage | 1.8 V ±0.1 V; defines minimum power rail stability requirement for array operation |
| I/O Supply Range | 1.4 V to 1.8 V; supports interoperability with 1.5 V or 1.8 V HSTL-compatible logic |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - impacts pipeline depth in controller design |
| Burst Length | Four-word burst per access; reduces effective address bus toggling frequency by 4× |
| Write Select Granularity | Byte-level via BWS[3:0]; allows partial 36-bit word updates without read-modify-write overhead |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZXI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | Sampled on rising edge of K/K; 36-bit parallel input path for burst writes |
| Q[35:0] | Synchronous read data outputs | Driven on rising edge of C/C; 36-bit DDR output aligned with echo clocks CQ/CQ |
| WPS, RPS | Write/Read Port Select (active LOW) | Enables port-specific transaction initiation; supports depth expansion across multiple devices |
| BWS[3:0] | Byte Write Select (active LOW) | Selects four 9-bit bytes within 36-bit word; enables partial writes without disturbing other bytes |
| K, K | Input clocks for address/data capture | Rising-edge-triggered; used for latching A[16:0], D[35:0], WPS, RPS, BWS[3:0] |
| C, C | Output clocks for data launch | Rising-edge-triggered; controls timing of Q[35:0] and CQ/CQ outputs |
| CQ, CQ | Echo clocks | Phase-aligned with Q[35:0] outputs; simplifies source-synchronous capture in FPGA/ASIC receivers |
| DOFF | Read latency mode select | HIGH → 1.5-cycle latency; LOW → 1-cycle latency; sets controller pipeline staging |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delay; enables simultaneous 36-bit read + 36-bit write per cycle |
| Four-word burst architecture | Reduces required address transition rate by 75% versus single-word addressing |
| DDR interfaces on both ports | Delivers 500 MT/s effective bandwidth per pin at 250 MHz clock, doubling throughput vs. SDR |
| Programmable read latency (DOFF) | Allows controller optimization: 1-cycle for minimal latency, 1.5-cycle for improved timing margin |
| JTAG 1149.1 boundary scan | Enables production test and board-level debug without additional probe points |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Line-rate buffering of 10G/25G Ethernet frames in switch fabric ASICs. IC Role / Device Role / Timing Role: Dedicated QDR II SRAM serving as ingress/egress FIFO with concurrent read/write to sustain full-duplex traffic. Use Value: 36-bit width matches typical SerDes lane grouping; 250 MHz DDR interface meets 18 Gbps aggregate bandwidth requirement. |
Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE). IC Role / Device Role / Timing Role: High-throughput memory buffer interfacing directly to FPGA-based pattern sequencers and DAC/ADC controllers. Use Value: Echo clocks (CQ/CQ) enable deterministic setup/hold timing for >500 MHz sampling clocks in mixed-signal test systems. |
| Telecom Baseband Processing | Defense Radar Signal Processing |
|
Use Scenario: Inter-stage buffering between digital downconverters (DDCs) and channelizers in 5G massive MIMO base stations. IC Role / Device Role / Timing Role: Low-latency, coherent memory for multi-channel IQ sample streaming with strict phase alignment. Use Value: Full data coherency ensures latest written samples are always read; DOFF=LOW configures 1-cycle latency for tight loop timing. |
Use Scenario: Pulse-Doppler radar front-end memory for real-time range-Doppler map accumulation. IC Role / Device Role / Timing Role: Radiation-tolerant (neutron soft error immunity rated) high-bandwidth buffer for FPGA-based beamforming engines. Use Value: 165-ball FBGA package supports conduction-cooled ruggedized modules; 1.8 V core reduces power density in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 100 MHz max frequency (vs. 250 MHz); 512K × 36; 3.3 V I/O; no echo clocks | Limited to lower-bandwidth telecom control planes; lacks source-synchronous timing support | Select only when system clock ≤100 MHz and 3.3 V I/O compatibility is required |
| ISSI IS61QW25636A-250BQI | Same 250 MHz spec, 512K × 36, 1.8 V core, but uses standard QDR II+ timing (no DOFF latency select) | Fixed 1.5-cycle read latency; no 1-cycle mode for ultra-low-latency designs | Prefer when latency flexibility is unnecessary and second-source assurance is prioritized |
Compared with IDT72T3615L10BG and IS61QW25636A-250BQI, CY7C1315KV18-250BZXI uniquely supports configurable 1/1.5-cycle read latency and integrated echo clocks-critical for FPGA-based systems requiring timing closure at 500 MT/s.
Availability
CY7C1315KV18-250BZXI is available at Aetrix Electronics and suitable for network switching, high-speed test instrumentation, telecom baseband processing, and defense radar signal processing requiring stable component supply across extended product lifecycles.
Supply support for CY7C1315KV18-250BZXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with focus on low-power, high-reliability silicon.
CY7C1315KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, concurrent read/write bandwidth in packet infrastructure and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1315KV18-250BZXI?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin; when LOW, it enables 1-cycle latency for minimal pipeline delay. This setting directly affects controller state machine design and must be held stable during operation.
Does CY7C1315KV18-250BZXI support JTAG boundary scan?
Yes, it implements IEEE 1149.1 compliant TAP controller with TDI, TDO, TCK, and TMS pins. Boundary scan supports production testing of solder joints and interconnects in dense FBGA layouts, and is enabled by default unless disabled via instruction register.
How many address bits are required for CY7C1315KV18-250BZXI's 512K × 36 organization?
17 address bits (A[16:0]) are required. The device internally organizes memory as four 128K × 36 arrays, and all address lines are multiplexed for both read and write ports via a single synchronous address bus.
What is the purpose of the BWS[3:0] signals?
BWS[3:0] are active-LOW byte write select signals controlling four 9-bit segments of the 36-bit data bus. When a BWS bit is deasserted, the corresponding 9-bit byte is masked during write operations, preserving existing data in those bits without requiring a read-modify-write sequence.
CY7C1315KV18-250BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1315KV18-250BZXI FAQ
1.How can I place an order for CY7C1315KV18-250BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1315KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1315KV18-250BZXI reliable?
The price and inventory of CY7C1315KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1315KV18-250BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1315KV18-250BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1315KV18-250BZXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1315KV18-250BZXI?
CY7C1315KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1315KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1315KV18-250BZXI?
For technical support, including CY7C1315KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1315KV18-250BZXI requirements.
6.How does Aetrix verify that CY7C1315KV18-250BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1315KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1315KV18-250BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1315KV18-250BZXI?
All CY7C1315KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1315KV18-250BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1315KV18-250BZXI part is unused and in its original packaging.
Return procedure for CY7C1315KV18-250BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1315KV18-250BZXI Tags

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M24C02-WMN6TP
STMicroelectronics
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Microchip Technology

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Microchip Technology

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Microchip Technology

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Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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Microchip Technology

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AT24C08C-STUM-T
Microchip Technology
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