Cypress Semiconductor Corp CY7C1319KV18-250BZXC

Overview

CY7C1319KV18-250BZXC from Cypress Semiconductor is a 18-Mbit (1M × 18) DDR II synchronous pipelined SRAM with four-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 666 MT/s data rate via double-data-rate interface and supports configurable read latency (1-cycle or 1.5-cycle) via DOFF pin. Used in high-bandwidth networking packet buffers and telecom line card memory subsystems.

For engineers reviewing the CY7C1319KV18-250BZXC datasheet, CY7C1319KV18-250BZXC pinout, CY7C1319KV18-250BZXC application, or CY7C1319KV18-250BZXC equivalent, key selection criteria include DDR II timing compliance, echo clock (CQ/CQ) synchronization capability, burst-addressed 18-bit data path, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous pipelined architecture with internal two-bit burst counter driven by A[1:0], enabling sequential four-word reads/writes per address load. All synchronous inputs (R/W, LD, BWS, A) are registered on rising edges of K/K clocks, while outputs (DQ, CQ, CQ) are edge-aligned to C/C or K/K in single-clock mode.

The device integrates a PLL for precise data placement, JTAG 1149.1 test access port, and programmable output impedance via ZQ pin (0.2 × RQ calibration). Read latency is selectable: 1 cycle when DOFF = LOW (DDR I mode), 1.5 cycles when DOFF = HIGH (DDR II mode), with all writes self-timed internally.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, 0.8 mm ball pitch. Thermal pad exposed on underside for enhanced heat dissipation in high-throughput operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with AS7C331024B-250BIN and IS45S16160J-25BLI, CY7C1319KV18-250BZXC uniquely provides DDR II–specific features-configurable latency, echo clocks, and synchronous burst addressing-enabling deterministic, low-jitter memory access essential for telecom and test equipment.

Availability

CY7C1319KV18-250BZXC is available at Aetrix Electronics and suitable for telecom line card design, network packet processing, industrial data logging, and automated test equipment requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1319KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1319KV18 belongs to Cypress's DDR II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in telecom infrastructure and test instrumentation where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C1319KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency: when asserted LOW, the device operates in DDR I mode with 1-cycle read latency; when HIGH, it enters DDR II mode with 1.5-cycle latency. This setting directly controls internal pipeline staging and must be held stable during operation - it is not dynamically switchable mid-burst.

Can CY7C1319KV18-250BZXC operate without external C and C clocks?

Yes - in single-clock mode, the device uses K and K as both input and output clocks. In this configuration, CQ and CQ are generated relative to K/K instead of C/C, and data is driven on K/K rising edges. However, echo clock benefits (flight-time deskew) are lost, and system timing margin decreases accordingly.

How is output impedance calibrated using the ZQ pin?

ZQ connects to an external precision resistor (RQ) tied to ground; the device measures RQ and sets DQ, CQ, and CQ output drive strength to 0.2 × RQ. For standard 50 Ω PCB traces, RQ = 250 Ω. Connecting ZQ directly to VDDQ enables minimum impedance mode (≈20 Ω), but grounding or leaving ZQ floating is prohibited.

Does CY7C1319KV18-250BZXC support byte-write masking across all 18 bits?

No - byte-write is implemented via BWS0 and BWS1 pins, each controlling nine bits: BWS0 governs DQ[8:0], BWS1 governs DQ[17:9]. Both are active-low and sampled synchronously on K/K rising edges. Full 18-bit masking requires asserting both BWS0 and BWS1 HIGH; partial writes affect only the enabled 9-bit segments.