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Cypress Semiconductor Corp CY7C1320KV18-250BZC

Part No.:
CY7C1320KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1320KV18-250BZC.pdf
Description:
IC SRAM 18MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:103

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Product details

Overview

CY7C1320KV18-250BZC from Cypress Semiconductor is a 18-Mbit synchronous DDR II SRAM configured as 512K × 36, operating at 250 MHz with 1.8 V core supply and HSTL I/O. It implements two-word burst reads/writes synchronized to dual K/K input clocks and outputs data on C/C with echo clocks CQ/CQ for precise high-speed capture. Used in network packet buffers and FPGA co-processor memory interfaces requiring low-latency, burst-access SRAM.

For engineers reviewing the CY7C1320KV18-250BZC datasheet, CY7C1320KV18-250BZC pinout, CY7C1320KV18-250BZC application, or CY7C1320KV18-250BZC equivalent, key selection criteria include DDR-II burst timing, 36-bit wide interface, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, HSTL drive strength programmability via ZQ, and 165-ball FBGA (13 × 15 × 1.4 mm) mechanical compatibility.

Technical Context

This device uses a synchronous pipelined architecture with internal burst counter driven by A0, delivering two consecutive 36-bit words per access. All address, control, and write data inputs are registered on rising edges of complementary K/K clocks, enabling precise setup/hold timing at 250 MHz.

Read data is edge-aligned to complementary C/C output clocks, with echo clocks CQ/CQ phase-matched to C/C for receiver-side deskewing. The DOFF pin selects between DDR-I mode (1-cycle latency, R/W HIGH/LOW aligned to K) and DDR-II mode (1.5-cycle latency, staggered R/W sampling), while ZQ enables dynamic output impedance calibration to 0.2×RQ.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization18 Mbit / 512K × 36 - supports 36-bit parallel bus without width expansion
Max Clock Frequency250 MHz - defines maximum sustained burst transfer rate of 1.8 Gbps (36 bits × 250 MHz)
Read Latency1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum clock-to-data delay in controller timing budget
I/O Voltage1.8 V core / 1.4–1.8 V HSTL I/O - compatible with 1.5 V or 1.8 V system rails via VDDQ selection
Burst ModeTwo-word fixed burst - reduces external address bus toggling frequency by 2× versus single-word access
Output DriveVariable HSTL - calibrated via ZQ pin to match 50 Ω trace impedance, minimizing signal reflections
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layouts with thermal pad

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
DQ[35:0]Synchronous bidirectional data bus36-bit DDR data path; inputs sampled on K/K rising edges, outputs driven on C/C rising edges with echo clocks CQ/CQ
K, KComplementary input clocksPrimary timing reference for all synchronous inputs; rising edges latch address, R/W, LD, BWS
C, CComplementary output clocksReference for read data output timing; used with CQ/CQ to compensate board flight time skew
CQ, CQEcho clocksFree-running copies of C/C, phase-aligned to Q[35:0] edges-enables source-synchronous capture at controller
DOFFDDR mode selectConfigures read latency: LOW = DDR-I (1-cycle), HIGH = DDR-II (1.5-cycle) for timing margin trade-off
ZQImpedance calibration inputConnects to external resistor to ground; sets output driver strength to 0.2×RQ for 50 Ω line matching
BWS[3:0]Byte write enableFour active-low signals controlling 9-bit byte lanes; allows partial writes without read-modify-write overhead
LDLoad strobeActive-low synchronous command latch; initiates each burst transaction when asserted with R/W

Key Features

FeatureDesign Value
Two-word burst architectureHalves effective address bus toggle rate and simplifies controller address generation logic
Programmable output impedance (ZQ)Enables on-die calibration to match PCB trace impedance, reducing signal integrity issues at 500 Mbps per pin
DOFF-selectable read latencyAllows system-level timing optimization: 1-cycle for minimal latency, 1.5-cycle for relaxed setup margins
Echo clocks CQ/CQEliminates need for separate capture clock routing; enables deterministic data sampling across multiple SRAMs
HSTL-compatible I/OSupports both 1.5 V and 1.8 V VDDQ rails, easing integration into mixed-voltage FPGA or ASIC memory subsystems

Applications

Network Packet BufferingFPGA Co-Processor Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controller's 36-bit DDR bus.

Use Value: Two-word burst and echo clocks ensure deterministic frame storage/retrieval at line rate (10 Gbps+), avoiding FIFO overflow under bursty traffic.

Use Scenario: Off-chip cache for FPGA-based digital signal processors performing real-time video filtering.

IC Role / Device Role / Timing Role: Burst-access scratchpad memory holding intermediate pixel blocks during pipeline processing.

Use Value: 1.5-cycle DDR-II latency mode provides timing margin for complex FPGA logic paths while sustaining >1.5 GB/s bandwidth.

Telecom Line Card MemoryIndustrial Motion Controller Buffer

Use Scenario: Holding time-division multiplexed (TDM) voice channel samples in base station line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free sample buffering between framer and DSP cores.

Use Value: HSTL I/O and ZQ calibration maintain signal integrity across long backplane traces, supporting stable operation at -40°C to +85°C.

Use Scenario: Buffering encoder position data and motion profile commands in servo drive controllers.

IC Role / Device Role / Timing Role: Deterministic-access memory for real-time closed-loop control loops requiring sub-microsecond latency.

Use Value: DOFF-configurable latency allows tuning to match PLC scan cycle timing, ensuring command execution within 100 ns jitter window.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C331024B-25BINAsynchronous 32Mbit SRAM, no DDR, no burst, 15 ns access, 3.3 V onlyLacks echo clocks, burst, and DDR timing; requires external address sequencing logicSelect only if system lacks DDR clock infrastructure and tolerates higher latency
IS61WV102432BLL-10TLISynchronous 32Mbit SRAM, single-data-rate, 10 ns cycle, 3.3 V core/I/ONo C/C or CQ/CQ; no ZQ calibration; lower bandwidth (320 MB/s vs. 1.8 GB/s)Choose for cost-sensitive designs where 250 MHz DDR timing and impedance control are unnecessary

Compared with AS7C331024B-25BIN and IS61WV102432BLL-10TLI, CY7C1320KV18-250BZC delivers 5.6× higher bandwidth via DDR-II burst and eliminates board-level timing closure challenges through echo clocks and programmable drive strength-critical for 10G+ systems.

Availability

CY7C1320KV18-250BZC is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor caching, telecom line card memory, and industrial motion controller buffering requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for CY7C1320KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1320KV18 belongs to Cypress's DDR II SRAM product line, designed specifically for high-throughput, low-latency memory subsystems in networking, test equipment, and FPGA-accelerated computing where deterministic burst access and signal integrity at 500 Mbps/pin are essential.

FAQ

What is the function of the DOFF pin on CY7C1320KV18-250BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when tied LOW, the device operates in DDR-I mode with 1-cycle read latency; when tied HIGH, it enters DDR-II mode with 1.5-cycle latency. This selection affects controller timing constraints and setup/hold margins but does not alter burst depth, data width, or clocking architecture.

How does ZQ calibration work on this SRAM?

ZQ connects to an external precision resistor (typically 240 Ω) to ground, enabling on-die calibration of HSTL output drivers to achieve 50 Ω impedance matching. The device measures RQ and adjusts internal current sources so that DQ[35:0], CQ, and CQ output impedances equal 0.2 × RQ. Direct connection to VDDQ enables minimum impedance mode.

Can CY7C1320KV18-250BZC operate with only K clock (no K, C, or C)?

Yes-single-clock mode is supported: K serves as both input and output clock reference, with K, C, and C left unconnected or tied to VDD/VSS per datasheet guidelines. In this mode, data is latched and driven on K edges only, eliminating need for differential clock routing but reducing maximum achievable bandwidth and skew compensation capability.

What is the purpose of the BWS[3:0] pins in 36-bit configuration?

BWS[3:0] are active-low byte write select signals controlling four independent 9-bit lanes of the 36-bit data bus. BWS0–BWS3 correspond to D[8:0], D[17:9], D[26:18], and D[35:27], respectively. Asserting only selected BWS lines enables partial writes without read-modify-write cycles, preserving unselected byte lanes' contents.

CY7C1320KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1320KV18-250BZC FAQ

1.How can I place an order for CY7C1320KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1320KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1320KV18-250BZC reliable?

The price and inventory of CY7C1320KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1320KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1320KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1320KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1320KV18-250BZC?

CY7C1320KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1320KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1320KV18-250BZC?

For technical support, including CY7C1320KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1320KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1320KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1320KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1320KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1320KV18-250BZC?

All CY7C1320KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1320KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1320KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1320KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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