Cypress Semiconductor Corp CY7C1351G-133AXC

Overview

CY7C1351G-133AXC from Infineon Technologies (formerly Cypress) is a 4-Mbit (128K × 36) synchronous flow-through SRAM with NoBL™ architecture, designed for zero-wait-state, back-to-back read/write operations in high-speed memory subsystems. It operates at 133 MHz with 6.5 ns clock-to-output delay, supports 2.5 V/3.3 V I/O (VDDQ), and features byte write capability, linear/interleaved burst modes, and synchronous self-timed writes.

For engineers reviewing the CY7C1351G-133AXC datasheet, CY7C1351G-133AXC pinout, CY7C1351G-133AXC application, or CY7C1351G-133AXC equivalent, key selection criteria include its 100-pin TQFP package, 36-bit common I/O width, ZZ sleep mode, registered synchronous interface, and compatibility with ZBT™-based memory controllers in networking and telecom line cards.

Technical Context

The device implements a fully pipelined, synchronous interface with all inputs registered on the rising edge of CLK and qualified by CEN. Its NoBL™ logic eliminates bus latency by enabling consecutive read/write cycles without wait states - data transfers occur on every clock cycle, including immediate transitions from write to read.

Burst addressing is controlled by ADV/LD and MODE pins: ADV/LD advances the internal 2-bit counter (A[1:0]), while MODE selects linear or interleaved order. Write operations use synchronous self-timed control with BW[A:D] and WE, and outputs are automatically tristated during write data capture regardless of OE state.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IDT72V2115L133PF and IS61WV102436BLL-133TQLI, CY7C1351G-133AXC uniquely combines NoBL™ zero-wait-state operation, integrated ZZ sleep, and single-clock synchronous simplicity - making it optimal for latency-critical, power-aware embedded memory subsystems without QDR complexity.

Availability

CY7C1351G-133AXC is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, high-speed line card memory, and real-time video frame buffering requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1351G-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power systems, sensors, and memory solutions for industrial, automotive, and communications markets.

CY7C1351G belongs to Infineon's legacy Cypress synchronous SRAM product line, engineered specifically for high-throughput, low-latency memory subsystems in networking, telecom, and real-time signal processing equipment.

FAQ

What is the function of the ZZ pin, and how must it be connected?

The ZZ pin is an asynchronous sleep input that places the device in low-power mode while preserving data integrity. Per documented errata, Pin 64 (ZZ) must be externally connected to ground - it cannot be left floating due to internal pull-down limitations. Failure to ground ZZ may cause unpredictable sleep behavior or increased standby current.

How does the CY7C1351G-133AXC handle burst address generation?

Burst addressing is managed internally using a 2-bit counter driven by A[1:0] and controlled by ADV/LD. When ADV/LD is HIGH, the counter increments on each clock; when LOW, a new address is loaded. The MODE pin selects linear (A[1:0] = 00→01→10→11) or interleaved (00→01→11→10) sequence - both wrap on overflow without external intervention.

Can the CY7C1351G-133AXC operate with mixed VDD (core) and VDDQ (I/O) voltages?

Yes - VDD (core) is fixed at 3.3 V, while VDDQ (I/O) supports either 2.5 V or 3.3 V. This allows direct interfacing with 2.5 V FPGAs or 3.3 V ASICs without level shifters. The device guarantees full AC/DC specifications across both VDDQ options, with separate I/O drive strength calibration per voltage.

Is the CY7C1351G-133AXC pin-compatible with standard ZBT™ SRAMs?

Yes - it is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT™ devices (e.g., IDT72V2115). All control, address, data, and power pins match ZBT™ 100-pin TQFP layouts, enabling drop-in replacement in existing designs without PCB revision, provided timing margins accommodate the tighter 6.5 ns tCDV.