Cypress Semiconductor Corp CY7C1361C-133AXC

Overview

CY7C1361C-133AXC from Infineon Technologies (formerly Cypress) is a 9-Mbit synchronous flow-through SRAM with 256K × 36 organization, designed for high-speed cache and buffer interfacing in Pentium-class microprocessor systems. It operates at 133 MHz, delivers 6.5 ns clock-to-output delay, supports dual VDDQ (2.5 V/3.3 V), and features Intel Pentium-compatible interleaved/linear burst addressing via MODE pin.

For engineers reviewing the CY7C1361C-133AXC datasheet, CY7C1361C-133AXC pinout, CY7C1361C-133AXC application, or CY7C1361C-133AXC equivalent, key selection criteria include burst sequence control (MODE), synchronous self-timed write timing, JTAG boundary-scan support (IEEE 1149.1), and compatibility with 3.3 V core / 2.5 V I/O mixed-supply systems.

Technical Context

The device implements a synchronous, clock-driven architecture where all address, data, and control inputs (except OE and ZZ) are registered on the rising edge of CLK. Burst addressing is managed by a 2-bit on-chip counter that auto-increments from the initial address captured by ADSP or ADSC strobes.

It supports two distinct burst modes-interleaved (MODE = HIGH) and linear (MODE = LOW)-and provides separate processor (ADSP) and controller (ADSC) address strobes to enable flexible system-level bus arbitration between CPU and cache controller.

Key Specifications

Pinout & Package

Package: Pb-free 100-pin TQFP (14 × 20 × 1.4 mm), 3-chip-enable variant (A version), RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous burst SRAM applications.

Compared with IS61WV102432BLL-133TQLI and AS7C31026B-133BIN, the CY7C1361C-133AXC uniquely combines Pentium-compatible interleaved burst, dual-VDDQ flexibility, IEEE 1149.1 testability, and ZZ sleep - making it optimal for certified, high-reliability, mixed-voltage cache subsystems.

Availability

CY7C1361C-133AXC is available at Aetrix Electronics and suitable for high-speed CPU cache, network packet buffering, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for CY7C1361C-133AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and maintains its high-performance memory portfolio, including synchronous SRAMs engineered for deterministic timing and system-level integration.

This device belongs to the Cypress Flow-Through SRAM product line, originally developed for glueless interfacing with Pentium-class microprocessors and optimized for cache, buffer, and FIFO applications demanding sub-7 ns access and burst predictability.

FAQ

What is the function of the MODE pin on CY7C1361C-133AXC?

The MODE pin selects burst address sequencing: HIGH configures interleaved mode (required for Intel Pentium-compatible cache line fills), while LOW enables linear mode. This setting directly controls the on-chip 2-bit counter's increment pattern and must be held stable during burst initiation via ADSP or ADSC.

Can CY7C1361C-133AXC operate with 2.5 V I/O while using 3.3 V core supply?

Yes. The device supports independent VDD (3.3 V ±5%) and VDDQ (2.5 V or 3.3 V) supplies. When VDDQ = 2.5 V, all DQ, DQP, and control outputs (except CLK, ZZ, MODE) comply with 2.5 V LVTTL levels, enabling direct interface to 2.5 V logic without level shifters.

Does CY7C1361C-133AXC support JTAG boundary scan in all package variants?

JTAG (IEEE 1149.1) is supported in the 119-ball BGA (2-CE, with TDO/TDI/TCK/TMS pins) and 165-ball FBGA packages. The 100-pin TQFP variant does not include dedicated JTAG pins and therefore lacks boundary-scan functionality per the datasheet pinout diagrams.

How does the ZZ (sleep) mode affect timing behavior during wake-up?

ZZ mode reduces standby current to ≤40 mA. Exit from ZZ is synchronous: the first rising CLK edge after ZZ returns HIGH initiates internal recovery; valid data appears on DQ after tHZPX (max 25 ns) and subsequent accesses follow normal timing parameters - no additional initialization delay is required.