My Inquiry
My Account
Cypress Semiconductor Corp CY7C1381D-133AXI
- Part No.:
- CY7C1381D-133AXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1381D-133AXI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,062
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1381D-133AXI from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous flow-through SRAM with 133 MHz bus operation, 6.5 ns clock-to-output delay, 3.3 V core supply (VDD), 2.5 V/3.3 V I/O supply (VDDQ), and JEDEC-standard Pb-free 100-pin TQFP packaging. It serves as high-speed cache or buffer memory in Pentium-class microprocessor systems requiring burst-mode interfacing with minimal glue logic.
For engineers reviewing the CY7C1381D-133AXI datasheet, CY7C1381D-133AXI pinout, CY7C1381D-133AXI application, or CY7C1381D-133AXI equivalent, key selection criteria include synchronous burst timing (interleaved/linear), dual-voltage I/O support, ZZ sleep mode behavior, and compatibility with ADSP/ADSC address strobe protocols in embedded computing and networking subsystems.
Technical Context
The CY7C1381D-133AXI implements a synchronous flow-through architecture with a 2-bit on-chip burst counter that auto-increments addresses on ADV assertion, supporting Intel Pentium–compatible interleaved or linear burst sequences selected via the MODE pin. All address, data, and control inputs (CE1/CE2/CE3, BWx, BWE, GW, ADSP, ADSC) are registered on the rising edge of CLK.
Asynchronous signals OE and ZZ operate independently of CLK: OE enables tristate output control during read cycles, while ZZ places the device in low-power sleep with data retention when driven HIGH. The device supports separate processor (ADSP) and controller (ADSC) address strobes, enabling flexible system-level memory arbitration between CPU and cache controller.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 133 MHz - defines maximum sustained burst throughput without wait states |
| Access Time (tCO) | 6.5 ns - guaranteed clock-to-output delay for timing-critical read paths |
| VDD Supply | 3.3 V ± 0.3 V - core voltage rail powering internal logic and array |
| VDDQ Supply | 2.5 V or 3.3 V - selectable I/O voltage for interface compatibility with mixed-voltage SoCs |
| Burst Mode | User-selectable interleaved or linear via MODE pin - matches Pentium or custom controller addressing schemes |
| Sleep Mode | ZZ pin active HIGH - reduces standby current to <70 mA while preserving data integrity |
Pinout & Package
Package: JEDEC-standard Pb-free 100-pin Thin Quad Flat Package (TQFP), 14 mm × 20 mm × 1.4 mm body, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0, A1, A[2:18] | Synchronous address input | Sampled on CLK rising edge when ADSP/ADSC active; A[1:0] load 2-bit burst counter |
| CLK | System clock input | Edge-triggered master timing reference for all synchronous registers and burst advancement |
| ADSP / ADSC | Address strobe (processor / controller) | Qualifies address capture; ADSP takes priority when both asserted - enables dual-bus arbitration |
| ADV | Burst address advance | Asserted LOW on CLK edge to increment internal burst counter - controls sequential access timing |
| OE | Asynchronous output enable | Tristates DQ/DQP outputs when HIGH; masked during first read clock after deselection |
| ZZ | Asynchronous sleep control | Active HIGH - forces non-time-critical sleep; requires external ground connection per errata (Pin 64) |
| DQ[A:D], DQP[A:D] | Bidirectional data/parity I/O | 36-bit data + 4-bit parity; direction controlled by OE; automatically tristated during writes |
| CE1, CE2, CE3 | Synchronous chip enables | CE1/CE3 active LOW, CE2 active HIGH - support depth expansion with multiple SRAMs |
| BWA–BWD, BWE, GW | Byte write controls | BWE enables byte writes; BWx selects 4×8-bit lanes; GW overrides for full-word writes |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through synchronous architecture | Eliminates pipeline stalls in burst reads - data appears on DQ pins one clock after address capture |
| User-selectable burst sequence | MODE pin configures interleaved (Pentium-compatible) or linear addressing - no external logic required |
| Dual-voltage I/O interface | VDDQ supports 2.5 V or 3.3 V operation - enables direct connection to legacy or modern ASIC/FPGA I/O banks |
| IEEE 1149.1 JTAG boundary scan | Enables board-level testability and interconnect verification - disabled by default, configurable via TAP |
| ZZ sleep mode with data retention | Reduces power during idle cycles while maintaining memory state - critical for thermal management in dense compute modules |
Applications
| High-Performance CPU Cache Buffer | Network Packet Buffering Engine |
|---|---|
Use Scenario: L2 cache buffer between Pentium-class microprocessor and main memory subsystem. IC Role / Device Role / Timing Role: Synchronous flow-through SRAM providing zero-wait-state burst reads at 133 MHz with 6.5 ns tCO. Use Value: Enables 2-1-1-1 access pattern matching CPU burst expectations - eliminates glue logic and improves instruction fetch bandwidth. | Use Scenario: Temporary storage for packet headers and payload fragments in Gigabit Ethernet switch ASICs. IC Role / Device Role / Timing Role: High-speed buffering element accepting interleaved bursts from MAC controllers and forwarding to switching fabric. Use Value: Dual-voltage I/O (2.5 V VDDQ) interfaces directly with 2.5 V PHY interfaces while 3.3 V VDD powers robust core logic. |
| Industrial PLC Real-Time Data Log | Medical Imaging Frame Buffer |
Use Scenario: Cyclic data acquisition buffer in programmable logic controller firmware executing deterministic scan cycles. IC Role / Device Role / Timing Role: Synchronous SRAM storing timestamped sensor values with guaranteed 133 MHz burst write capability. Use Value: ZZ sleep mode reduces average power during idle scan intervals - extends thermal margin in sealed enclosures. | Use Scenario: Intermediate frame storage between image sensor interface and JPEG compression engine in portable ultrasound devices. IC Role / Device Role / Timing Role: 512K × 36 configuration provides 18-bit pixel depth support with parity protection for diagnostic reliability. Use Value: Built-in parity I/O (DQP[A:D]) enables real-time error detection on critical imaging data - meets IEC 62304 safety requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS61WV102432BLL-133TQLI | 1024K × 32 organization, 3.3 V only VDDQ, no ZZ pin, same 133 MHz speed grade | Lacks sleep mode and dual-voltage I/O - unsuitable for power-constrained or mixed-voltage designs | Select when system uses fixed 3.3 V I/O and does not require low-power idle states |
| MT55LSD25636DZ-133:J | 256K × 36 density, 1.8 V VDDQ option, integrated termination resistors, no ADSC/ADSP strobes | Lower density and simplified control interface - targets cost-sensitive, non-Pentium-compatible systems | Select when board space is constrained and burst protocol is linear-only with single address strobe |
Compared with IS61WV102432BLL-133TQLI and MT55LSD25636DZ-133:J, the CY7C1381D-133AXI uniquely supports both interleaved/linear burst modes, dual-voltage I/O, and ZZ sleep - making it optimal for legacy x86-derivative embedded systems requiring design continuity and thermal headroom.
Availability
CY7C1381D-133AXI is available at Aetrix Electronics and suitable for high-speed CPU cache buffers, network packet buffering engines, and industrial PLC real-time data loggers requiring stable component supply across extended product lifecycles.
Supply support for CY7C1381D-133AXI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for embedded systems, with expertise in SRAM, NOR Flash, and PSoC architectures.
The CY7C1381D belongs to Cypress's synchronous flow-through SRAM product line, engineered specifically for seamless integration with Intel Pentium–class processors and cache controllers in compute- and networking-intensive applications.
FAQ
What is the required external connection for the ZZ pin on CY7C1381D-133AXI?
The ZZ pin (Pin 64 in 100-pin TQFP) must be externally connected to ground for normal operation, as specified in the device errata (Document 38-05544 Rev. *V, page 32). Leaving it floating or driving it HIGH will place the device in sleep mode, disrupting memory access. The internal pull-down ensures safe default behavior but does not eliminate the grounding requirement.
Can CY7C1381D-133AXI operate with 2.5 V VDDQ while using 3.3 V VDD?
Yes - the device is explicitly rated for 3.3 V core supply (VDD) and independent 2.5 V or 3.3 V I/O supply (VDDQ), per the "Electrical Characteristics" table on page 20 of the datasheet. This dual-voltage capability allows direct interfacing with 2.5 V FPGA I/O banks while maintaining robust 3.3 V internal logic performance.
How does the CY7C1381D-133AXI handle simultaneous ADSP and ADSC assertion?
When both ADSP and ADSC are asserted LOW, the device recognizes only ADSP - ADSC is ignored. This priority hierarchy is defined in the Functional Description section (page 8) and ensures deterministic address capture in systems where both processor and controller may attempt concurrent access.
Is JTAG boundary scan functional and recommended for CY7C1381D-133AXI?
No - per errata note #4 (page 32), JTAG functionality is not guaranteed, and testing must be performed in BYPASS mode. The IEEE 1149.1 circuitry is present but unvalidated; designers should rely on functional testing rather than JTAG for production verification.
CY7C1381D-133AXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.5 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1381D-133AXI FAQ
1.How can I place an order for CY7C1381D-133AXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1381D-133AXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1381D-133AXI reliable?
The price and inventory of CY7C1381D-133AXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1381D-133AXI is usually 5 days.
3.What payment methods are accepted for CY7C1381D-133AXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1381D-133AXI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1381D-133AXI?
CY7C1381D-133AXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1381D-133AXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1381D-133AXI?
For technical support, including CY7C1381D-133AXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1381D-133AXI requirements.
6.How does Aetrix verify that CY7C1381D-133AXI is sourced from the original manufacturer or authorized distributors?
All CY7C1381D-133AXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1381D-133AXI meets industry standards.
7.What is the process for return or replacement of CY7C1381D-133AXI?
All CY7C1381D-133AXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1381D-133AXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1381D-133AXI part is unused and in its original packaging.
Return procedure for CY7C1381D-133AXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1381D-133AXI Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
