Cypress Semiconductor Corp CY7C1386KV33-200AXC

Overview

CY7C1386KV33-200AXC from Cypress Semiconductor is a 18-Mbit pipelined synchronous SRAM configured as 512K × 36, operating at 200 MHz with 3.3 V core (VDD) and 2.5/3.3 V I/O (VDDQ) supplies, 3 ns clock-to-output delay, and registered synchronous inputs/outputs - deployed in high-speed CPU cache subsystems requiring deterministic burst access.

For engineers reviewing the CY7C1386KV33-200AXC datasheet, CY7C1386KV33-200AXC pinout, CY7C1386KV33-200AXC application, or CY7C1386KV33-200AXC equivalent, key selection criteria include pipelined DCD timing architecture, dual-address-strobe support (ADSP/ADSC), interleaved/linear burst mode selectability via MODE pin, and depth-expansion capability without wait states.

Technical Context

This SRAM implements a two-bit synchronous wraparound burst counter, clocked by CLK's rising edge, with address registration triggered by either ADSP (processor strobe) or ADSC (controller strobe). Burst advancement is controlled by ADV, and burst sequence type (interleaved or linear) is latched from the MODE pin at initialization.

All synchronous inputs - including A[1:0], CE1/CE2/CE3, BWA–BWD, BWE, GW, OE, ADSP, ADSC, ADV, and CLK - are registered on the rising edge. Asynchronous OE and ZZ enable immediate output tristate and sleep entry, respectively, independent of clock timing.

Key Specifications

Pinout & Package

Package: 100-pin JEDEC-standard Pb-free TQFP (14 × 20 × 1.4 mm), RoHS-compliant, thermal resistance θJA = 35 °C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IS61WV102436BLL-200BLI and MT55LSD256K36P-200:G, the CY7C1386KV33-200AXC uniquely combines 512K × 36 density, dual-strobe support, VDDQ voltage flexibility, and ZZ sleep - making it the only option for high-reliability, mixed-voltage, burst-protocol-diverse cache subsystems.

Availability

CY7C1386KV33-200AXC is available at Aetrix Electronics and suitable for high-speed CPU cache, network packet buffering, industrial motion control, and avionics data acquisition requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1386KV33-200AXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for industrial, automotive, and communications infrastructure.

The CY7C1386KV33 belongs to Cypress's high-speed synchronous SRAM product line, engineered specifically for deterministic-burst, low-latency cache and buffer applications in real-time embedded systems.

FAQ

What is the function of the MODE pin on CY7C1386KV33-200AXC?

The MODE pin selects burst address sequencing: logic HIGH configures linear burst (0,1,2,3…), logic LOW configures interleaved burst (0,2,4,6… then 1,3,5,7…). It is sampled once at power-up or reset and remains latched until next reset - no runtime reconfiguration is supported.

Can CY7C1386KV33-200AXC operate with VDDQ = 2.5 V while VDD = 3.3 V?

Yes. The device fully supports independent 3.3 V core (VDD) and 2.5 V I/O (VDDQ) operation per JESD8-5 specifications. All I/O pins (DQx, DQP x, BWA–BWD, etc.) are 2.5 V tolerant and drive compliant levels when VDDQ = 2.5 V, enabling direct interface to 2.5 V logic families.

How does the double-cycle deselect feature improve system performance?

When CE1/CE2/CE3 transition to deselect state, outputs remain valid for one additional clock cycle before tristating - allowing adjacent SRAMs in a depth-expanded bank to overlap deselect timing. This eliminates inter-bank wait states and sustains continuous 200 MHz burst throughput across multi-chip configurations.

Is ZZ sleep mode compatible with asynchronous OE assertion during active operation?

Yes. ZZ sleep and OE are fully independent: OE can be asserted HIGH to tristate outputs at any time, even while ZZ = LOW (active mode), and ZZ can be asserted HIGH to enter sleep while OE remains LOW - though outputs will tristate upon sleep entry regardless of OE state.