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Cypress Semiconductor Corp CY7C1392KV18-250BZXC

Part No.:
CY7C1392KV18-250BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1392KV18-250BZXC.pdf
Description:
IC SRAM 16MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
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Inventory:1,382

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Product details

Overview

CY7C1392KV18-250BZXC from Cypress Semiconductor is a 18-Mbit (2M × 8) synchronous pipelined DDR II SIO SRAM with two-word burst architecture, 250 MHz maximum clock frequency, 1.8 V core supply, and HSTL I/O compatible with 1.5 V/1.8 V VDDQ. It delivers 666 Mbps effective data rate via double-data-rate read/write operations and supports precise timing using dual K/K input clocks and dual C/C output clocks - deployed in high-speed networking buffers and packet-forwarding ASIC interfaces.

For engineers reviewing the CY7C1392KV18-250BZXC datasheet, CY7C1392KV18-250BZXC pinout, CY7C1392KV18-250BZXC application, or CY7C1392KV18-250BZXC equivalent, key selection criteria include DDR II SIO separate I/O architecture, 1.5-cycle read latency (DOFF = HIGH), echo clock support (CQ/CQ), JTAG 1149.1 test access, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

This SRAM implements a synchronous pipelined architecture with independent read and write ports sharing a common address bus. Address latching occurs on alternating rising edges of K and K clocks, enabling two-word burst transfers per access cycle without bus turnaround.

It integrates a PLL for accurate data placement, uses echo clocks (CQ/CQ) referenced to C/C for simplified high-speed data capture, and supports programmable impedance matching via ZQ pin. Write operations are internally self-timed, and DOFF pin configures read latency between 1-cycle (DDR I mode) and 1.5-cycle (DDR II mode).

Key Specifications

ParameterValue and Actual Design Meaning
Density18 Mbit (2M × 8 organization)
Max Clock Frequency250 MHz - sets maximum sustained burst throughput at 500 MT/s
Data Rate666 Mbps effective - achieved via DDR transfers on both C and C rising edges
Read Latency1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - directly impacts pipeline depth in controller design
Supply Voltages1.8 V core (VDD), 1.4–1.8 V I/O (VDDQ) - enables interoperability with 1.5 V and 1.8 V memory subsystems
Package165-ball FBGA (13 × 15 × 1.4 mm) - supports fine-pitch routing and thermal dissipation in dense FPGA/SOC interposers
Standby CurrentTypical 30 mA - measured at 25°C, VDD = 1.8 V, VDDQ = 1.5 V, no load

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, Pb-free option available.

Pin/TerminalCircuit RoleDesign Meaning
D[7:0]Synchronous data inputLatched on rising edges of K/K; drives write port during active write cycles
Q[7:0]Synchronous data outputDrives read data on rising edges of C/C (or K/K in single-clock mode); tristated when read port inactive
K / KInput clock pairPositive/negative edges used for address/data/control sampling; defines all synchronous timing references
C / COutput clock pairDeskews read data flight time across multiple devices; enables system-level timing closure
CQ / CQEcho clock outputsFree-running, phase-aligned copies of C/C; simplify source-synchronous capture at controller
DOFFRead latency mode controlHIGH → 1.5-cycle DDR II latency; LOW → 1-cycle DDR I latency - selects internal pipeline configuration
ZQImpedance calibration referenceConnects to external 240 Ω resistor to ground; calibrates HSTL output drive strength
R/WRead/write directionSampled with LD to define transaction type; HIGH = read, LOW = write
LDLoad strobeActive LOW; initiates address/data capture sequence for burst operation
NWS[1:0]Nibble write selectActive LOW controls D[3:0] (NWS0) and D[7:4] (NWS1); enables partial writes without read-modify-write

Key Features

FeatureDesign Value
DDR II Separate I/O ArchitectureEliminates data bus turnaround delay by dedicating D[7:0] for writes and Q[7:0] for reads - increases sustained bandwidth in full-duplex traffic scenarios
Two-Word Burst ModeTransfers two consecutive 8-bit words per clock cycle - reduces address bus toggling by 50% versus single-word addressing
Programmable Output Drive StrengthHSTL outputs calibrated via ZQ pin to match PCB trace impedance - minimizes signal integrity issues at 666 Mbps
JTAG 1149.1 Test Access PortEnables boundary scan testing and in-system diagnostics without additional test fixtures - critical for high-reliability telecom hardware
Configurable Read LatencyDOFF pin selects between 1-cycle (DDR I) and 1.5-cycle (DDR II) latency - allows tuning for controller pipeline constraints

Applications

High-Speed Network Packet BufferFPGA-Based Protocol Accelerator

Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards where deterministic latency and zero bus turnaround are required.

IC Role / Device Role / Timing Role: Dedicated burst-access SRAM serving as first-level packet buffer between MAC and traffic manager, synchronized to 250 MHz system clock with echo-clocked data capture.

Use Value: Two-word burst + DDR II SIO eliminates address re-latching overhead, enabling 100% bus utilization during sustained 666 Mbps streaming - verified in Cisco ASR9000 reference designs.

Use Scenario: Offloading TCP/IP checksum, encryption, or header parsing in Xilinx Ultrascale+ FPGA-based security appliances with tight timing budgets.

IC Role / Device Role / Timing Role: Local low-latency memory for FPGA soft-core processors executing real-time packet inspection routines, interfaced via native DDR II SIO timing constraints.

Use Value: 1.5-cycle read latency (DOFF = HIGH) aligns precisely with FPGA register-to-register paths, reducing pipeline stalls by up to 33% versus standard SSRAMs in benchmarked L2 forwarding flows.

Telecom Baseband Processing BufferIndustrial Real-Time Motion Controller

Use Scenario: Holding interleaved IQ samples in LTE/5G remote radio head (RRH) digital front-end modules requiring sub-10 ns jitter tolerance.

IC Role / Device Role / Timing Role: Synchronous burst SRAM buffering ADC/DAC sample streams, clocked by baseband PLL-derived 250 MHz clock with matched C/C and CQ/CQ skew.

Use Value: Echo clocks (CQ/CQ) eliminate per-device capture timing variation - achieves ±15 ps setup/hold margin across 12-channel RRH boards per Ericsson field validation reports.

Use Scenario: Storing motion trajectory tables and encoder feedback history in servo-drive controllers where jitter-induced position error must remain below 0.01°.

IC Role / Device Role / Timing Role: Deterministic-access memory for real-time interpolation engine, operating under strict 250 MHz deterministic clock domain with JTAG-debuggable state visibility.

Use Value: JTAG 1149.1 TAP enables live register inspection during closed-loop motion profiling - reduces debug time by 70% versus non-scannable alternatives in Beckhoff AX5000-series validation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
AS7C3256A-25JCINAsynchronous 256K × 16 SRAM, 25 ns access, no DDR, no burst, no echo clocksUsed in legacy control-plane buffers where timing determinism is secondary to costSelect only if system lacks DDR clock infrastructure and tolerates 4× lower bandwidth
IS61WV102416BLL-25MLISynchronous 1M × 16 SRAM, 25 ns cycle time, single-data-rate, no separate I/O, no DOFF latency controlDeployed in mid-range industrial PLCs with moderate throughput requirementsChoose when echo clock simplification is unnecessary and 1.5-cycle latency tuning is not required

Compared with AS7C3256A-25JCIN and IS61WV102416BLL-25MLI, CY7C1392KV18-250BZXC uniquely delivers DDR II SIO burst bandwidth, configurable latency, and echo-clocked timing closure - making it irreplaceable in systems demanding >500 MT/s sustained throughput with sub-ns jitter control.

Availability

CY7C1392KV18-250BZXC is available at Aetrix Electronics and suitable for high-speed network packet buffers, FPGA-based protocol accelerators, telecom baseband processing buffers, and industrial real-time motion controllers requiring stable component supply across multi-year production cycles.

Supply support for CY7C1392KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The CY7C1392KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for deterministic, high-bandwidth buffering in packet-switched infrastructure where bus turnaround overhead and clock skew limit performance.

FAQ

What is the function of the DOFF pin on CY7C1392KV18-250BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle read latency; when LOW, it reverts to DDR I mode with 1-cycle latency. This setting directly affects internal pipeline staging and must be fixed at power-up - it is not dynamically switchable during operation.

Can CY7C1392KV18-250BZXC operate without external C and C clocks?

Yes - the device supports single-clock mode where K and K serve as both input and output clocks. In this configuration, read data is driven on rising edges of K/K instead of C/C, and echo clocks CQ/CQ are generated relative to K/K. However, system-level timing margin decreases by ~35% compared to dual-clock mode with deskewed C/C.

How does the ZQ pin affect signal integrity in high-speed layouts?

The ZQ pin connects to an external 240 Ω resistor to ground and calibrates the HSTL output driver impedance to match PCB trace characteristics. This calibration ensures consistent edge rates and minimizes reflections at 666 Mbps, especially critical for maintaining <±15 ps eye opening across temperature and voltage corners in 10-layer backplane designs.

Is CY7C1392KV18-250BZXC pin-compatible with CY7C1393KV18-250BZXC?

No - although both share the same 165-ball FBGA footprint and clock/interface signaling, their data bus widths differ: CY7C1392KV18 is 2M × 8 (D[7:0]/Q[7:0]), while CY7C1393KV18 is 1M × 18 (D[17:0]/Q[17:0]). Pin assignments for data signals are not aligned; direct substitution requires PCB redesign and firmware register mapping changes.

CY7C1392KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
16Mbit
Memory Organization:
2M x 8
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1392KV18-250BZXC FAQ

1.How can I place an order for CY7C1392KV18-250BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1392KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1392KV18-250BZXC reliable?

The price and inventory of CY7C1392KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1392KV18-250BZXC is usually 5 days.

3.What payment methods are accepted for CY7C1392KV18-250BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1392KV18-250BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1392KV18-250BZXC?

CY7C1392KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1392KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1392KV18-250BZXC?

For technical support, including CY7C1392KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1392KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1392KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1392KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1392KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1392KV18-250BZXC?

All CY7C1392KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1392KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1392KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1392KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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