Cypress Semiconductor Corp CY7C1393KV18-300BZXC

Overview

CY7C1393KV18-300BZXC from Cypress Semiconductor is a 1M × 18 (18-Mbit), 300 MHz DDR II Synchronous SRAM with separate I/O architecture, two-word burst read/write capability, and echo-clock–assisted data capture. It operates at 1.8 V core supply with HSTL-compatible I/O supporting 1.4–1.8 V output drive, and is used in high-bandwidth packet buffering for network switches and FPGA co-processor memory interfaces.

For engineers reviewing the CY7C1393KV18-300BZXC datasheet, CY7C1393KV18-300BZXC pinout, CY7C1393KV18-300BZXC application, or CY7C1393KV18-300BZXC equivalent, key selection criteria include its 1.5-cycle read latency (DOFF = HIGH), dual K/K input clocks for precise DDR timing, C/C output clock pair with CQ/CQ echo clocks, and 165-ball FBGA package compatibility with high-density PCB layouts.

Technical Context

The device implements a synchronous pipelined architecture with independent read and write ports sharing a common address bus. Address latching occurs on alternating rising edges of K and K, enabling two-word burst access per clock cycle without bus turnaround. Internal organization is two 512K × 18 arrays, supporting sequential 18-bit word bursts on each read or write operation.

It uses a phase-locked loop (PLL) to align output data with C/C clocks and supports both DDR II mode (1.5-cycle latency, DOFF = HIGH) and DDR I–compatible mode (1-cycle latency, DOFF = LOW). All synchronous inputs are registered on K/K edges; all outputs are edge-aligned to C/C (or K/K in single-clock mode), with CQ/CQ echo clocks tightly matched to output data timing for simplified system-level capture.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm footprint, 1.4 mm height, RoHS-compliant, Pb-free option available (BZXC suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with AS7C3256A-15JCIN and IS61WV102418BLL-10MLI, CY7C1393KV18-300BZXC delivers 3× higher effective bandwidth via DDR+burst, eliminates bus turnaround, and provides echo-clock–assisted timing closure - essential for >200 MHz system clocks and jitter-sensitive designs.

Availability

CY7C1393KV18-300BZXC is available at Aetrix Electronics and suitable for network packet buffering, FPGA co-processor memory, telecom baseband processing, and industrial motion controller buffer applications requiring stable component supply and long-term lifecycle support.

Supply support for CY7C1393KV18-300BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable system-on-chip solutions for industrial, automotive, and communications markets.

CY7C1393KV18 belongs to Cypress's DDR II SIO SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking, test equipment, and FPGA-based accelerators where deterministic timing and burst efficiency are critical.

FAQ

What is the function of the DOFF pin on CY7C1393KV18-300BZXC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables DDR II operation with 1.5-cycle read latency; when LOW, the device operates in DDR I–compatible mode with 1-cycle latency. This setting is sampled synchronously on the rising edge of K and remains active until changed, directly affecting timing budget allocation in the memory controller.

Can CY7C1393KV18-300BZXC operate without external C/C and CQ/CQ clocks?

Yes - the device supports single-clock mode where K/K clocks serve both input and output timing. In this mode, read data is driven on rising edges of K/K instead of C/C, and CQ/CQ are generated relative to K/K. However, echo-clock–assisted timing closure and flight-time deskewing benefits are lost, limiting reliable operation above ~200 MHz in complex PCB layouts.

How does the ZQ pin affect output signal integrity?

ZQ connects to an external 240 Ω precision resistor to ground, enabling on-die calibration of HSTL output driver impedance. This compensates for process, voltage, and temperature variations, ensuring consistent 24–30 Ω output resistance. Proper ZQ calibration reduces reflection-induced overshoot/undershoot and maintains signal eye opening at 666 MT/s DDR data rates.

Is CY7C1393KV18-300BZXC pin-compatible with CY7C1392KV18 variants?

No - although both share the same 165-ball FBGA package, pin assignments differ significantly between the 1M × 18 (CY7C1393KV18) and 2M × 8 (CY7C1392KV18) configurations. For example, D[17:0]/Q[17:0] occupy different ball positions, and byte/nibble write select signals (BWS vs NWS) are not mapped equivalently. Board-level substitution requires layout revision.