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Cypress Semiconductor Corp CY7C1411KV18-250BZXC

Part No.:
CY7C1411KV18-250BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1411KV18-250BZXC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,447

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Product details

Overview

CY7C1411KV18 from Cypress Semiconductor is a 4 M × 8, 36-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock support (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write operations via independent ports and targets high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the CY7C1411KV18 datasheet, CY7C1411KV18 pinout, CY7C1411KV18 application, or CY7C1411KV18 equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clock (CQ) timing support, HSTL-compatible output drive, JTAG 1149.1 test access, and 165-ball FBGA package compatibility.

Technical Context

The device implements a synchronous pipelined QDR II architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses dual input clocks (K/K̄) for address/data latching and dual output clocks (C/C̄) with echo clock (CQ/CQ̄) to align data capture at the receiver.

Internally, it organizes memory as four 1 M × 8 arrays, supports depth expansion via RPS/WPS controls, and employs on-chip PLL for precise DDR edge placement. Read latency is configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH), enabling trade-offs between timing margin and throughput.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density36 Mbit (4 M × 8 configuration)
Max Clock Frequency250 MHz (K/K̄ input clock; enables 500 MT/s DDR data rate)
Read Latency1.5 cycles (DOFF = HIGH); ensures setup/hold margin for high-speed capture using CQ
Core Supply Voltage1.8 V ±0.1 V - defines minimum power delivery stability for internal logic and array operation
I/O Supply Range1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system interfaces
Package165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, high-speed memory routing
Interface StandardHSTL Class I - specifies voltage thresholds, drive strength, and termination requirements for signal integrity

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[7:0]Synchronous write data inputsLatched on rising edge of K/K̄; drives 8-bit word into selected memory location during active WPS
Q[7:0]Synchronous read data outputsDrives valid 8-bit word on rising edge of C/C̄ (or K/K̄ in single-clock mode); aligned with CQ for receiver capture
WPSWrite port selectActive-low control sampled on K rising edge; enables write transaction and data acceptance
RPSRead port selectActive-low control sampled on K rising edge; enables read transaction and output driver activation
NWS0, NWS1Nibble write selectsActive-low signals controlling D[3:0] and D[7:4]; allow partial writes without disturbing other nibbles
K, K̄Input clocksDifferential pair for address/data latching; only rising edge used for synchronization
C, C̄, CQ, CQ̄Output clocks & echo clocksC/C̄ drive Q[7:0]; CQ/CQ̄ replicate C/C̄ timing at output pins to simplify source-synchronous capture
DOFFRead latency controlHigh = 1.5-cycle latency (for timing margin); Low = 1-cycle latency (for minimal latency)
VDDQI/O power supply1.4–1.8 V supply for HSTL output buffers; must be decoupled independently from VDD
VDDCore power supply1.8 V ±0.1 V supply for internal logic, array, and PLL; requires low-noise regulation

Key Features

FeatureDesign Value
Independent read/write portsEnables true concurrent access-no bus arbitration or turnaround delay between successive reads/writes
Four-word burst transferReduces effective address bus frequency by 4×, easing PCB routing and timing closure for wide data paths
Echo clock (CQ/CQ̄) supportProvides receiver-side timing reference matched to Q[7:0] flight time, eliminating need for board-level delay tuning
JTAG 1149.1 boundary scanEnables production test and interconnect verification without physical probe access to high-speed traces
Programmable impedance output driversAllows dynamic matching to trace impedance (e.g., 50 Ω), reducing reflections and improving signal integrity

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10/40/100 Gbps switch fabric ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly to SerDes MAC controllers.

Use Value: Concurrent read/write ports eliminate arbitration stalls; 250 MHz clock + DDR yields 500 MT/s bandwidth per port-sufficient for full-duplex line-rate buffering.

Use Scenario: Frame assembly/disassembly and traffic shaping in carrier-grade optical transport equipment.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as elastic store between OTN framer and backplane interface, synchronized to system timing plane.

Use Value: Echo clocks (CQ) enable reliable capture at 500 MT/s across temperature/voltage corners; DOFF-selectable latency accommodates varying framer pipeline depths.

Baseband Processing CacheTest Equipment Pattern Memory

Use Scenario: Temporary storage of IQ samples and FFT coefficients in LTE/5G massive MIMO baseband processors.

IC Role / Device Role / Timing Role: Burst-access scratchpad memory co-located with DSP clusters, accessed via AXI4-Stream or custom parallel bus.

Use Value: Four-word burst reduces address strobe rate by 75%, simplifying timing closure on dense FPGA-to-SRAM interconnects.

Use Scenario: Storing stimulus/response vectors in high-speed automated test equipment (ATE) channel cards.

IC Role / Device Role / Timing Role: Deterministic-latency pattern memory feeding multi-GHz digital I/O pins under tight jitter constraints.

Use Value: JTAG 1149.1 support enables in-system verification of memory interconnect integrity; HSTL I/O ensures clean edges into 50 Ω transmission lines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-Mbit QDR II+ (1000 MT/s), 1.5 V core, 1.5 V I/O; no echo clock; supports 1-cycle fixed latency onlyLacks CQ timing aid; requires tighter board-level skew control; higher bandwidth but less timing margin flexibilitySelect when maximum throughput >500 MT/s is required and system-level timing budget allows stricter flight-time matching
ISSI IS61WV102416BLL-10MLI16-Mbit asynchronous SRAM, 3.3 V, single port, 10 ns access; no DDR, no burst, no echo clockLower density, no concurrency, no high-speed timing aids-suitable only for legacy or low-bandwidth control-plane bufferingSelect only for cost-sensitive, non-real-time applications where 250 MHz clocking and DDR are unnecessary

Compared with IDT72T3615L10BG, CY7C1411KV18 trades peak bandwidth for superior timing robustness via CQ and DOFF-configurable latency; versus IS61WV102416BLL-10MLI, it delivers 2.25× density, concurrent access, and deterministic DDR timing essential for modern packet processing.

Availability

CY7C1411KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1411KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1411KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched infrastructure and real-time signal processing platforms.

FAQ

What is the function of the DOFF pin on CY7C1411KV18?

The DOFF (Data Output OFFset) pin configures read latency: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it selects 1-cycle latency for minimal delay. This setting directly affects the phase relationship between C/C̄ clocks and valid Q[7:0] data, and must be set before initialization.

Can CY7C1411KV18 operate with only a single clock (K) instead of differential K/K̄?

Yes-CY7C1411KV18 supports single-clock mode where K̄ is tied to ground or VDD, and both read and write operations synchronize to the rising edge of K alone. In this mode, C/C̄ and CQ/CQ̄ remain functional, but timing margins tighten due to lack of differential noise rejection on the input clock path.

How does the NWS0/NWS1 pin functionality differ from byte write enables in other SRAMs?

NWS0 and NWS1 are nibble write selects active LOW, each controlling a 4-bit segment of D[7:0]. Unlike generic byte enables, they operate synchronously with K/K̄ and are sampled alongside data-ensuring atomic partial writes without requiring external gating logic or additional clock cycles.

Is the 165-ball FBGA package of CY7C1411KV18 compatible with standard reflow profiles?

Yes-the 165-ball FBGA (13 × 15 × 1.4 mm) uses lead-free solder balls and complies with IPC/JEDEC J-STD-020D moisture sensitivity level 3. Standard Pb-free reflow profiles with peak temperature ≤260°C and time above liquidus 60–150 seconds are validated for this package; bake preconditioning is required if exposed >168 hours at >30°C/60% RH.

CY7C1411KV18-250BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
4M x 8
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1411KV18-250BZXC FAQ

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Please submit a Request for Quotation (RFQ) for CY7C1411KV18-250BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1411KV18-250BZXC reliable?

The price and inventory of CY7C1411KV18-250BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1411KV18-250BZXC is usually 5 days.

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CY7C1411KV18-250BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1411KV18-250BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1411KV18-250BZXC?

For technical support, including CY7C1411KV18-250BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1411KV18-250BZXC requirements.

6.How does Aetrix verify that CY7C1411KV18-250BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C1411KV18-250BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1411KV18-250BZXC meets industry standards.

7.What is the process for return or replacement of CY7C1411KV18-250BZXC?

All CY7C1411KV18-250BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1411KV18-250BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1411KV18-250BZXC part is unused and in its original packaging.

Return procedure for CY7C1411KV18-250BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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