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Cypress Semiconductor Corp CY7C1412KV18-250BZC

Part No.:
CY7C1412KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1412KV18-250BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:863

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Product details

Overview

CY7C1412KV18-250BZC from Cypress Semiconductor is a 2-Mbit × 18-bit (36-Mbit total), 1.8 V QDR® II SRAM with independent read/write ports, 250 MHz maximum clock frequency (K/K and C/C), DDR interfaces delivering 500 MT/s effective data rate, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It enables high-throughput packet buffering in network line cards requiring concurrent access and strict timing coherency.

For engineers reviewing the CY7C1412KV18-250BZC datasheet, CY7C1412KV18-250BZC pinout, CY7C1412KV18-250BZC application, or CY7C1412KV18-250BZC equivalent, key selection criteria include dual-clock DDR timing, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, HSTL-15/18 I/O compatibility, echo clock (CQ/CQ) support for source-synchronous capture, and JTAG 1149.1 testability.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined architecture with physically separate read and write data paths-eliminating bus turnaround delays. It uses two independent input clock pairs (K/K for address/control/data capture; C/C for output timing) and echo clocks (CQ/CQ) aligned to C/C edges to simplify PCB layout and timing closure at 500 MT/s.

The device supports depth expansion via RPS/WPS and byte-write select (BWS[1:0]) for granular 9-bit sub-word writes. Internal self-timed write circuitry ensures deterministic write completion, while DOFF pin selects between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) read latency modes-matching legacy QDR I or optimizing for higher throughput respectively.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2M × 18 organization)
Max Clock Frequency 250 MHz (K/K and C/C inputs); enables 500 MT/s DDR data rate
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Supply Voltages Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V (supports HSTL-15 & HSTL-18)
Package 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, Pb-free option available
Interface Standard QDR II architecture with separate read/write ports, echo clocks (CQ/CQ), and JTAG 1149.1 TAP
Operating Temperature 0 °C to +70 °C (commercial grade)

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Write data input 18-bit synchronous data bus sampled on rising edge of K clock; supports burst write of two 18-bit words
Q[17:0] Read data output 18-bit synchronous output driven on rising edges of C/C clocks; tristated when RPS is deasserted
RPS Read port select Active-LOW signal sampled on rising edge of K; initiates read burst and enables Q[17:0] drivers
WPS Write port select Active-LOW signal sampled on rising edge of K; enables D[17:0] sampling and internal write path
BWS[1:0] Byte write select Two active-LOW signals controlling 9-bit sub-word writes: BWS0 → D[8:0], BWS1 → D[17:9]
K, K Input clock pair Positive/negative differential clocks for address, control, and write data capture; only rising edges used
C, C Output clock pair Positive/negative differential clocks for read data output timing; used with CQ/CQ for deskewed capture
CQ, CQ Echo clock pair Free-running clocks synchronized to C/C; referenced by system controller for source-synchronous data capture
DOFF Read latency mode Active-HIGH selects 1.5-cycle latency; LOW selects 1-cycle latency (QDR I compatibility)
VDD, VDDQ, VSS Power/ground VDD = 1.8 V core supply; VDDQ = 1.4–1.8 V I/O supply; dedicated power/ground balls per bank

Key Features

Feature Design Value
Independent read/write ports Enables true concurrent access-no bus turnaround penalty-critical for full-duplex packet buffering
Two-word burst architecture Every access delivers or accepts two sequential 18-bit words, doubling effective bandwidth per cycle
Configurable read latency DOFF pin allows runtime selection between 1-cycle (legacy compatibility) and 1.5-cycle (higher throughput) modes
HSTL-compatible I/O Supports both 1.5 V and 1.8 V HSTL signaling without level shifters-reduces BOM count and layout complexity
JTAG 1149.1 boundary scan Full IEEE 1149.1 TAP enables production test, interconnect verification, and in-system debug without external probes

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet streams in telecom switches and routers.

IC Role / Device Role / Timing Role: Dual-port SRAM serving as first-level packet memory with simultaneous ingress (write) and egress (read) operations.

Use Value: Eliminates bus turnaround delay, enabling sustained 500 MT/s throughput across full 18-bit bus width-meeting strict jitter and latency budgets.

Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) for SoC validation.

IC Role / Device Role / Timing Role: High-speed acquisition buffer synchronizing to stimulus clocks with precise phase alignment via CQ/CQ echo clocks.

Use Value: Echo clock outputs enable source-synchronous data capture at 500 MT/s, reducing setup/hold margin requirements by >150 ps.

Baseband Processing in Wireless Infrastructure FPGA Co-Processor Memory

Use Scenario: Shared memory between digital front-end (DFE) and baseband processor in 5G massive MIMO radio units.

IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory bridging FPGA and ASIC domains with independent read/write timing domains.

Use Value: Separate K/K and C/C clock domains allow asynchronous interface to FPGA fabric while maintaining tight timing control over data placement.

Use Scenario: Off-chip memory extension for Xilinx UltraScale+ or Intel Stratix 10 FPGAs implementing high-bandwidth compute kernels.

IC Role / Device Role / Timing Role: QDR II interface mapped directly to FPGA hard IP DDR controllers with echo clock feedback for timing closure.

Use Value: JTAG boundary scan simplifies board-level validation of high-speed 18-bit data paths, reducing debug time by ~40% versus non-scannable SRAMs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T3615L10BG 36-Mbit QDR II+ (not QDR II); supports 333 MHz max clock; includes dynamic impedance control Higher speed grade but requires tighter VDDQ regulation (1.4 V ±25 mV); no DOFF latency toggle Select when 333 MHz operation is required and system can support tighter I/O supply tolerance
ISSI IS61WV102418B Asynchronous 18-bit SRAM; 10 ns access time; single-port; no DDR or echo clocks Lacks concurrent read/write, burst, or source-synchronous timing-unsuitable for >200 MHz sustained throughput Only consider for cost-sensitive, low-throughput control-plane buffers where QDR II features are unused

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1412KV18-250BZC uniquely balances 250 MHz deterministic performance, configurable latency, and echo-clock–assisted timing closure-making it optimal for FPGA-based systems where design margin and debugability outweigh raw speed.

Availability

CY7C1412KV18-250BZC is available at Aetrix Electronics and suitable for network infrastructure, high-speed test instrumentation, wireless baseband processing, and FPGA co-processor memory applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for CY7C1412KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and system-level timing robustness.

CY7C1412KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed serial data infrastructure-prioritizing timing precision over density or cost.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-250BZC?

The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimized throughput; when LOW, it selects 1-cycle latency for QDR I compatibility. This setting is sampled synchronously on the rising edge of the K clock during initialization and remains latched until reset or power cycle.

Can CY7C1412KV18-250BZC operate with only a single clock domain?

Yes-by tying K to C and K to C, the device operates in single-clock mode where all timing references derive from K/K. In this configuration, Q[17:0] data is driven on rising edges of K/K instead of C/C, and CQ/CQ echo clocks track K/K instead of C/C. All functional behavior remains identical except for reduced clock routing complexity.

How does the BWS[1:0] signal control byte writes in the 18-bit interface?

BWS[1:0] provides two independent active-LOW byte-select lines: BWS0 enables writing to D[8:0], and BWS1 enables writing to D[17:9]. When either is deasserted, the corresponding 9-bit sub-word is masked and retains its prior value. Both signals are sampled synchronously with D[17:0] on the rising edge of K during write operations.

Is the 165-ball FBGA package of CY7C1412KV18-250BZC compatible with standard reflow profiles?

Yes-the 165-ball FBGA (package code BZC) is qualified for lead-free reflow per IPC/JEDEC J-STD-020D. Peak temperature must not exceed 260 °C, with time above 217 °C limited to 60–150 seconds. Thermal pad under the die is not electrically connected and may be left floating or grounded per board thermal design requirements.

CY7C1412KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1412KV18-250BZC FAQ

1.How can I place an order for CY7C1412KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1412KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1412KV18-250BZC reliable?

The price and inventory of CY7C1412KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1412KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1412KV18-250BZC?

CY7C1412KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1412KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1412KV18-250BZC?

For technical support, including CY7C1412KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1412KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1412KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1412KV18-250BZC?

All CY7C1412KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1412KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1412KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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