Cypress Semiconductor Corp CY7C1412KV18-250BZC
- Part No.:
- CY7C1412KV18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1412KV18-250BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1412KV18-250BZC from Cypress Semiconductor is a 2-Mbit × 18-bit (36-Mbit total), 1.8 V QDR® II SRAM with independent read/write ports, 250 MHz maximum clock frequency (K/K and C/C), DDR interfaces delivering 500 MT/s effective data rate, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It enables high-throughput packet buffering in network line cards requiring concurrent access and strict timing coherency.
For engineers reviewing the CY7C1412KV18-250BZC datasheet, CY7C1412KV18-250BZC pinout, CY7C1412KV18-250BZC application, or CY7C1412KV18-250BZC equivalent, key selection criteria include dual-clock DDR timing, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, HSTL-15/18 I/O compatibility, echo clock (CQ/CQ) support for source-synchronous capture, and JTAG 1149.1 testability.
Technical Context
This QDR II SRAM implements fully synchronous, pipelined architecture with physically separate read and write data paths-eliminating bus turnaround delays. It uses two independent input clock pairs (K/K for address/control/data capture; C/C for output timing) and echo clocks (CQ/CQ) aligned to C/C edges to simplify PCB layout and timing closure at 500 MT/s.
The device supports depth expansion via RPS/WPS and byte-write select (BWS[1:0]) for granular 9-bit sub-word writes. Internal self-timed write circuitry ensures deterministic write completion, while DOFF pin selects between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) read latency modes-matching legacy QDR I or optimizing for higher throughput respectively.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 organization) |
| Max Clock Frequency | 250 MHz (K/K and C/C inputs); enables 500 MT/s DDR data rate |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) |
| Supply Voltages | Core VDD = 1.8 V ±0.1 V; I/O VDDQ = 1.4–1.8 V (supports HSTL-15 & HSTL-18) |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm); RoHS-compliant, Pb-free option available |
| Interface Standard | QDR II architecture with separate read/write ports, echo clocks (CQ/CQ), and JTAG 1149.1 TAP |
| Operating Temperature | 0 °C to +70 °C (commercial grade) |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, JEDEC MO-270AC compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Write data input | 18-bit synchronous data bus sampled on rising edge of K clock; supports burst write of two 18-bit words |
| Q[17:0] | Read data output | 18-bit synchronous output driven on rising edges of C/C clocks; tristated when RPS is deasserted |
| RPS | Read port select | Active-LOW signal sampled on rising edge of K; initiates read burst and enables Q[17:0] drivers |
| WPS | Write port select | Active-LOW signal sampled on rising edge of K; enables D[17:0] sampling and internal write path |
| BWS[1:0] | Byte write select | Two active-LOW signals controlling 9-bit sub-word writes: BWS0 → D[8:0], BWS1 → D[17:9] |
| K, K | Input clock pair | Positive/negative differential clocks for address, control, and write data capture; only rising edges used |
| C, C | Output clock pair | Positive/negative differential clocks for read data output timing; used with CQ/CQ for deskewed capture |
| CQ, CQ | Echo clock pair | Free-running clocks synchronized to C/C; referenced by system controller for source-synchronous data capture |
| DOFF | Read latency mode | Active-HIGH selects 1.5-cycle latency; LOW selects 1-cycle latency (QDR I compatibility) |
| VDD, VDDQ, VSS | Power/ground | VDD = 1.8 V core supply; VDDQ = 1.4–1.8 V I/O supply; dedicated power/ground balls per bank |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables true concurrent access-no bus turnaround penalty-critical for full-duplex packet buffering |
| Two-word burst architecture | Every access delivers or accepts two sequential 18-bit words, doubling effective bandwidth per cycle |
| Configurable read latency | DOFF pin allows runtime selection between 1-cycle (legacy compatibility) and 1.5-cycle (higher throughput) modes |
| HSTL-compatible I/O | Supports both 1.5 V and 1.8 V HSTL signaling without level shifters-reduces BOM count and layout complexity |
| JTAG 1149.1 boundary scan | Full IEEE 1149.1 TAP enables production test, interconnect verification, and in-system debug without external probes |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Line-rate buffering of 10 GbE/40 GbE packet streams in telecom switches and routers. IC Role / Device Role / Timing Role: Dual-port SRAM serving as first-level packet memory with simultaneous ingress (write) and egress (read) operations. Use Value: Eliminates bus turnaround delay, enabling sustained 500 MT/s throughput across full 18-bit bus width-meeting strict jitter and latency budgets. |
Use Scenario: Real-time waveform capture and pattern generation in automated test equipment (ATE) for SoC validation. IC Role / Device Role / Timing Role: High-speed acquisition buffer synchronizing to stimulus clocks with precise phase alignment via CQ/CQ echo clocks. Use Value: Echo clock outputs enable source-synchronous data capture at 500 MT/s, reducing setup/hold margin requirements by >150 ps. |
| Baseband Processing in Wireless Infrastructure | FPGA Co-Processor Memory |
|
Use Scenario: Shared memory between digital front-end (DFE) and baseband processor in 5G massive MIMO radio units. IC Role / Device Role / Timing Role: Low-latency, deterministic-access memory bridging FPGA and ASIC domains with independent read/write timing domains. Use Value: Separate K/K and C/C clock domains allow asynchronous interface to FPGA fabric while maintaining tight timing control over data placement. |
Use Scenario: Off-chip memory extension for Xilinx UltraScale+ or Intel Stratix 10 FPGAs implementing high-bandwidth compute kernels. IC Role / Device Role / Timing Role: QDR II interface mapped directly to FPGA hard IP DDR controllers with echo clock feedback for timing closure. Use Value: JTAG boundary scan simplifies board-level validation of high-speed 18-bit data paths, reducing debug time by ~40% versus non-scannable SRAMs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+ (not QDR II); supports 333 MHz max clock; includes dynamic impedance control | Higher speed grade but requires tighter VDDQ regulation (1.4 V ±25 mV); no DOFF latency toggle | Select when 333 MHz operation is required and system can support tighter I/O supply tolerance |
| ISSI IS61WV102418B | Asynchronous 18-bit SRAM; 10 ns access time; single-port; no DDR or echo clocks | Lacks concurrent read/write, burst, or source-synchronous timing-unsuitable for >200 MHz sustained throughput | Only consider for cost-sensitive, low-throughput control-plane buffers where QDR II features are unused |
Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1412KV18-250BZC uniquely balances 250 MHz deterministic performance, configurable latency, and echo-clock–assisted timing closure-making it optimal for FPGA-based systems where design margin and debugability outweigh raw speed.
Availability
CY7C1412KV18-250BZC is available at Aetrix Electronics and suitable for network infrastructure, high-speed test instrumentation, wireless baseband processing, and FPGA co-processor memory applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for CY7C1412KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and system-level timing robustness.
CY7C1412KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed serial data infrastructure-prioritizing timing precision over density or cost.
FAQ
What is the function of the DOFF pin on CY7C1412KV18-250BZC?
The DOFF (Double-Off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for optimized throughput; when LOW, it selects 1-cycle latency for QDR I compatibility. This setting is sampled synchronously on the rising edge of the K clock during initialization and remains latched until reset or power cycle.
Can CY7C1412KV18-250BZC operate with only a single clock domain?
Yes-by tying K to C and K to C, the device operates in single-clock mode where all timing references derive from K/K. In this configuration, Q[17:0] data is driven on rising edges of K/K instead of C/C, and CQ/CQ echo clocks track K/K instead of C/C. All functional behavior remains identical except for reduced clock routing complexity.
How does the BWS[1:0] signal control byte writes in the 18-bit interface?
BWS[1:0] provides two independent active-LOW byte-select lines: BWS0 enables writing to D[8:0], and BWS1 enables writing to D[17:9]. When either is deasserted, the corresponding 9-bit sub-word is masked and retains its prior value. Both signals are sampled synchronously with D[17:0] on the rising edge of K during write operations.
Is the 165-ball FBGA package of CY7C1412KV18-250BZC compatible with standard reflow profiles?
Yes-the 165-ball FBGA (package code BZC) is qualified for lead-free reflow per IPC/JEDEC J-STD-020D. Peak temperature must not exceed 260 °C, with time above 217 °C limited to 60–150 seconds. Thermal pad under the die is not electrically connected and may be left floating or grounded per board thermal design requirements.
CY7C1412KV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1412KV18-250BZC FAQ
1.How can I place an order for CY7C1412KV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1412KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1412KV18-250BZC reliable?
The price and inventory of CY7C1412KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412KV18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1412KV18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412KV18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1412KV18-250BZC?
CY7C1412KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1412KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1412KV18-250BZC?
For technical support, including CY7C1412KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412KV18-250BZC requirements.
6.How does Aetrix verify that CY7C1412KV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1412KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412KV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1412KV18-250BZC?
All CY7C1412KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412KV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1412KV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1412KV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1412KV18-250BZC Tags

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