Cypress Semiconductor Corp CY7C1412KV18-250BZXC

Overview

CY7C1412KV18-250BZXC from Cypress Semiconductor is a 2M × 18 (36-Mbit) QDR® II SRAM with two-word burst, DDR interfaces on independent read/write ports, 250 MHz clock operation (500 MT/s), 1.8 V core supply, and 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards.

For engineers reviewing the CY7C1412KV18-250BZXC datasheet, CY7C1412KV18-250BZXC pinout, CY7C1412KV18-250BZXC application, or CY7C1412KV18-250BZXC equivalent, key selection criteria include concurrent read/write capability, echo-clock–assisted data capture at 500 MT/s, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully synchronous, pipelined architecture with physically separate read and write data paths - enabling true concurrent access without bus turnaround. It uses dual input clocks (K/K) for address/data capture and dual output clocks (C/C) with echo clocks (CQ/CQ) to compensate for board-level skew.

The device supports programmable impedance via ZQ pin, JTAG 1149.1 boundary scan, and on-chip PLL for precise data placement. Read latency is configurable via DOFF pin: 1 cycle when LOW, 1.5 cycles when HIGH - directly impacting system timing closure in switch fabric designs.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418BLL-15BLI, CY7C1412KV18-250BZXC delivers 2.5× higher throughput, echo-clock–assisted timing closure, and true dual-port concurrency - making it the sole fit for 500 MT/s packet buffer applications requiring zero bus turnaround.

Availability

CY7C1412KV18-250BZXC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, and telecom line card buffering requiring stable component supply across extended production lifecycles.

Supply support for CY7C1412KV18-250BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems.

CY7C1412KV18 belongs to the QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in high-speed communications infrastructure.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-250BZXC?

The DOFF (Data Output OFFset) pin configures read latency: when asserted LOW, the device operates with 1-cycle read latency; when HIGH, it uses 1.5-cycle latency. This setting is sampled at power-up and remains static during operation - enabling system-level timing optimization without runtime reconfiguration.

How does the ZQ pin calibrate output drive strength?

The ZQ pin connects to an external 240 Ω resistor to ground, allowing internal circuitry to calibrate HSTL output drivers for consistent impedance matching. Calibration occurs automatically at power-up and can be triggered manually via JTAG - ensuring signal integrity across voltage and temperature variations.

Can CY7C1412KV18-250BZXC operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate clock trees. In this mode, data is clocked using K/K for both input and output, and CQ/CQ derive from K/K - reducing PCB routing complexity at the cost of reduced deskew capability.

What is the purpose of BWS[1:0] in CY7C1412KV18-250BZXC?

BWS[1:0] are two active-LOW byte write select signals controlling four 9-bit lanes: BWS0 enables D[8:0], BWS1 enables D[17:9]. When a BWS bit is deasserted, corresponding data bytes are ignored during write - preserving existing memory contents in non-targeted lanes without requiring read-modify-write sequences.