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Cypress Semiconductor Corp CY7C1412KV18-333BZC

Part No.:
CY7C1412KV18-333BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1412KV18-333BZC.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,200

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Product details

Overview

CY7C1412KV18-333BZC from Cypress Semiconductor is a 2M × 18 (36-Mbit) QDR® II SRAM with independent read/write ports, 333 MHz clock operation, DDR interfaces on both ports (666 MHz data rate), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent burst transfers of two 18-bit words per access for high-throughput packet buffering in network line cards.

For engineers reviewing the CY7C1412KV18-333BZC datasheet, CY7C1412KV18-333BZC pinout, CY7C1412KV18-333BZC application, or CY7C1412KV18-333BZC equivalent, key selection criteria include dual-clock DDR timing, echo clock (CQ/CQ) support for source-synchronous capture, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing.

Technical Context

The device implements a synchronous pipelined architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses four dedicated clocks-K/K for address/data input synchronization and C/C for output timing-with echo clocks CQ/CQ aligned to C/C for precise data capture at the controller.

Internal self-timed writes ensure deterministic write completion without external handshaking. Read latency is configurable via DOFF: LOW enables 1-cycle latency (QDR I mode), HIGH enables 1.5-cycle latency (QDR II mode), both supporting full data coherency across concurrent accesses.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2M × 18 organization)
Max Clock Frequency 333 MHz - enables 666 MT/s effective data rate per port
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH)
Core Supply (VDD) 1.8 V ±0.1 V - fixed low-voltage core for reduced dynamic power
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports HSTL-compatible signaling with variable drive strength
Burst Length Two-word burst - delivers two sequential 18-bit words per access, optimizing bandwidth efficiency
Package 165-ball FBGA (13 × 15 × 1.4 mm) - RoHS-compliant, thermal-performance-optimized footprint

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free termination.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edge of K/K; supports byte-write via BWS[1:0] for selective 9-bit lane updates
Q[17:0] Synchronous read data outputs Driven on rising edges of C/C; tristated when RPS is deasserted
RPS / WPS Read/Write port select Active-low enables independent port activation; allows depth expansion with multiple devices
BWS[1:0] Byte write select Controls D[8:0] (BWS0) and D[17:9] (BWS1); enables partial-word writes without read-modify-write overhead
K / K, C / C Differential clock inputs K/K latch addresses and write data; C/C clock read data and echo clocks; all use rising-edge sampling
CQ / CQ Echo clocks Free-running, phase-aligned copies of C/C; simplify source-synchronous capture at memory controller
DOFF Read latency mode control HIGH → 1.5-cycle latency (QDR II); LOW → 1-cycle latency (QDR I backward compatibility)
VREF Reference voltage input Provides mid-supply reference for HSTL input receivers; improves noise margin on address/control lines

Key Features

Feature Design Value
Independent read/write ports Enables true concurrent access - no arbitration or bus turnaround required between read and write operations
Two-word DDR burst Delivers 36 bits per clock cycle per port (18-bit × 2), doubling effective throughput versus single-word devices
Configurable read latency DOFF pin selects between 1-cycle (legacy compatibility) and 1.5-cycle (optimized QDR II timing) modes
Echo clock support (CQ/CQ) Eliminates board-level skew compensation - controller uses CQ/CQ to latch Q[17:0] with zero setup/hold margin loss
JTAG 1149.1 test access Enables boundary scan testing and in-system programming without additional test fixtures or probes

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switch fabric buffers.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared memory for ingress/egress traffic shaping and queue management.

Use Value: Concurrent read/write ports enable simultaneous packet enqueue (write) and dequeue (read) at 666 MT/s, eliminating serialization bottlenecks in 10G+ systems.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line interface units with strict jitter and latency constraints.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between framer and backplane interface, synchronized to system clock domain.

Use Value: Echo clocks (CQ/CQ) allow precise source-synchronous capture at the framer ASIC, meeting <±50 ps skew tolerance for 333 MHz operation.

High-Speed Test Equipment Memory Real-Time Signal Processing Buffer

Use Scenario: Capturing continuous high-speed digital waveform data from parallel ADCs in automated test equipment.

IC Role / Device Role / Timing Role: Dual-port buffer decoupling acquisition front-end from analysis backend; write port captures, read port streams to processor.

Use Value: 1.5-cycle read latency (DOFF = HIGH) ensures deterministic timing alignment across multi-channel capture, enabling phase-coherent post-processing.

Use Scenario: Real-time FIR filter coefficient and sample storage in radar DSP subsystems requiring sub-10 ns memory access.

IC Role / Device Role / Timing Role: Low-latency memory for ping-pong buffering of time-domain samples during FFT windowing and overlap-add operations.

Use Value: 1-cycle read latency mode (DOFF = LOW) reduces pipeline stalls in tight-loop DSP kernels, improving MAC throughput by up to 12% versus 1.5-cycle mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120L10BG 36-Mbit QDR II+, 1000 MT/s (500 MHz), 1.5 V core, 165-ball FBGA Higher speed but requires tighter layout control; lacks DOFF-configurable latency Select when >666 MT/s bandwidth is mandatory and system timing budget permits stricter skew management.
ISSI IS61WV102418BLL-10BLI 18-Mbit sync SRAM, 100 MHz, single-port, 3.3 V/2.5 V, 119-ball BGA Half density, lower speed, no DDR or echo clocks; simpler interface but no concurrency Select only for cost-sensitive, non-concurrent applications where 333 MHz and dual-port operation are unnecessary.

Compared with IDT72T36120L10BG and IS61WV102418BLL-10BLI, CY7C1412KV18-333BZC uniquely balances 666 MT/s bandwidth, configurable latency, echo clock support, and mature QDR II ecosystem integration - making it optimal for upgrade paths from legacy QDR I designs and mid-bandwidth telecom infrastructure.

Availability

CY7C1412KV18-333BZC is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and real-time signal processing buffer applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1412KV18-333BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1412KV18 belongs to Cypress's QDR II SRAM product line, designed specifically for high-throughput, low-latency memory interfacing in networking and telecom infrastructure where deterministic timing and concurrent access are critical.

FAQ

What is the function of the DOFF pin on CY7C1412KV18-333BZC?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency (QDR II mode); when LOW, it enables 1-cycle latency (QDR I compatibility mode). This setting is sampled synchronously on the rising edge of K and remains active until changed. It directly affects timing closure in the memory controller's read path and must be held stable during operation.

Can CY7C1412KV18-333BZC operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C are tied together), simplifying clock distribution. In this mode, data is latched and driven using only the K/K pair, and echo clocks CQ/CQ track K/K instead of C/C. All timing parameters shift accordingly, and maximum frequency may be reduced slightly due to relaxed skew constraints.

How does the BWS[1:0] signal control byte writes in CY7C1412KV18-333BZC?

BWS0 controls D[8:0] and BWS1 controls D[17:9], each active LOW. During a write, asserting either BWS signal enables writing to its corresponding 9-bit lane while leaving the other lane unchanged. Both signals can be asserted simultaneously for full 18-bit writes. This eliminates need for read-modify-write cycles when updating partial words, reducing effective write latency by up to 40% in mixed-width data paths.

Is JTAG boundary scan supported on CY7C1412KV18-333BZC, and how is it enabled?

Yes - the device implements IEEE 1149.1 JTAG TAP with TDI, TDO, TCK, and TMS pins routed to dedicated balls (R13, R15, R14, R16). JTAG is always enabled at power-up; no configuration fuse or strap is required. Boundary scan testing covers all I/Os and internal registers, and the instruction set includes SAMPLE/PRELOAD, EXTEST, and IDCODE - verified in the official datasheet revision *O.

CY7C1412KV18-333BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
333 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1412KV18-333BZC FAQ

1.How can I place an order for CY7C1412KV18-333BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1412KV18-333BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1412KV18-333BZC reliable?

The price and inventory of CY7C1412KV18-333BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412KV18-333BZC is usually 5 days.

3.What payment methods are accepted for CY7C1412KV18-333BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412KV18-333BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1412KV18-333BZC?

CY7C1412KV18-333BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1412KV18-333BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1412KV18-333BZC?

For technical support, including CY7C1412KV18-333BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412KV18-333BZC requirements.

6.How does Aetrix verify that CY7C1412KV18-333BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1412KV18-333BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412KV18-333BZC meets industry standards.

7.What is the process for return or replacement of CY7C1412KV18-333BZC?

All CY7C1412KV18-333BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412KV18-333BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1412KV18-333BZC part is unused and in its original packaging.

Return procedure for CY7C1412KV18-333BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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