Cypress Semiconductor Corp CY7C1413KV18-250BZC
- Part No.:
- CY7C1413KV18-250BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1413KV18-250BZC.pdf
- Description:
- IC SRAM 36MBIT PAR 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1413KV18-250BZC from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and programmable DOFF for 1-cycle or 1.5-cycle read latency-used in high-bandwidth packet buffering for network switches and routers.
For engineers reviewing the CY7C1413KV18-250BZC datasheet, CY7C1413KV18-250BZC pinout, CY7C1413KV18-250BZC application, or CY7C1413KV18-250BZC equivalent, key selection criteria include DDR timing compliance, FBGA-165 package compatibility, QDR-II-specific control logic (WPS/RPS/BWS), and 1.5-cycle latency configuration via DOFF.
Technical Context
The device implements true dual-port synchronous pipelined access with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling concurrent read and write operations without bus turnaround. Its internal 512K × 18 array organization uses multiplexed address latching on alternating K-clock edges to support depth expansion via RPS/WPS signals.
It integrates a PLL for precise data-eye alignment, HSTL-class variable-drive output buffers, IEEE 1149.1 JTAG boundary-scan, and programmable impedance calibration (ZQ). The DOFF pin selects between QDR-I–compatible 1-cycle latency (LOW) and optimized QDR-II 1.5-cycle latency (HIGH), directly affecting system timing margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 organization) |
| Max Clock Frequency | 250 MHz - defines maximum sustained throughput of 1.8 Gbps (250 MHz × 18-bit × 2 transfers/cycle) |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum read-to-read timing constraint |
| Core Supply (VDD) | 1.8 V ±0.1 V - powers internal logic and memory array; strict tolerance required for stability |
| I/O Supply (VDDQ) | 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system interfaces |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - standard footprint for high-pin-count high-speed memory |
| Operating Temperature | 0 °C to +70 °C - commercial-grade rating suitable for indoor networking equipment |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K clock; 18-bit parallel data path for burst writes |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C clock; full 18-bit word delivered per read cycle |
| A[18:0] | Multiplexed address inputs | 19-bit address bus shared by read/write ports; latched on alternating K-clock edges |
| WPS | Write port select | Active-low signal enabling write transactions; deassertion blocks D[17:0] sampling |
| RPS | Read port select | Active-low signal enabling read transactions; deassertion forces Q[17:0] to high-impedance |
| BWS[1:0] | Byte write select | Two active-low signals controlling 9-bit byte groups (BWS0 → D[8:0], BWS1 → D[17:9]) |
| K, K | Input clocks | Differential pair for address/data capture; only rising edges used for synchronization |
| C, C | Output clocks | Differential pair for data launch; minimizes skew between Q[17:0] and clock edges |
| CQ, CQ | Echo clocks | Output-clocked copies of C/C; simplify source-synchronous capture at controller side |
| DOFF | Read latency mode control | HIGH → 1.5-cycle latency (QDR-II mode); LOW → 1-cycle latency (QDR-I compatibility) |
| VREF | Reference voltage input | Provides mid-supply reference for HSTL input receivers; must be stable at VDDQ/2 |
| ZQ | Impedance calibration terminal | Connects to external 240 Ω resistor to ground for dynamic output driver calibration |
Key Features
| Feature | Design Value |
|---|---|
| Four-word burst architecture | Reduces effective address bus toggling rate by 4× - lowers PCB routing complexity and EMI |
| Separate read/write data paths | Eliminates bidirectional bus turnaround delays - enables true concurrent read+write at full bandwidth |
| Programmable 1.5-cycle read latency | Enables tighter system timing closure in high-frequency designs while maintaining QDR-I fallback mode |
| HSTL-compatible I/O with ZQ calibration | Ensures consistent signal integrity across voltage/temperature/process corners without manual tuning |
| JTAG 1149.1 boundary scan | Supports automated PCB test and interconnect verification - critical for dense high-speed layouts |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with simultaneous write (ingress) and read (egress) access under deterministic latency. Use Value: 250 MHz DDR interface delivers 9 Gbps aggregate bandwidth (18-bit × 250 MHz × 2), meeting 10G Ethernet line-rate requirements without arbitration stalls. |
Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) during parallel pattern generation. IC Role / Device Role / Timing Role: Synchronous memory staging buffer between pattern generator and DUT interface, synchronized to system clock domain via C/C and CQ/CQ. Use Value: Echo clocks (CQ/CQ) enable reliable source-synchronous capture at 500 Mbps per pin, eliminating setup/hold violations in >200 MHz test vectors. |
| Baseband Signal Processing | FPGA Co-Processor Cache |
|
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband processing units. IC Role / Device Role / Timing Role: Low-latency memory co-located with DSP cores, interfaced via dedicated AXI-QDR bridge IP. Use Value: Configurable DOFF allows 1-cycle latency mode for real-time control loops and 1.5-cycle mode for higher-throughput data-path stages. |
Use Scenario: Off-chip cache extension for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based accelerators handling video encoding pipelines. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory mapped into FPGA's AXI4 memory space, accessed via hardened QDR-II controller logic. Use Value: 165-ball FBGA footprint matches FPGA package escape routing constraints; HSTL I/O ensures clean signal integrity up to 500 Mbps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1413KV18-300BZC | Higher max frequency (300 MHz vs. 250 MHz); identical pinout, timing model, and feature set | Required where system clock exceeds 250 MHz or timing margin is insufficient at 250 MHz | Select when bandwidth > 1.8 Gbps is needed and board layout supports tighter AC timing |
| AS7C33618A-250BIN | Pin-compatible but non-QDR-II architecture (sync SRAM with single-port burst); no echo clocks or DOFF control | Limited to non-concurrent read/write use cases; lacks QDR-II's zero-turnaround advantage | Only consider if QDR-II features (concurrency, echo clocks) are unused and cost is primary driver |
Compared with CY7C1413KV18-300BZC, the -250BZC trades 50 MHz bandwidth for relaxed timing closure and lower power; versus AS7C33618A-250BIN, it delivers true dual-port concurrency and deterministic latency control-critical for real-time packet buffering.
Availability
CY7C1413KV18-250BZC is available at Aetrix Electronics and suitable for network infrastructure, test instrumentation, wireless baseband, and FPGA-accelerated computing applications requiring stable component supply and long-term obsolescence management.
Supply support for CY7C1413KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.
This device belongs to Cypress' QDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched and real-time signal processing systems.
FAQ
What is the function of the DOFF pin on CY7C1413KV18-250BZC?
The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for optimized QDR-II operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR-I timing. This setting directly impacts minimum tAA (address-to-data valid) and tRC (read cycle time) specifications and must be fixed at power-up.
Can CY7C1413KV18-250BZC operate with only a single clock domain?
Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate input/output clock pairs. In this mode, data is launched and captured on the same clock edges, simplifying clock tree design at the cost of reduced timing margin compared to dual-clock operation.
How does the ZQ pin function during system operation?
ZQ connects to an external 240 Ω resistor to ground and enables on-die impedance calibration of HSTL output drivers. Calibration occurs automatically at power-up and can be triggered manually via JTAG. It compensates for voltage/temperature drift to maintain consistent 25 Ω or 50 Ω driver impedance, ensuring signal integrity across process corners.
Is CY7C1413KV18-250BZC pin-compatible with other devices in the CY7C14xxKV18 family?
Yes - all members (CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, CY7C1415KV18) share the identical 165-ball FBGA package and pinout. Address width, data width, and BWS signal count differ per density, but physical layout, power/ground, clock, and control pins are fully aligned for drop-in replacement within the same package variant.
CY7C1413KV18-250BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1413KV18-250BZC FAQ
1.How can I place an order for CY7C1413KV18-250BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1413KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1413KV18-250BZC reliable?
The price and inventory of CY7C1413KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413KV18-250BZC is usually 5 days.
3.What payment methods are accepted for CY7C1413KV18-250BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413KV18-250BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1413KV18-250BZC?
CY7C1413KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1413KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1413KV18-250BZC?
For technical support, including CY7C1413KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413KV18-250BZC requirements.
6.How does Aetrix verify that CY7C1413KV18-250BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1413KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413KV18-250BZC meets industry standards.
7.What is the process for return or replacement of CY7C1413KV18-250BZC?
All CY7C1413KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413KV18-250BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1413KV18-250BZC part is unused and in its original packaging.
Return procedure for CY7C1413KV18-250BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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