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Cypress Semiconductor Corp CY7C1413KV18-250BZC

Part No.:
CY7C1413KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1413KV18-250BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,165

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Product details

Overview

CY7C1413KV18-250BZC from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and programmable DOFF for 1-cycle or 1.5-cycle read latency-used in high-bandwidth packet buffering for network switches and routers.

For engineers reviewing the CY7C1413KV18-250BZC datasheet, CY7C1413KV18-250BZC pinout, CY7C1413KV18-250BZC application, or CY7C1413KV18-250BZC equivalent, key selection criteria include DDR timing compliance, FBGA-165 package compatibility, QDR-II-specific control logic (WPS/RPS/BWS), and 1.5-cycle latency configuration via DOFF.

Technical Context

The device implements true dual-port synchronous pipelined access with independent K/K input clocks for address/data capture and C/C output clocks for data launch-enabling concurrent read and write operations without bus turnaround. Its internal 512K × 18 array organization uses multiplexed address latching on alternating K-clock edges to support depth expansion via RPS/WPS signals.

It integrates a PLL for precise data-eye alignment, HSTL-class variable-drive output buffers, IEEE 1149.1 JTAG boundary-scan, and programmable impedance calibration (ZQ). The DOFF pin selects between QDR-I–compatible 1-cycle latency (LOW) and optimized QDR-II 1.5-cycle latency (HIGH), directly affecting system timing margin.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (2 M × 18 organization)
Max Clock Frequency 250 MHz - defines maximum sustained throughput of 1.8 Gbps (250 MHz × 18-bit × 2 transfers/cycle)
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum read-to-read timing constraint
Core Supply (VDD) 1.8 V ±0.1 V - powers internal logic and memory array; strict tolerance required for stability
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V system interfaces
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - standard footprint for high-pin-count high-speed memory
Operating Temperature 0 °C to +70 °C - commercial-grade rating suitable for indoor networking equipment

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[17:0] Synchronous write data inputs Latched on rising edge of K clock; 18-bit parallel data path for burst writes
Q[17:0] Synchronous read data outputs Driven on rising edge of C clock; full 18-bit word delivered per read cycle
A[18:0] Multiplexed address inputs 19-bit address bus shared by read/write ports; latched on alternating K-clock edges
WPS Write port select Active-low signal enabling write transactions; deassertion blocks D[17:0] sampling
RPS Read port select Active-low signal enabling read transactions; deassertion forces Q[17:0] to high-impedance
BWS[1:0] Byte write select Two active-low signals controlling 9-bit byte groups (BWS0 → D[8:0], BWS1 → D[17:9])
K, K Input clocks Differential pair for address/data capture; only rising edges used for synchronization
C, C Output clocks Differential pair for data launch; minimizes skew between Q[17:0] and clock edges
CQ, CQ Echo clocks Output-clocked copies of C/C; simplify source-synchronous capture at controller side
DOFF Read latency mode control HIGH → 1.5-cycle latency (QDR-II mode); LOW → 1-cycle latency (QDR-I compatibility)
VREF Reference voltage input Provides mid-supply reference for HSTL input receivers; must be stable at VDDQ/2
ZQ Impedance calibration terminal Connects to external 240 Ω resistor to ground for dynamic output driver calibration

Key Features

Feature Design Value
Four-word burst architecture Reduces effective address bus toggling rate by 4× - lowers PCB routing complexity and EMI
Separate read/write data paths Eliminates bidirectional bus turnaround delays - enables true concurrent read+write at full bandwidth
Programmable 1.5-cycle read latency Enables tighter system timing closure in high-frequency designs while maintaining QDR-I fallback mode
HSTL-compatible I/O with ZQ calibration Ensures consistent signal integrity across voltage/temperature/process corners without manual tuning
JTAG 1149.1 boundary scan Supports automated PCB test and interconnect verification - critical for dense high-speed layouts

Applications

Network Packet Buffering High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet buffer with simultaneous write (ingress) and read (egress) access under deterministic latency.

Use Value: 250 MHz DDR interface delivers 9 Gbps aggregate bandwidth (18-bit × 250 MHz × 2), meeting 10G Ethernet line-rate requirements without arbitration stalls.

Use Scenario: Capturing high-speed digital waveforms in automated test equipment (ATE) during parallel pattern generation.

IC Role / Device Role / Timing Role: Synchronous memory staging buffer between pattern generator and DUT interface, synchronized to system clock domain via C/C and CQ/CQ.

Use Value: Echo clocks (CQ/CQ) enable reliable source-synchronous capture at 500 Mbps per pin, eliminating setup/hold violations in >200 MHz test vectors.

Baseband Signal Processing FPGA Co-Processor Cache

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband processing units.

IC Role / Device Role / Timing Role: Low-latency memory co-located with DSP cores, interfaced via dedicated AXI-QDR bridge IP.

Use Value: Configurable DOFF allows 1-cycle latency mode for real-time control loops and 1.5-cycle mode for higher-throughput data-path stages.

Use Scenario: Off-chip cache extension for Xilinx Ultrascale+ or Intel Stratix 10 FPGA-based accelerators handling video encoding pipelines.

IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory mapped into FPGA's AXI4 memory space, accessed via hardened QDR-II controller logic.

Use Value: 165-ball FBGA footprint matches FPGA package escape routing constraints; HSTL I/O ensures clean signal integrity up to 500 Mbps.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR-II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1413KV18-300BZC Higher max frequency (300 MHz vs. 250 MHz); identical pinout, timing model, and feature set Required where system clock exceeds 250 MHz or timing margin is insufficient at 250 MHz Select when bandwidth > 1.8 Gbps is needed and board layout supports tighter AC timing
AS7C33618A-250BIN Pin-compatible but non-QDR-II architecture (sync SRAM with single-port burst); no echo clocks or DOFF control Limited to non-concurrent read/write use cases; lacks QDR-II's zero-turnaround advantage Only consider if QDR-II features (concurrency, echo clocks) are unused and cost is primary driver

Compared with CY7C1413KV18-300BZC, the -250BZC trades 50 MHz bandwidth for relaxed timing closure and lower power; versus AS7C33618A-250BIN, it delivers true dual-port concurrency and deterministic latency control-critical for real-time packet buffering.

Availability

CY7C1413KV18-250BZC is available at Aetrix Electronics and suitable for network infrastructure, test instrumentation, wireless baseband, and FPGA-accelerated computing applications requiring stable component supply and long-term obsolescence management.

Supply support for CY7C1413KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

This device belongs to Cypress' QDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-switched and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-250BZC?

The DOFF (Data Output Fall-off) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for optimized QDR-II operation; when LOW, it reverts to 1-cycle latency compatible with legacy QDR-I timing. This setting directly impacts minimum tAA (address-to-data valid) and tRC (read cycle time) specifications and must be fixed at power-up.

Can CY7C1413KV18-250BZC operate with only a single clock domain?

Yes - the device supports single-clock mode where K and C are tied together (and K and C likewise), eliminating need for separate input/output clock pairs. In this mode, data is launched and captured on the same clock edges, simplifying clock tree design at the cost of reduced timing margin compared to dual-clock operation.

How does the ZQ pin function during system operation?

ZQ connects to an external 240 Ω resistor to ground and enables on-die impedance calibration of HSTL output drivers. Calibration occurs automatically at power-up and can be triggered manually via JTAG. It compensates for voltage/temperature drift to maintain consistent 25 Ω or 50 Ω driver impedance, ensuring signal integrity across process corners.

Is CY7C1413KV18-250BZC pin-compatible with other devices in the CY7C14xxKV18 family?

Yes - all members (CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, CY7C1415KV18) share the identical 165-ball FBGA package and pinout. Address width, data width, and BWS signal count differ per density, but physical layout, power/ground, clock, and control pins are fully aligned for drop-in replacement within the same package variant.

CY7C1413KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
2M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1413KV18-250BZC FAQ

1.How can I place an order for CY7C1413KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1413KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1413KV18-250BZC reliable?

The price and inventory of CY7C1413KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1413KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1413KV18-250BZC?

CY7C1413KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1413KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1413KV18-250BZC?

For technical support, including CY7C1413KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1413KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1413KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1413KV18-250BZC?

All CY7C1413KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1413KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1413KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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