Cypress Semiconductor Corp CY7C1413KV18-250BZI

Overview

CY7C1413KV18-250BZI from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write operations via independent ports and supports depth expansion using RPS/WPS controls in high-bandwidth networking buffers.

For engineers reviewing the CY7C1413KV18-250BZI datasheet, CY7C1413KV18-250BZI pinout, CY7C1413KV18-250BZI application, or CY7C1413KV18-250BZI equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clock (CQ) support for timing margin recovery, HSTL-compatible output drive, JTAG 1149.1 test access, and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility.

Technical Context

This SRAM implements true dual-port QDR II architecture: separate read (Q[17:0]) and write (D[17:0]) data paths eliminate bus turnaround delays. Address latching occurs on alternating rising edges of K/K clocks, enabling full concurrency without arbitration logic.

It integrates a PLL for precise DDR edge alignment, uses echo clocks (CQ/CQ) to compensate for PCB flight time skew, and supports programmable impedance via ZQ pin. The device operates in single-clock mode (K-only) or dual-clock mode (K/K + C/C), with DOFF pin selecting between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZI suffix).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61QW25636A-250BQI, CY7C1413KV18-250BZI uniquely combines 250 MHz operation, echo clock support, and JTAG 1149.1 compliance in a single 165-ball FBGA-enabling higher-speed, testable, and layout-stable designs.

Availability

CY7C1413KV18-250BZI is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, baseband digital front-end, and test equipment pattern memory requiring stable component supply across extended product lifecycles.

Supply support for CY7C1413KV18-250BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and system-level integration.

CY7C1413KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in packet-switched infrastructure and high-speed instrumentation.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-250BZI?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin in high-speed layouts; when LOW, it reverts to 1-cycle latency for QDR I compatibility. This setting is sampled synchronously on the K clock and affects all subsequent read operations until changed.

How does the ZQ pin enable impedance calibration?

The ZQ pin connects to an external 240 Ω precision resistor to ground, allowing the device to calibrate its output driver and termination impedances dynamically. This ensures consistent HSTL signal integrity across voltage, temperature, and process variations-critical for maintaining eye opening at 500 Mbps DDR rates.

Can CY7C1413KV18-250BZI operate with only one clock input?

Yes-it supports single-clock domain operation using only the K clock for both address latching and data capture. In this mode, C/C clocks are unused, and Q[17:0] outputs are synchronized to K instead of C/C. This simplifies clock tree design but forfeits echo clock benefits and may reduce timing margin at maximum speed.

What is the purpose of BWS[1:0] in CY7C1413KV18-250BZI?

BWS[1:0] (Byte Write Select) pins control partial writes to the 18-bit data bus: BWS0 enables D[8:0], BWS1 enables D[17:9]. Both must be LOW to write full 18-bit words; asserting either HIGH masks its corresponding 9-bit byte, preserving existing memory contents. This enables efficient protocol header updates without full-word overwrites.