Cypress Semiconductor Corp CY7C1413KV18-300BZC

Overview

CY7C1413KV18-300BZC from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 300 MHz clock operation (600 Mbps DDR), 1.8 V core supply, and 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions via independent ports and supports echo clocks (CQ/CQ) for precise high-speed data capture in networking line cards and packet buffers.

For engineers reviewing the CY7C1413KV18-300BZC datasheet, CY7C1413KV18-300BZC pinout, CY7C1413KV18-300BZC application, or CY7C1413KV18-300BZC equivalent, key selection criteria include 300 MHz DDR timing compliance, 18-bit × 2 M depth configuration, FBGA-165 package compatibility, and DOFF-controlled 1-cycle vs. 1.5-cycle read latency behavior.

Technical Context

This QDR II SRAM implements separate synchronous read and write ports sharing a multiplexed address bus, with address latching on alternate rising edges of K/K clocks. It uses internal PLL for accurate data placement and supports both single-clock (K-only) and dual-clock (K/C) modes.

Read latency is configurable via DOFF pin: LOW yields 1-cycle latency (like QDR I), HIGH enables 1.5-cycle latency with higher bandwidth efficiency. Byte write selects (BWS[1:0]) enable partial writes to 9-bit subwords within the 18-bit data path without disturbing adjacent bytes.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body height, RoHS-compliant, 0.8 mm ball pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Compared with IDT72T3615L10BG and IS61WV102418B, CY7C1413KV18-300BZC uniquely delivers 300 MHz DDR concurrency, echo-clock–assisted timing closure, and programmable latency-making it irreplaceable in modern high-throughput packet buffering and baseband applications.

Availability

CY7C1413KV18-300BZC is available at Aetrix Electronics and suitable for telecom line card design, network packet processor integration, baseband digital front-end development, and automated test equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1413KV18-300BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets, with emphasis on signal integrity and timing precision.

CY7C1413KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, low-latency, concurrent memory access in high-speed networking and real-time signal processing systems.

FAQ

What is the function of the DOFF pin on CY7C1413KV18-300BZC?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency optimized for maximum bandwidth in QDR II mode; when LOW, it reverts to 1-cycle latency compatible with QDR I timing. This setting is sampled synchronously on the K clock edge at power-up or reset and remains static during operation unless reconfigured via system-level control.

Can CY7C1413KV18-300BZC operate with only one clock (K) instead of separate K and C clocks?

Yes - the device supports single-clock domain operation where the same K clock drives both input registers (D[17:0], A[18:0], WPS, RPS, BWS[1:0]) and output registers (Q[17:0]). In this mode, C/C pins are unused, and CQ/CQ echo clocks remain functional but track K rather than a dedicated output clock, preserving source-synchronous capture capability at reduced timing margin.

How does byte write select (BWS) work for the 18-bit data width?

BWS[1:0] controls two independent 9-bit subwords: BWS0 enables writing to D[8:0], and BWS1 enables writing to D[17:9]. Both signals are active-low and sampled synchronously with data on the K clock. When either is deasserted (HIGH), the corresponding 9-bit segment retains its prior value - enabling true partial writes without read-modify-write overhead or additional latency.

Is the 165-ball FBGA package of CY7C1413KV18-300BZC pin-compatible with other devices in the CY7C14xxKV18 family?

Yes - all members (CY7C1411KV18, CY7C1426KV18, CY7C1413KV18, CY7C1415KV18) share identical 165-ball FBGA pinouts and mechanical dimensions. Signal mapping differs only in data width (D/Q pins) and write-select granularity (NWS vs. BWS), allowing layout reuse across density variants while maintaining consistent power, clock, and control pin locations.