Cypress Semiconductor Corp CY7C1413KV18-333BZI
- Part No.:
- CY7C1413KV18-333BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1413KV18-333BZI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1413KV18-333BZI from Cypress Semiconductor is a 2 M × 18, 36-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock frequency, DDR interfaces on independent read/write ports, and 1.8 V core / 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards.
For engineers reviewing the CY7C1413KV18-333BZI datasheet, CY7C1413KV18-333BZI pinout, CY7C1413KV18-333BZI application, or CY7C1413KV18-333BZI equivalent, key selection criteria include 1.5-cycle read latency (DOFF = HIGH), echo clock (CQ) support for timing margin recovery, 165-ball FBGA package compatibility, and HSTL-15/18 output drive configuration.
Technical Context
The CY7C1413KV18-333BZI implements a true dual-port synchronous SRAM architecture with physically separate read and write data paths, eliminating bus turnaround delays. It uses two independent input clocks (K/K̄) for address/data capture and two output clocks (C/C̄) with echo clock (CQ/CQ̄) outputs to align data capture at the receiver.
Internally, it features pipelined command execution, synchronous self-timed writes, and programmable impedance via ZQ pin. The device supports both single-clock mode (K = C) and dual-clock mode, with DOFF pin selecting between 1-cycle (DOFF = LOW) and 1.5-cycle (DOFF = HIGH) read latency - critical for deterministic timing in switch fabric controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2 M × 18 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s effective data rate per port |
| Data Interface | Double Data Rate (DDR) on both read and write ports - transfers data on every rising edge of K/K̄ and C/C̄ |
| Read Latency | 1.5 cycles when DOFF = HIGH - ensures setup/hold margin for high-speed FPGA receivers |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports HSTL-15 and HSTL-18 interface standards |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for multi-chip memory modules in telecom hardware |
| Temperature Range | –40 °C to +85 °C (industrial grade) - qualified for base station and optical transport equipment |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free finish (BZI suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K̄; supports full 18-bit parallel writes per cycle |
| Q[17:0] | Synchronous read data outputs | Driven on rising edge of C/C̄ (or K/K̄ in single-clock mode); echo-aligned via CQ |
| A[18:0] | Multiplexed address bus | 19-bit address latched on alternating K edges for depth expansion across 2 M words |
| WPS | Write port select | Active-low enable for write operations; deassertion blocks D[17:0] sampling |
| BWS[1:0] | Byte write selects | Two active-low signals controlling D[8:0] and D[17:9]; enables partial-word updates without read-modify-write |
| CQ, CQ̄ | Echo clocks | Output copies of C/C̄ with matched trace delay - used by FPGA IDELAY/ISERDES for zero-margin capture |
| DOFF | Read latency control | High = 1.5-cycle latency (for timing closure in 333 MHz systems); Low = 1-cycle latency (legacy QDR I compatibility) |
| ZQ | Impedance calibration reference | Connects to 240 Ω ±1% external resistor to ground for on-die termination tuning |
Key Features
| Feature | Design Value |
|---|---|
| Independent read/write ports | Enables concurrent access - e.g., simultaneous packet ingress (write) and egress (read) in switch ASIC buffers |
| Four-word burst transfer | Reduces address bus toggling frequency by 4× - lowers EMI and simplifies routing in dense PCB layouts |
| HSTL-compatible output drivers | Programmable drive strength via ZQ calibration - ensures signal integrity across 10+ inch FR4 traces at 666 MT/s |
| JTAG 1149.1 boundary scan | Full IEEE 1149.1 compliance with TAP controller - enables production test and interconnect validation without physical probes |
| Phase-locked loop (PLL) | On-chip PLL locks to K clock to generate precise C/C̄ timing - eliminates external clock synthesizer in compact designs |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-in-first-out (FIFO) buffer with concurrent read/write - synchronized to switch fabric clock domain. Use Value: Eliminates bus turnaround overhead, enabling sustained 666 MT/s throughput per port - critical for non-blocking 10G/40G switch fabrics. | Use Scenario: Holding ATM cell headers and payload in OC-192/STM-64 SONET/SDH add-drop multiplexers. IC Role / Device Role / Timing Role: High-reliability, low-latency memory for real-time traffic shaping and policing engines. Use Value: 1.5-cycle read latency (DOFF = HIGH) and echo clocks (CQ) ensure deterministic timing alignment with FPGA-based traffic managers. |
| Baseband Processing Buffer | Radar Signal Processing Memory |
Use Scenario: Temporary storage of IQ samples between digital down-conversion and FFT processing in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with multi-channel ADC/DAC controllers via HSTL buses. Use Value: Four-word burst reduces address bus bandwidth requirement by 75%, easing FPGA pin count constraints in compact RRUs. | Use Scenario: Capturing high-speed chirp data from phased-array radar receivers prior to beamforming computation. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory for time-critical pulse compression pipelines. Use Value: Independent read/write ports allow simultaneous acquisition (write) and processing (read) - avoiding pipeline stalls in real-time radar DSP. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L5 | 36-Mbit QDR II+, 500 MHz max clock, 1.5 V core, 165-ball FBGA - higher speed but requires tighter power delivery | Targeted at next-gen 100G switch fabrics where >400 MHz operation is required | Select when system clock exceeds 333 MHz and voltage tolerance allows 1.5 V core |
| ISSI IS61QW25636A | 256K × 36 QDR II, 333 MHz, 1.8 V core, 165-ball FBGA - same speed but 18-Mbit density (half capacity) | Suitable for cost-sensitive designs with lower buffer depth requirements | Select when 18-Mbit capacity suffices and BOM cost reduction is prioritized over scalability |
Compared with IDT72T3615L5 and IS61QW25636A, CY7C1413KV18-333BZI delivers optimal balance of industrial temperature range, proven reliability in telecom infrastructure, and seamless migration path from legacy QDR I designs via DOFF-selectable latency.
Availability
CY7C1413KV18-333BZI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing buffer, and radar signal processing memory requiring stable component supply across extended lifecycle programs.
Supply support for CY7C1413KV18-333BZI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1413KV18 belongs to the QDR® II SRAM product line, designed specifically for deterministic, low-latency, high-throughput buffering in networking and telecommunications infrastructure where concurrent read/write bandwidth is mission-critical.
FAQ
What is the function of the DOFF pin on CY7C1413KV18-333BZI?
The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it configures 1.5-cycle latency for improved timing margin at 333 MHz; when LOW, it enables 1-cycle latency for backward compatibility with QDR I systems. This pin is sampled synchronously on the K clock and must be held stable during initialization.
Does CY7C1413KV18-333BZI require an external PLL or clock synthesizer?
No. The device integrates an on-chip PLL that locks to the input K clock to generate precisely phase-aligned C and C̄ output clocks. This eliminates the need for external clock generation circuitry, reducing board area and jitter sources - especially beneficial in space-constrained telecom modules.
How does byte write select (BWS) operate in CY7C1413KV18-333BZI?
BWS[1:0] are two active-low signals that independently enable writing to D[8:0] (BWS0) and D[17:9] (BWS1). When a BWS signal is deasserted, its corresponding 9-bit byte remains unaltered during the write cycle - enabling efficient partial-word updates without read-modify-write sequences in packet header editing applications.
Can CY7C1413KV18-333BZI operate with only one clock signal?
Yes. In single-clock mode, the K clock is routed to both K and C inputs (and K̄ to C̄), allowing all operations to be synchronized to one differential pair. This simplifies clock distribution in cost-sensitive designs, though it sacrifices some timing flexibility compared to dual-clock mode with independent read/write clock domains.
CY7C1413KV18-333BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1413KV18-333BZI FAQ
1.How can I place an order for CY7C1413KV18-333BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1413KV18-333BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1413KV18-333BZI reliable?
The price and inventory of CY7C1413KV18-333BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413KV18-333BZI is usually 5 days.
3.What payment methods are accepted for CY7C1413KV18-333BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413KV18-333BZI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1413KV18-333BZI?
CY7C1413KV18-333BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1413KV18-333BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1413KV18-333BZI?
For technical support, including CY7C1413KV18-333BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413KV18-333BZI requirements.
6.How does Aetrix verify that CY7C1413KV18-333BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1413KV18-333BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413KV18-333BZI meets industry standards.
7.What is the process for return or replacement of CY7C1413KV18-333BZI?
All CY7C1413KV18-333BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413KV18-333BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1413KV18-333BZI part is unused and in its original packaging.
Return procedure for CY7C1413KV18-333BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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