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Cypress Semiconductor Corp CY7C1414KV18-250BZC

Part No.:
CY7C1414KV18-250BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-250BZC.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:636

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Product details

Overview

CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based DDR timing for high-bandwidth networking buffers in packet switching ASICs.

For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include concurrent read/write capability, 19-bit address bus support, 36-bit DDR data interface, DOFF-controlled read latency (1 or 1.5 cycles), and 165-ball FBGA package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus, with all inputs latched on rising edges of K/K clocks and outputs registered to C/C clocks. Its dual-clock DDR interface enables simultaneous 666 Mbps data transfer on both ports without bus turnaround.

The device uses an internal PLL for precise data placement, supports byte-write masking via four BWS signals (BWS0–BWS3), and delivers full data coherency through pipelined self-timed writes. Echo clocks CQ/CQ are free-running and phase-aligned to C/C, enabling source-synchronous capture at the controller.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 organization)
Max Clock Frequency 250 MHz - sets maximum sustained bandwidth of 18 Gbps (36 bits × 250 MHz × 2 transfers/cycle)
Core Supply Voltage 1.8 V ± 0.1 V - defines minimum power rail stability requirement for internal logic and array operation
I/O Supply Range 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V HSTL-compatible controllers
Read Latency Selectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum pipeline depth in controller design
Package 165-ball FBGA (13 × 15 × 1.4 mm) - specifies board footprint, thermal dissipation, and signal integrity constraints
Burst Length Two-word fixed burst - guarantees deterministic access pattern and eliminates burst-length configuration overhead

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data input 36-bit wide DDR input bus sampled on rising edges of K/K; supports partial writes via BWS[3:0]
Q[35:0] Synchronous read data output 36-bit DDR output bus driven on rising edges of C/C; tristated when RPS is deasserted
A[18:0] Multiplexed address input 19-bit address bus latched separately for read (K) and write (K) operations; enables 1M-depth addressing
RPS / WPS Port select control Active-LOW asynchronous enable for read or write port; allows independent port gating and depth expansion
BWS[3:0] Byte write select Four active-LOW signals controlling 8-bit byte lanes within 36-bit word; enables non-destructive partial writes
C / C, CQ / CQ Output clock & echo clock pair C/C drive Q outputs; CQ/CQ are phase-matched echoes used by controller for source-synchronous data capture
K / K Input clock pair Rising edges latch all synchronous inputs (address, data, controls); define timing reference for write initiation
DOFF Read latency mode control Static input selecting 1-cycle (LOW) or 1.5-cycle (HIGH) read latency - affects controller pipeline alignment

Key Features

Feature Design Value
Separate read/write ports Enables true concurrent access - no bus turnaround required, eliminating inter-port contention in burst-heavy traffic
Two-word DDR burst Guarantees fixed 72-bit per access throughput (36-bit × 2) with deterministic timing, simplifying controller FIFO sizing
Echo clocks (CQ/CQ) Provides board-level flight-time compensation - allows controller to align sampling window precisely with data valid window
Programmable read latency DOFF pin selects between 1-cycle (low-latency streaming) or 1.5-cycle (higher timing margin) modes - configurable per system need
HSTL Class I compatible I/O Supports 1.4–1.8 V VDDQ with variable drive strength - ensures signal integrity across long traces in multi-drop memory subsystems

Applications

Packet Buffer in L2/L3 Switch ASIC High-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switch fabric.

IC Role / Device Role / Timing Role: Dual-port buffer providing zero-wait-state concurrent enqueue (write) and dequeue (read) under real-time traffic load.

Use Value: 36-bit width matches typical header+payload bus width; 250 MHz clock supports ≥9 Gbps line-rate buffering without stall cycles.

Use Scenario: Capturing high-fidelity waveform samples during automated functional test of RF transceivers.

IC Role / Device Role / Timing Role: High-throughput acquisition memory interfacing directly to ADC/DAC controllers with parallel DDR streams.

Use Value: Concurrent read/write avoids dead time between capture and analysis phases; echo clocks enable sub-nanosecond sampling alignment.

Baseband Processor Data Cache Optical Transport Network (OTN) Framing Buffer

Use Scenario: Serving as low-latency scratchpad for digital signal processors in 5G massive MIMO baseband units.

IC Role / Device Role / Timing Role: Deterministic-access local memory for FFT/IFFT coefficient staging and intermediate result storage.

Use Value: 1-cycle latency mode (DOFF = LOW) minimizes pipeline bubbles; 1.8 V core reduces dynamic power in thermally constrained modules.

Use Scenario: Aligning and buffering OTU2/OTU3 frame payloads across multiple wavelength channels in DWDM line cards.

IC Role / Device Role / Timing Role: Synchronization buffer absorbing jitter between upstream framer and downstream SerDes PHY layers.

Use Value: Full data coherency ensures frame boundary integrity; 165-ball FBGA supports dense routing in high-layer-count telecom PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1414KV18-250BZI Same die, industrial temperature grade (–40°C to +85°C) vs. commercial (0°C to +70°C); identical timing and pinout Required for extended-temperature deployments in outdoor telecom or industrial automation Select BZI for operation beyond 70°C ambient; BZC suffices for controlled indoor environments
AS7C33618A-250BIN 36-Mbit QDR II+ SRAM (enhanced version) with 300 MHz max frequency, same 1M×36 config and 165-ball FBGA Delivers 20% higher bandwidth; requires updated controller timing setup due to tighter AC specs Choose for new designs targeting >9 Gbps sustained throughput; BZC remains optimal for cost-sensitive legacy upgrades

Compared with CY7C1414KV18-250BZC, the BZI variant offers extended thermal reliability without timing or layout changes, while the AS7C33618A-250BIN enables higher bandwidth at the cost of stricter signal integrity and controller timing validation.

Availability

CY7C1414KV18-250BZC is available at Aetrix Electronics and suitable for packet switching buffers, high-speed test instrumentation, 5G baseband processing, and optical transport framing requiring stable component supply over multi-year production cycles.

Supply support for CY7C1414KV18-250BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1414KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and test equipment where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1414KV18-250BZC?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle read latency for improved timing margin; when LOW, it configures 1-cycle latency for minimal pipeline delay. This setting is sampled at power-up and remains static during operation - no runtime reconfiguration is supported.

Can CY7C1414KV18-250BZC operate with only a single clock domain?

Yes. The device supports single-clock mode where K and C are tied together (and K and C likewise), allowing simplified timing closure at the expense of reduced skew compensation. In this mode, echo clocks CQ/CQ track K/K instead of C/C, and all data transfers remain DDR but lose flight-time deskewing capability.

How many byte-write enable signals does CY7C1414KV18-250BZC support?

CY7C1414KV18-250BZC supports four byte-write select signals: BWS0 through BWS3. Each controls an 8-bit lane within the 36-bit data word (BWS0: D[7:0], BWS1: D[15:8], BWS2: D[23:16], BWS3: D[35:24]), enabling granular 1–4 byte writes without disturbing adjacent bytes.

Is the 165-ball FBGA package of CY7C1414KV18-250BZC lead-free?

Yes. The -250BZC suffix denotes a Pb-free, RoHS-compliant 165-ball FBGA package with NiPdAu surface finish. Cypress confirms full compliance with JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and qualifies the package for standard reflow profiles including peak temperatures up to 260°C.

CY7C1414KV18-250BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Bulk
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-250BZC FAQ

1.How can I place an order for CY7C1414KV18-250BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414KV18-250BZC reliable?

The price and inventory of CY7C1414KV18-250BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZC is usually 5 days.

3.What payment methods are accepted for CY7C1414KV18-250BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-250BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1414KV18-250BZC?

CY7C1414KV18-250BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-250BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-250BZC?

For technical support, including CY7C1414KV18-250BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZC requirements.

6.How does Aetrix verify that CY7C1414KV18-250BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-250BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZC meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-250BZC?

All CY7C1414KV18-250BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-250BZC part is unused and in its original packaging.

Return procedure for CY7C1414KV18-250BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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