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Cypress Semiconductor Corp CY7C1414KV18-250BZXI

Part No.:
CY7C1414KV18-250BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1414KV18-250BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,107

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Product details

Overview

CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 250 MHz maximum operating frequency (400 ps clock period), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, DDR interfaces on both ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffer applications.

For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include concurrent read/write bandwidth, 19-bit address bus support, HSTL-18-compatible I/O, DOFF-controlled read latency (1 or 1.5 cycles), and 165-ball FBGA (13 × 15 × 1.4 mm) package compatibility with high-density routing.

Technical Context

The CY7C1414KV18 implements QDR II architecture with fully independent read and write ports sharing a multiplexed 19-bit address bus (A[18:0]), enabling true concurrent transactions without bus turnaround. Its dual-clock domain uses K/K for address/data capture and C/C for output timing, with echo clocks CQ/CQ referenced to C/C to simplify high-speed data capture at 500 MT/s.

Internally organized as two 512K × 36 arrays, it supports synchronous self-timed writes, programmable byte write selects (BWS[3:0]), and DOFF-pin-selectable read latency (1 cycle LOW, 1.5 cycles HIGH). The integrated PLL ensures precise data placement relative to echo clocks, critical for deterministic timing in packet buffering and switch fabric designs.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1M × 36 organization)
Max Clock Frequency 250 MHz (400 ps period); enables 500 MT/s DDR data rate per port
Core Supply Voltage 1.8 V ±0.1 V; defines minimum power rail stability requirement for internal logic
I/O Supply Range 1.4 V to 1.8 V; supports HSTL-18 interface compliance and mixed-voltage system integration
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH); determines pipeline depth in controller design
Burst Length Two-word burst per access; delivers 72 bits per read/write cycle, optimizing bandwidth efficiency
Package 165-ball FBGA (13 × 15 × 1.4 mm); provides 0.8 mm ball pitch for high I/O count in compact footprint

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs 36-bit parallel data sampled on rising edge of K clock; supports full-word or byte-selectable writes via BWS[3:0]
Q[35:0] Synchronous read data outputs 36-bit parallel data driven on rising edges of C/C clocks; tristated when RPS is deasserted
A[18:0] Multiplexed address bus 19-bit address latched alternately on K (read) and K (write) rising edges; shared by both ports
RPS / WPS Active-low port select controls Independent enable signals for read/write ports; allow depth expansion and port gating
BWS[3:0] Byte write select inputs Four active-low signals controlling D[8:0], D[17:9], D[26:18], D[35:27]; enable partial-word writes without read-modify-write
C / C / CQ / CQ Output timing and echo clocks C/C drive Q[35:0] outputs; CQ/CQ are phase-aligned echoes used by controller for source-synchronous capture
K / K Input timing clocks Primary clocks for address/data capture; rising edges latch A[18:0], D[35:0], RPS, WPS, BWS[3:0]
DOFF Read latency mode control High = 1.5-cycle latency (pipelined), Low = 1-cycle latency (combinatorial); sets internal pipeline configuration

Key Features

Feature Design Value
Separate read/write data paths Eliminates bus turnaround overhead, enabling sustained 500 MT/s throughput on both ports simultaneously
Two-word DDR burst Delivers 72 bits per clock cycle per port-doubles effective bandwidth versus single-word devices
Echo clock support (CQ/CQ) Enables source-synchronous data capture at 500 MT/s without complex PCB trace length matching
Programmable impedance and HSTL-18 I/O Ensures signal integrity across varying load conditions and simplifies interface to FPGA/ASIC memory controllers
JTAG 1149.1 boundary scan Supports production test and debug of high-speed memory interconnects without additional probing hardware

Applications

Network Packet Buffering Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: Dual-port SRAM acting as non-blocking buffer between line cards and switching matrix, using concurrent reads/writes to sustain 40 Gbps+ throughput.

Use Value: 1M × 36 capacity and 250 MHz operation provide 18 Gbps per port bandwidth-sufficient for 10G/25G port aggregation without external arbitration.

Use Scenario: Holding forwarding tables and queue state in modular chassis-based routers.

IC Role / Device Role / Timing Role: High-speed lookup table storage with simultaneous read (match) and write (update) access enabled by QDR II architecture.

Use Value: DOFF-selectable latency allows tuning between low-latency table lookups (1-cycle) and high-throughput updates (1.5-cycle pipelined).

Telecom Baseband Processing Test Equipment Data Capture

Use Scenario: Real-time buffering of IQ samples between ADC/DAC and DSP in 4G/5G radio units.

IC Role / Device Role / Timing Role: Synchronous memory interfacing directly to FPGA-based digital front-end, using CQ/CQ for jitter-tolerant sampling.

Use Value: 1.4–1.8 V I/O range matches FPGA HSTL-18 banks; 165-ball FBGA enables dense, low-inductance layout near RF SoCs.

Use Scenario: Capturing high-speed serial protocol waveforms (PCIe, SATA) in logic analyzers and protocol testers.

IC Role / Device Role / Timing Role: Deep memory buffer capturing parallelized data streams at >500 MHz effective rate using concurrent read/write.

Use Value: Two-word burst + DDR yields 36-bit × 500 MT/s = 18 Gbps sustained capture bandwidth-exceeds PCIe Gen4 x16 aggregate rate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C1412KV18 2M × 18 (36 Mbit), same 250 MHz speed, 20-bit address bus, 18-bit I/O width Requires wider data bus (18-bit vs 36-bit) and different byte write control (BWS[1:0] only) Select when system uses 18-bit datapath or needs higher density per bit width; requires PCB redesign for I/O routing
AS7C362000B-250BIN 36 Mbit QDR II+, 250 MHz, 1.8 V core, but uses SSTL_18 I/O and lacks echo clocks (CQ/CQ) No echo clock support increases timing margin burden on controller; different termination requirements Select only if echo clock dependency is removed from system design and SSTL_18 interface is already implemented

Compared with CY7C1414KV18, CY7C1412KV18 offers identical density but narrower data path and reduced pin count, while AS7C362000B-250BIN trades echo clock simplicity for SSTL compatibility-neither provides drop-in replacement due to I/O signaling and timing architecture differences.

Availability

CY7C1414KV18 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom baseband processing, and high-speed test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C1414KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory subsystems in networking and telecom infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the DOFF pin on CY7C1414KV18?

The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle pipelined read latency for improved timing margin at high frequencies; when LOW, it selects 1-cycle combinatorial read latency for minimal delay. This setting directly affects the internal pipeline stage count and must be fixed at power-up.

Can CY7C1414KV18 operate with only a single clock input?

Yes-CY7C1414KV18 supports single-clock-domain operation where K and C are tied together, and K and C are tied together. In this mode, all timing references derive from K/K, eliminating need for separate output clocks but reducing skew compensation capability compared to dual-clock mode with echo clocks.

How does byte write select (BWS) work for the 36-bit data width?

BWS[3:0] independently controls four 9-bit byte lanes: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. Each active-low signal gates its respective byte during write operations; deselected bytes retain prior contents, enabling efficient partial-word updates without read-modify-write cycles.

Is the 165-ball FBGA package lead-free compliant?

Yes-CY7C1414KV18 is offered in both Pb-free (RoHS-compliant) and non-Pb-free versions. The -BZXI suffix denotes the Pb-free, industrial temperature grade (-40°C to +85°C) variant with 165-ball FBGA packaging, verified per JEDEC J-STD-020 moisture sensitivity level 3.

CY7C1414KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1414KV18-250BZXI FAQ

1.How can I place an order for CY7C1414KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1414KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1414KV18-250BZXI reliable?

The price and inventory of CY7C1414KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1414KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1414KV18-250BZXI?

CY7C1414KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1414KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1414KV18-250BZXI?

For technical support, including CY7C1414KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1414KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1414KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1414KV18-250BZXI?

All CY7C1414KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1414KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1414KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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