Cypress Semiconductor Corp CY7C1414KV18-300BZC
- Part No.:
- CY7C1414KV18-300BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414KV18-300BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based timing control for high-speed networking buffers in packet-switched routers.
For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include its 19-bit address bus, 36-bit bidirectional DDR data interface, DOFF-configurable 1.5-cycle/1-cycle read latency, and 165-ball FBGA package compatibility with high-density memory subsystems.
Technical Context
The CY7C1414KV18 implements a synchronous pipelined QDR II architecture with fully independent read and write ports sharing a multiplexed 19-bit address bus. Read and write operations are latched on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.
It uses dual output clocks (C/C) with corresponding echo clocks (CQ/CQ) to deskew data capture timing across PCB traces, and integrates a phase-locked loop (PLL) to align internal timing for precise 666 MHz DDR data placement. The device supports byte-write masking via four BWS signals and operates with 1.5-cycle read latency when DOFF = HIGH.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - configurable for system timing budget trade-offs |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - supports mixed-voltage interface design |
| Burst Length | Two-word burst - delivers 72 bits per access on 36-bit bus, optimizing bandwidth efficiency |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-pin-count, low-inductance routing |
| Interface Standard | HSTL Class I - ensures signal integrity at 666 MHz with controlled drive strength |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit wide DDR input bus sampled on rising edges of K/K; supports full-word or byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit DDR output bus driven on rising edges of C/C; tristated when RPS is deasserted |
| A[18:0] | Multiplexed address input | 19-bit address bus shared by read/write ports; latched on alternating K/K edges for concurrent access |
| RPS / WPS | Port select controls | Active-low synchronous enables for read/write ports; enable timing referenced to K clock edge |
| BWS[3:0] | Byte write select inputs | Four independent active-low signals controlling D[8:0], D[17:9], D[26:18], D[35:27] respectively |
| C / C / CQ / CQ | Output clock & echo clock pairs | C/C drive Q outputs; CQ/CQ are free-running echoes synchronized to C/C - used for source-synchronous capture at controller |
| K / K | Input clock pair | Rising edges sample all synchronous inputs (A, D, RPS, WPS, BWS); define system timing reference |
| DOFF | Read latency mode control | High = 1.5-cycle latency (QDR II mode); Low = 1-cycle latency (QDR I compatibility mode) |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead - enables true concurrent read+write at full bandwidth |
| Two-word DDR burst | Delivers 72 bits per access cycle on 36-bit bus - doubles effective throughput vs single-word devices |
| Programmable read latency (DOFF) | Switches between 1-cycle (QDR I) and 1.5-cycle (QDR II) modes - matches controller timing flexibility |
| Integrated PLL + echo clocks (CQ/CQ) | Enables deterministic, trace-length-insensitive data capture at 666 MHz - reduces layout complexity |
| JTAG 1149.1 boundary scan | Supports IEEE-compliant test access for production validation and board-level diagnostics |
Applications
| High-Speed Packet Buffering | Network Processor Interface |
|---|---|
|
Use Scenario: Line-rate buffering of ingress/egress packets in 10G/25G Ethernet switch ASICs. IC Role / Device Role / Timing Role: Dual-port SRAM acting as first-level packet memory with zero-wait-state concurrent read/write access. Use Value: 666 MT/s DDR bandwidth per port sustains full line-rate traffic without backpressure, while echo clocks ensure reliable data capture under ±15 ps skew. |
Use Scenario: Shared instruction/data scratchpad between multi-threaded network processor cores. IC Role / Device Role / Timing Role: Low-latency, coherency-maintained memory resource supporting simultaneous core fetch and DMA write. Use Value: Full data coherency guarantees most-current values on every read; 1.5-cycle latency mode aligns with NPU pipeline depth. |
| Telecom Baseband Processing | Test Equipment Pattern Memory |
|
Use Scenario: Real-time symbol buffering in LTE/5G baseband FPGAs for channel estimation and precoding. IC Role / Device Role / Timing Role: Burst-mode memory interfacing directly to FPGA fabric with HSTL I/O and programmable drive strength. Use Value: 1.4–1.8 V VDDQ range allows direct interface to 1.5 V or 1.8 V FPGA banks; variable drive minimizes signal integrity issues. |
Use Scenario: High-fidelity stimulus/response storage in automated test equipment (ATE) pattern generators. IC Role / Device Role / Timing Role: Deterministic, jitter-tolerant memory delivering repeatable waveforms at >600 MHz data rates. Use Value: PLL-controlled timing and echo-clock synchronization guarantee sub-cycle timing accuracy across temperature and voltage variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C33618B-333BIN | 36-Mbit QDR II+, 333 MHz, 1.5 V core/VDDQ, no echo clocks, no DOFF latency control | Lacks CQ/CQ and DOFF - requires external clock deskew and fixed 1-cycle latency | Preferred where cost sensitivity outweighs need for advanced timing control and echo-clock simplification |
| IS45S32800J-333BLI | 32-Mbit QDR II, 333 MHz, 1.8 V core, 1.5 V VDDQ, JTAG optional, no ZQ calibration | Lower density (32 Mbit), missing ZQ pin for impedance calibration - limits I/O margin at max speed | Acceptable for lower-bandwidth systems where 4-Mbit margin is acceptable and ZQ calibration is not required |
Compared with AS7C33618B-333BIN and IS45S32800J-333BLI, the CY7C1414KV18 provides unique advantages in timing determinism (via CQ/CQ and PLL), configurability (DOFF), and signal integrity (ZQ, variable drive), making it optimal for demanding telecom and test equipment designs.
Availability
CY7C1414KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interfaces, telecom baseband processing, and ATE pattern memory requiring stable component supply and long-term industrial availability.
Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
The QDR® II SRAM product line was designed specifically for ultra-low-latency, high-throughput memory subsystems in networking and telecom infrastructure, emphasizing deterministic timing, concurrent access, and signal integrity at multi-Gbps data rates.
FAQ
What is the function of the DOFF pin on CY7C1414KV18?
The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle QDR II latency for optimized timing margin in high-speed systems; when LOW, it reverts to 1-cycle QDR I latency for backward compatibility. This setting is sampled synchronously on the K clock edge and affects all subsequent read operations until changed.
How does the CY7C1414KV18 handle byte-write operations?
Byte-write is controlled by four active-low BWS[3:0] signals, each selecting one 9-bit byte within the 36-bit D[35:0] bus: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. During a write, only bytes with asserted BWS signals are updated; unselected bytes retain prior contents, enabling partial-word updates without read-modify-write cycles.
Can CY7C1414KV18 operate with a single clock domain instead of differential clocks?
Yes - the device supports single-clock mode where K and C are tied together (and K and C tied together), allowing use of only two clocks instead of four. In this mode, Q outputs are clocked by K/K, and CQ/CQ become echoes of K/K. All timing parameters remain valid, but echo-clock deskew benefits are reduced compared to full differential operation.
What is the role of the ZQ pin in CY7C1414KV18?
ZQ is an impedance calibration reference pin connected to an external 240 Ω resistor to ground. It enables on-die termination (ODT) calibration for HSTL I/O drivers, ensuring consistent output impedance across voltage and temperature variations. This maintains signal integrity at 666 MHz and reduces PCB routing constraints for stub-free topologies.
CY7C1414KV18-300BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Bulk
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 300 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1414KV18-300BZC FAQ
1.How can I place an order for CY7C1414KV18-300BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414KV18-300BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414KV18-300BZC reliable?
The price and inventory of CY7C1414KV18-300BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-300BZC is usually 5 days.
3.What payment methods are accepted for CY7C1414KV18-300BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-300BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1414KV18-300BZC?
CY7C1414KV18-300BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414KV18-300BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414KV18-300BZC?
For technical support, including CY7C1414KV18-300BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-300BZC requirements.
6.How does Aetrix verify that CY7C1414KV18-300BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1414KV18-300BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-300BZC meets industry standards.
7.What is the process for return or replacement of CY7C1414KV18-300BZC?
All CY7C1414KV18-300BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-300BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414KV18-300BZC part is unused and in its original packaging.
Return procedure for CY7C1414KV18-300BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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