Cypress Semiconductor Corp CY7C1414KV18-333BZXI
- Part No.:
- CY7C1414KV18-333BZXI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1414KV18-333BZXI.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1414KV18 from Cypress Semiconductor is a 1M × 36, 36-Mbit QDR® II SRAM with two-word burst architecture, 333 MHz clock frequency, DDR interfaces on both read and write ports (666 MHz data rate), and 1.8 V core / 1.4–1.8 V I/O supply. It delivers concurrent read/write transactions for high-bandwidth networking buffers in packet forwarding engines.
For engineers reviewing the CY7C1414KV18 datasheet, CY7C1414KV18 pinout, CY7C1414KV18 application, or CY7C1414KV18 equivalent, key selection criteria include its 19-bit address bus, echo-clock–assisted timing closure at 666 MHz, DOFF-configurable 1-cycle vs. 1.5-cycle read latency, and 165-ball FBGA package compatibility with high-speed memory subsystems.
Technical Context
The CY7C1414KV18 implements a synchronous pipelined QDR II architecture with physically separate read and write ports sharing a multiplexed 19-bit address bus. All inputs are registered on rising edges of K/K clocks; all outputs are registered on C/C clocks, enabling precise DDR timing control without bus turnaround.
It integrates a PLL for accurate data placement, supports JTAG 1149.1 boundary scan, and uses variable-drive HSTL output buffers. Depth expansion is enabled via four byte write selects (BWS[3:0]) and independent RPS/WPS controls - critical for building wide-memory systems with deterministic latency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (1M × 36 organization) |
| Max Clock Frequency | 333 MHz - enables 666 MT/s DDR data transfers per port |
| Read Latency | Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) |
| Supply Voltages | VDD = 1.8 V ±0.1 V; VDDQ = 1.4–1.8 V - supports mixed-signal SoC interfacing |
| Burst Length | Two-word burst on every access - guarantees predictable bandwidth per transaction |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - optimized for controlled-impedance routing and thermal dissipation |
| Interface Standard | HSTL Class I - ensures signal integrity at 666 MHz with echo-clock–assisted capture |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, RoHS-compliant, with 0.8 mm ball pitch and standard HSTL-compatible pad layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data input | 36-bit parallel data sampled on rising edge of K/K; supports byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data output | 36-bit parallel data driven on rising edge of C/C; tristated when RPS is deasserted |
| A[18:0] | Multiplexed address input | 19-bit address latched alternately for read (K) and write (K) ports - eliminates dual-bus complexity |
| RPS / WPS | Port select controls | Active-LOW signals enabling independent read/write port activation - essential for concurrent operation |
| C / C, CQ / CQ | Output clock & echo clock pairs | C/C deskew read data flight time; CQ/CQ provide source-synchronous capture reference for FPGA/ASIC receivers |
| K / K | Input clock pair | Rising edges latch all synchronous inputs (address, data, control); define system timing base for both ports |
| DOFF | Read latency mode control | HIGH → 1.5-cycle latency (QDR II mode); LOW → 1-cycle latency (QDR I compatibility) |
| BWS[3:0] | Byte write enable | Four independent active-LOW selects for 36-bit data - enables partial writes without read-modify-write overhead |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround delay - enables true concurrent access for full-duplex memory subsystems |
| Two-word burst architecture | Guarantees minimum 72-bit data transfer per access - optimizes bandwidth utilization in burst-oriented protocols |
| Echo clock support (CQ/CQ) | Enables source-synchronous data capture at 666 MHz - reduces timing margin requirements in FPGA-based designs |
| Programmable read latency (DOFF) | Allows runtime selection between QDR I (1-cycle) and QDR II (1.5-cycle) modes - simplifies migration and interoperability |
| JTAG 1149.1 compliance | Supports boundary scan testing and in-system diagnostics - critical for high-reliability telecom and networking hardware |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory for 10G/25G Ethernet |
|---|---|
|
Use Scenario: High-throughput packet buffering in multi-port Ethernet switch fabric ASICs requiring zero-latency read-after-write for flow control. IC Role / Device Role / Timing Role: Dual-port SRAM acting as ingress/egress FIFO with simultaneous read and write access to same memory array. Use Value: Concurrent port operation eliminates arbitration stalls; 666 MT/s DDR bandwidth sustains 25 Gbps line-rate traffic with sub-10 ns latency. |
Use Scenario: Shared buffer memory on telecom line cards handling aggregated 10G/25G client interfaces with strict jitter and latency constraints. IC Role / Device Role / Timing Role: QDR II SRAM providing deterministic, low-jitter data staging between SerDes PHYs and packet processors. Use Value: Echo clocks (CQ/CQ) align data capture windows across multiple devices; HSTL I/O ensures signal integrity at 666 MHz. |
| Network Processor Lookaside Cache | High-Speed Test Equipment Memory |
|
Use Scenario: Lookaside cache for network processors performing deep packet inspection, where metadata and payload must be accessed concurrently. IC Role / Device Role / Timing Role: Low-latency, wide-data SRAM serving as offload memory for pattern matching and header parsing engines. Use Value: 1M × 36 width matches typical NPU internal bus widths; DOFF pin allows latency tuning to match pipeline stages. |
Use Scenario: Acquisition memory in high-speed digital pattern generators and logic analyzers requiring glitch-free, deterministic sampling. IC Role / Device Role / Timing Role: Synchronous burst memory capturing parallel test vectors at maximum system clock rate without metastability risk. Use Value: Self-timed writes and pipelined reads guarantee cycle-accurate data capture; JTAG support enables in-field calibration verification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36150 | 36-Mbit QDR II+ (366 MHz max), 1.5 V core, integrated DLL instead of PLL | Higher frequency margin but requires tighter VDD tolerance (±3%); no DOFF latency toggle | Prefer for new designs targeting >333 MHz with stable 1.5 V supply; avoid if legacy QDR I compatibility needed |
| ISSI IS61WV102436B | 1M × 36 sync SRAM (no QDR), single-port, 200 MHz max, 3.3 V tolerant I/O | Lacks concurrent read/write; lower bandwidth but simpler interface and wider voltage range | Select only for cost-sensitive, non-concurrent applications where 200 MHz bandwidth suffices and 3.3 V interfacing is required |
Compared with IDT72T36150 and IS61WV102436B, CY7C1414KV18 uniquely balances QDR II concurrency, programmable latency, and 1.8 V/1.4 V flexible I/O - making it optimal for upgrade paths from QDR I and bandwidth-critical telecom infrastructure.
Availability
CY7C1414KV18 is available at Aetrix Electronics and suitable for packet forwarding engines, telecom line cards, network processor caches, and high-speed test equipment requiring stable component supply across extended product lifecycles.
Supply support for CY7C1414KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C1414KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, high-bandwidth memory subsystems in networking and test equipment where concurrent access and sub-10 ns latency are mandatory.
FAQ
What is the function of the DOFF pin on CY7C1414KV18?
The DOFF (Data Output OFF) pin configures read latency mode: when asserted HIGH, it enables QDR II operation with 1.5-cycle latency; when LOW, it reverts to QDR I–compatible 1-cycle latency. This allows runtime optimization for pipeline alignment or backward compatibility without hardware change.
Can CY7C1414KV18 operate with only one clock domain (K-only)?
Yes - the device supports single-clock-mode operation using only K and K for both input latching and output driving. In this mode, C and C are unused, and Q[35:0] are clocked by K/K. However, echo clocks (CQ/CQ) remain inactive, reducing timing margin for high-speed capture.
How does the BWS[3:0] signal work for partial writes?
BWS[3:0] are active-LOW byte write enables controlling D[35:0] in eight-bit groups: BWS0→D[7:0], BWS1→D[15:8], BWS2→D[23:16], BWS3→D[31:24]. D[35:32] are not byte-selectable and always written when their respective BWS is asserted. Unselected bytes retain prior values.
Is CY7C1414KV18 pin-compatible with other QDR II SRAMs in the CY7C14xxKV18 family?
No - while all share the same 165-ball FBGA footprint, pin assignments differ significantly across CY7C1425KV18 (×9), CY7C1412KV18 (×18), and CY7C1414KV18 (×36), especially for data, address, and byte-select signals. PCB layout is not interchangeable; each requires dedicated routing.
CY7C1414KV18-333BZXI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 333 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1414KV18-333BZXI FAQ
1.How can I place an order for CY7C1414KV18-333BZXI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1414KV18-333BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1414KV18-333BZXI reliable?
The price and inventory of CY7C1414KV18-333BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1414KV18-333BZXI is usually 5 days.
3.What payment methods are accepted for CY7C1414KV18-333BZXI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1414KV18-333BZXI transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1414KV18-333BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1414KV18-333BZXI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1414KV18-333BZXI?
For technical support, including CY7C1414KV18-333BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1414KV18-333BZXI requirements.
6.How does Aetrix verify that CY7C1414KV18-333BZXI is sourced from the original manufacturer or authorized distributors?
All CY7C1414KV18-333BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1414KV18-333BZXI meets industry standards.
7.What is the process for return or replacement of CY7C1414KV18-333BZXI?
All CY7C1414KV18-333BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1414KV18-333BZXI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1414KV18-333BZXI part is unused and in its original packaging.
Return procedure for CY7C1414KV18-333BZXI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1414KV18-333BZXI Tags

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