Cypress Semiconductor Corp CY7C1415KV18-250BZC

Overview

CY7C1415KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based DDR timing for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1415KV18 datasheet, CY7C1415KV18 pinout, CY7C1415KV18 application, or CY7C1415KV18 equivalent, key selection criteria include concurrent read/write throughput, 1-cycle vs. 1.5-cycle read latency (DOFF-controlled), FBGA-165 package compatibility, and HSTL-15/18 I/O drive support in high-speed packet buffering systems.

Technical Context

This QDR II SRAM implements dual independent DDR interfaces: read data transfers on rising edges of C/C clocks at 500 Mbps (250 MHz × 2), while write data latches on K/K clock rising edges. Address bus is multiplexed and sampled synchronously on K clock rising edges for both ports.

The device uses internal self-timed writes and supports programmable read latency (1 or 1.5 cycles) via DOFF pin. Echo clocks CQ/CQ are phase-aligned with output data to simplify capture in FPGA-based line cards, and the PLL ensures precise data placement relative to system clocks.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T36120L10BG and IS61WV102436B, CY7C1415KV18 uniquely supports configurable 1/1.5-cycle read latency and 1.4–1.8 V VDDQ flexibility - critical for mixed-voltage FPGA platforms and latency-critical packet buffering.

Availability

CY7C1415KV18 is available at Aetrix Electronics and suitable for telecom line card buffer, network packet processor cache, and baseband digital front-end applications requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for CY7C1415KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with focus on signal integrity and timing precision.

CY7C1415KV18 belongs to the QDR® II SRAM product line, engineered specifically for deterministic, high-throughput buffering in packet-switched infrastructure where concurrent read/write and sub-ns timing control are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1415KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle read latency (QDR II mode); when LOW, it selects 1-cycle latency (QDR I compatibility). This setting is sampled synchronously on the K clock rising edge at power-up or during operation, and affects all subsequent read transactions until changed.

Can CY7C1415KV18 operate with only a single clock domain (K = C)?

Yes - CY7C1415KV18 supports single-clock mode where K and C are tied together (and K and C likewise). In this configuration, data is latched and driven on the same clock edges, simplifying timing but reducing maximum achievable bandwidth compared to dual-clock operation with optimized skew management.

How many address bits does CY7C1415KV18 require, and how are they used?

CY7C1415KV18 requires 18 address bits (A[17:0]) to access its 1 M × 36 array. These are multiplexed for both read and write operations and sampled on the rising edge of the K clock. The internal four-array structure (256 K × 36 each) allows full addressing with fewer pins than discrete parallel SRAMs.

What is the purpose of the BWS[3:0] signals, and how do they map to data bits?

BWS[3:0] are active-low byte write select signals controlling 9-bit lanes: BWS0 → D[8:0], BWS1 → D[17:9], BWS2 → D[26:18], BWS3 → D[35:27]. When a BWS bit is deasserted (HIGH), the corresponding 9-bit byte is masked and unchanged during write cycles - enabling partial-word updates without read-modify-write overhead.