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Cypress Semiconductor Corp CY7C1415KV18-250BZXI

Part No.:
CY7C1415KV18-250BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1415KV18-250BZXI.pdf
Description:
IC SRAM 36MBIT PAR 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,520

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Product details

Overview

CY7C1415KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 250 MHz maximum operating frequency (400 Mbps per pin), 1.8 V core supply, and 1.4–1.8 V I/O supply. It features separate read/write ports, echo clocks (CQ/CQ), and PLL-based DDR timing for high-bandwidth networking buffer applications.

For engineers reviewing the CY7C1415KV18 datasheet, CY7C1415KV18 pinout, CY7C1415KV18 application, or CY7C1415KV18 equivalent, key selection criteria include 1 M × 36 data width, 165-ball FBGA package, DOFF-controlled read latency (1 or 1.5 cycles), HSTL-compatible outputs, and JTAG 1149.1 test support.

Technical Context

The CY7C1415KV18 implements a synchronous pipelined QDR II architecture with independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Read and write operations are latched on alternate rising edges of the K clock, enabling concurrent access without bus turnaround.

It uses dual input clocks (K/K) for write control and dual output clocks (C/C) plus echo clocks (CQ/CQ) to manage skew in high-speed systems. The internal PLL ensures precise data placement, and DOFF pin selects between 1-cycle (LOW) and 1.5-cycle (HIGH) read latency modes.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization1 M × 36 (36 Mbit total); supports 256K × 36 internal array configuration
Max Clock Frequency250 MHz (K/K and C/C inputs); enables 500 MT/s effective throughput
Data RateDDR interface: 500 Mbps per data pin (1000 Mbps effective per 36-bit port)
Core Supply (VDD)1.8 V ±0.1 V; powers internal logic and memory array
I/O Supply (VDDQ)1.4 V to 1.8 V; supports HSTL Class I/II drive and 1.5 V/1.8 V system interfacing
Read LatencySelectable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) for timing flexibility
Package165-ball FBGA (13 mm × 15 mm × 1.4 mm); RoHS-compliant, 0.8 mm ball pitch

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 × 15 × 1.4 mm, 0.8 mm ball pitch, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
D[35:0]Write data inputs36-bit synchronous inputs sampled on rising edge of K clock; support byte-selectable writes via BWS[3:0]
Q[35:0]Read data outputs36-bit synchronous outputs driven on rising edge of C/C clocks; echo-clocked for timing margin
A[17:0]Multiplexed address bus18-bit address shared by read/write ports; latched on K clock rising edge
K, KWrite clock inputsDifferential pair for write timing; only rising edges used for synchronization
C, CRead clock inputsDifferential pair for read output timing; drives Q[35:0] and CQ/CQ
CQ, CQEcho clocksOutput copies of C/C; simplify source-synchronous capture at controller side
WPSWrite port selectActive-low signal enabling write transactions; deassertion disables D[35:0] sampling
BWS[3:0]Byte write selectsFour active-low signals controlling 8-bit segments of D[35:0]; enable partial writes without read-modify-write
DOFFRead latency controlHigh = 1.5-cycle latency (pipelined mode); Low = 1-cycle latency (QDR I compatibility)
VDD, VDDQ, VSSPower/groundSeparate 1.8 V core (VDD) and programmable I/O (VDDQ) supplies; multiple VSS balls for noise reduction
TCK/TMS/TDI/TDOJTAG interfaceIEEE 1149.1 compliant boundary scan; supports testing and programming in-system

Key Features

FeatureDesign Value
Four-word burst transferReduces required address transitions by 75% per transaction-only one A[17:0] setup per 144-bit data block
Independent read/write portsEnables true concurrent access-no bus arbitration or turnaround delay between back-to-back R/W operations
HSTL Class I/II programmable driveAdjustable output strength matches trace impedance (40–60 Ω), minimizing reflections in >400 Mbps links
PLL-based clock alignmentInternal phase-locked loop aligns CQ/CQ edges to Q[35:0] valid windows, relaxing PCB routing constraints
Byte-selectable write capabilityBWS[3:0] allows updating any subset of four 8-bit bytes-critical for packet header modification without full-word overwrite

Applications

Packet Buffer in L2/L3 SwitchesNetwork Processor Data Cache

Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit switching ASICs with strict latency budgets.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM serving as frame buffer with concurrent read (forwarding lookup) and write (frame arrival) paths.

Use Value: 36-bit width matches typical 4-byte-aligned packet metadata + payload segments; 250 MHz DDR delivers 18 Gbps aggregate bandwidth for line-rate 10GbE buffering.

Use Scenario: Caching forwarding tables and flow state in programmable network processors handling IPv4/IPv6 lookups.

IC Role / Device Role / Timing Role: Synchronous cache memory accessed by NPU microengines with deterministic 1-cycle or 1.5-cycle read response.

Use Value: DOFF-selectable latency allows tuning for critical path (LOW) or power-sensitive (HIGH) execution modes; JTAG enables in-field memory diagnostics.

Baseband Digital Front-End BufferHigh-Speed Test Equipment Memory

Use Scenario: Temporary storage of IQ samples between ADC/DAC and FPGA-based channelization in 4G/5G radio units.

IC Role / Device Role / Timing Role: Burst-mode SRAM interfacing directly with FPGA fabric using source-synchronous CQ/CQ timing.

Use Value: Echo clocks eliminate need for dynamic deskew logic; 1.4–1.8 V VDDQ supports mixed-voltage FPGA I/O banks without level shifters.

Use Scenario: Pattern generation and response capture in automated test equipment requiring deterministic, high-bandwidth memory access.

IC Role / Device Role / Timing Role: Programmable stimulus/response memory with JTAG boundary scan for production test validation.

Use Value: IEEE 1149.1 compliance enables structural testing of SRAM interconnects; 165-ball FBGA provides reliable thermal/mechanical performance under repeated thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IDT72T3615L10BG36-Mbit QDR II+, 167-ball FBGA, 333 MHz max, 1.5 V core/VDDQHigher speed grade but requires 1.5 V only; no DOFF latency selection-fixed 1.5-cycle latencyChoose when system demands >250 MHz operation and 1.5 V supply is fixed; not drop-in due to voltage and latency behavior mismatch
ISSI IS61QW3632ALL36-Mbit QDR II, 165-ball FBGA, 200 MHz max, 1.8 V core/VDDQLower max frequency; lacks echo clocks (CQ/CQ) and JTAG supportChoose for cost-sensitive designs where 400 Mbps/pin is sufficient and source-synchronous capture is handled externally

Compared with IDT72T3615L10BG and IS61QW3632ALL, CY7C1415KV18 uniquely balances 250 MHz operation, flexible 1.4–1.8 V I/O, DOFF-selectable latency, and integrated echo clocks-making it optimal for FPGA-based networking systems needing timing margin and voltage flexibility.

Availability

CY7C1415KV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor caching, and baseband digital front-end applications requiring stable component supply across extended product lifecycles.

Supply support for CY7C1415KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

The QDR® II SRAM product line was designed specifically for bandwidth-intensive infrastructure applications-such as routers, switches, and wireless base stations-where concurrent read/write, low latency, and DDR timing predictability are mandatory.

FAQ

What is the function of the DOFF pin on CY7C1415KV18?

The DOFF (Data Output OFFset) pin selects read latency mode: when asserted HIGH, it enables 1.5-cycle latency for improved timing margin in high-speed systems; when LOW, it configures 1-cycle latency for QDR I compatibility. This setting affects the number of clock cycles between address assertion and valid Q[35:0] output, and is sampled synchronously on the K clock.

Can CY7C1415KV18 operate with only a single clock domain?

Yes-CY7C1415KV18 supports single-clock mode where K and C inputs are tied together, and CQ/CQ outputs are disabled. In this mode, data is latched and driven using the same clock edge, simplifying interface design at the cost of reduced timing margin and loss of echo clock benefits. All timing parameters shift to single-edge specifications per the datasheet.

How does byte write select (BWS) work in CY7C1415KV18?

BWS[3:0] are four active-low signals that independently enable writing to each 8-bit segment of the 36-bit D[35:0] bus. When a BWS bit is LOW, its corresponding byte is written; when HIGH, that byte remains unaltered. This eliminates need for read-modify-write cycles during partial updates-critical for packet header manipulation in networking hardware.

Is JTAG boundary scan supported on CY7C1415KV18?

Yes-CY7C1415KV18 integrates IEEE 1149.1-compliant TAP controller with TDI, TDO, TCK, and TMS pins. It supports instruction register loading, boundary scan register access, and device identification. JTAG can be used for production testing, interconnect verification, and in-system diagnostics-but must be disabled via strap or fuse if unused to prevent unintended activation.

CY7C1415KV18-250BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1415KV18-250BZXI FAQ

1.How can I place an order for CY7C1415KV18-250BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1415KV18-250BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1415KV18-250BZXI reliable?

The price and inventory of CY7C1415KV18-250BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415KV18-250BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1415KV18-250BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415KV18-250BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1415KV18-250BZXI?

CY7C1415KV18-250BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1415KV18-250BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1415KV18-250BZXI?

For technical support, including CY7C1415KV18-250BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415KV18-250BZXI requirements.

6.How does Aetrix verify that CY7C1415KV18-250BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1415KV18-250BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415KV18-250BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1415KV18-250BZXI?

All CY7C1415KV18-250BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415KV18-250BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1415KV18-250BZXI part is unused and in its original packaging.

Return procedure for CY7C1415KV18-250BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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