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Cypress Semiconductor Corp CY7C1415KV18-300BZXI

Part No.:
CY7C1415KV18-300BZXI
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1415KV18-300BZXI.pdf
Description:
IC SRAM 36MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10,531

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Product details

Overview

CY7C1415KV18 from Cypress Semiconductor is a 1 M × 36, 36-Mbit QDR® II SRAM with four-word burst architecture, 333 MHz clock operation (666 MHz DDR data rate), 1.8 V core supply, and 1.4–1.8 V I/O supply - deployed in high-bandwidth packet buffering for network line cards and switch fabric interfaces.

For engineers reviewing the CY7C1415KV18 datasheet, CY7C1415KV18 pinout, CY7C1415KV18 application, or CY7C1415KV18 equivalent, key selection criteria include read latency mode (1-cycle vs. 1.5-cycle via DOFF), echo clock (CQ/CQ) timing margining, byte write select granularity (BWS[3:0]), and FBGA-165 package compatibility with high-speed PCB layout constraints.

Technical Context

This QDR II SRAM implements fully independent read and write ports with separate address latching on alternating K-clock edges, enabling true concurrent read/write transactions without bus turnaround. It uses dual input clocks (K/K for writes, C/C for reads) and echo clocks (CQ/CQ) to decouple data capture timing from board-level skew.

The device integrates a phase-locked loop (PLL) for precise internal data placement, supports synchronous self-timed writes, and provides full data coherency across both ports. Read latency is configurable: 1 cycle when DOFF = LOW (QDR I–compatible mode) or 1.5 cycles when DOFF = HIGH (optimized QDR II mode).

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 36 Mbit (1 M × 36 organization) - supports 36-bit wide data paths without external width expansion.
Max Clock Frequency 333 MHz - enables 666 MT/s DDR throughput per port, delivering 24 Gb/s aggregate bandwidth.
Read Latency Configurable: 1 cycle (DOFF = LOW) or 1.5 cycles (DOFF = HIGH) - determines minimum read-to-read interval in pipelined systems.
Core Supply (VDD) 1.8 V ± 0.1 V - requires tight regulation; decoupling critical for jitter-sensitive PLL and DDR timing.
I/O Supply (VDDQ) 1.4 V to 1.8 V - supports interoperability with 1.5 V or 1.8 V logic families; ZQ calibration enabled.
Burst Length Four-word burst - reduces effective address bus frequency by 4×, easing routing and timing closure.
Write Select Granularity Byte-level (BWS[3:0]) - allows partial 36-bit word updates without read-modify-write, essential for packet header editing.

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm, RoHS-compliant, with 0.8 mm ball pitch and standard JEDEC MO-270AC footprint.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Sampled on rising edge of K/K; 36-bit parallel input path for burst writes.
Q[35:0] Synchronous read data outputs Driven on rising edge of C/C; full 36-bit output bus with echo-clock-aligned timing.
A[17:0] Multiplexed address inputs 18-bit address bus shared by read/write ports; latched on alternating K-clock edges.
BWS[3:0] Byte write select (active LOW) Independent control over four 9-bit bytes; enables selective 36-bit word modification.
CQ / CQ Echo clocks (output) Source-synchronous clocks paired with Q[35:0]; simplify high-speed data capture at receiver.
K / K Input clocks (write & address) Rising-edge-triggered; K used for write/data/address sampling; K for complementary timing margin.
C / C Input clocks (read) Rising-edge-triggered; drive read data registers and synchronize Q[35:0] output timing.
DOFF Read latency mode control HIGH → 1.5-cycle latency (QDR II); LOW → 1-cycle latency (QDR I compatibility).
VREF Reference voltage input Supplies HSTL Class I reference for input threshold setting; must be stable at 0.75 × VDDQ.
ZQ Impedance calibration terminal Connects to 240 Ω resistor to ground for dynamic output driver impedance tuning.

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay - enables back-to-back read and write operations in same clock cycle.
Four-word burst architecture Reduces required address transition rate by 75%, lowering signal integrity demands on address routing.
DDR interfaces on both ports Delivers 666 MT/s effective data rate per port using 333 MHz clock - doubles bandwidth vs. SDR.
Programmable output drive strength HSTL Class I outputs with ZQ calibration - ensures consistent edge rates and termination matching across voltage/temp.
JTAG 1149.1 boundary scan Enables production test and interconnect verification without physical probe access to dense FBGA pads.

Applications

Network Packet Buffering Switch Fabric Interface

Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer between ingress parser and egress scheduler.

Use Value: Concurrent read/write capability enables real-time header modification while maintaining full line-rate throughput.

Use Scenario: Interfacing ASIC-based switch fabric controllers with distributed line cards in modular chassis systems.

IC Role / Device Role / Timing Role: Synchronous bridging memory with echo clocks ensuring deterministic setup/hold margins across backplane traces.

Use Value: Four-word burst and 36-bit width match typical fabric cell sizes, minimizing glue logic and serialization overhead.

Telecom Baseband Processing High-Speed Test Equipment Memory

Use Scenario: Temporary storage of OFDM symbol buffers and channel estimation data in 4G/5G baseband units.

IC Role / Device Role / Timing Role: Low-latency, coherent dual-port SRAM supporting simultaneous FFT input loading and result readout.

Use Value: 1.5-cycle read latency mode (DOFF = HIGH) optimizes pipeline depth for symbol processing loops.

Use Scenario: Pattern memory in automated test equipment (ATE) for high-speed digital IC validation.

IC Role / Device Role / Timing Role: Deterministic, jitter-tolerant memory with echo clocks enabling reliable data capture at >600 MHz.

Use Value: Byte write selects (BWS[3:0]) allow rapid test vector patching without full memory reloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar QDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36120 36-Mbit QDR II+, 300 MHz max, 1.5 V core/VDDQ, 165-ball FBGA - lacks ZQ calibration and has fixed 1.5-cycle latency. Lower power and simpler biasing, but no DOFF-configurable latency or programmable drive strength. Preferred where latency flexibility and HSTL impedance tuning are not required.
ISSI IS61WV102436B 1 M × 36 QDR II, 250 MHz max, 1.8 V core, 1.5 V VDDQ, 165-ball FBGA - no echo clocks or PLL; uses single clock domain. Reduced timing margining capability; requires tighter board-level clock distribution and higher-skew tolerance. Selected for cost-sensitive designs with relaxed timing budgets and no need for CQ/CQ capture simplification.

Compared with IDT72T36120 and IS61WV102436B, CY7C1415KV18 uniquely supports configurable read latency, ZQ-calibrated HSTL outputs, and echo clocks - making it optimal for systems demanding maximum timing margin and protocol flexibility at 333 MHz.

Availability

CY7C1415KV18 is available at Aetrix Electronics and suitable for network switching infrastructure, telecom baseband modules, high-speed test instrumentation, and FPGA co-processor memory subsystems requiring stable component supply across extended product lifecycles.

Supply support for CY7C1415KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

CY7C1415KV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for deterministic, low-latency, concurrent-access memory requirements in packet-switched and fabric-based systems.

FAQ

What is the function of the DOFF pin on CY7C1415KV18?

The DOFF (Data Output OFFset) pin configures read latency mode: when asserted HIGH, it enables 1.5-cycle latency for optimized QDR II performance; when LOW, it reverts to 1-cycle latency for QDR I compatibility. This setting directly affects minimum read-to-read timing and must be held stable during operation.

How does the ZQ pin operate in CY7C1415KV18?

ZQ connects to a 240 Ω resistor to ground and enables on-die impedance calibration of HSTL output drivers. During initialization or periodic recalibration, the device measures this reference to adjust pull-up/pull-down strengths, ensuring consistent 25 Ω or 50 Ω output impedance across voltage and temperature variations.

Can CY7C1415KV18 operate with only one clock source?

Yes - in Single Clock Mode, the device uses only the K clock for both read and write operations (C/C inputs tied to K/K), disabling echo clock functionality. This simplifies clock routing but sacrifices timing margin benefits provided by CQ/CQ and independent C/C domains.

What is the purpose of BWS[3:0] signals?

BWS[3:0] are active-LOW byte write selects controlling four independent 9-bit segments of the 36-bit D[35:0] bus. When a BWS bit is deasserted, its corresponding 9-bit byte is ignored during write cycles - enabling partial word updates without read-modify-write sequences or external logic.

CY7C1415KV18-300BZXI Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
36Mbit
Memory Organization:
1M x 36
Memory Interface:
Parallel
Clock Frequency:
300 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1415KV18-300BZXI FAQ

1.How can I place an order for CY7C1415KV18-300BZXI through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1415KV18-300BZXI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1415KV18-300BZXI reliable?

The price and inventory of CY7C1415KV18-300BZXI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1415KV18-300BZXI is usually 5 days.

3.What payment methods are accepted for CY7C1415KV18-300BZXI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1415KV18-300BZXI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1415KV18-300BZXI?

CY7C1415KV18-300BZXI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1415KV18-300BZXI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1415KV18-300BZXI?

For technical support, including CY7C1415KV18-300BZXI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1415KV18-300BZXI requirements.

6.How does Aetrix verify that CY7C1415KV18-300BZXI is sourced from the original manufacturer or authorized distributors?

All CY7C1415KV18-300BZXI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1415KV18-300BZXI meets industry standards.

7.What is the process for return or replacement of CY7C1415KV18-300BZXI?

All CY7C1415KV18-300BZXI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1415KV18-300BZXI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1415KV18-300BZXI part is unused and in its original packaging.

Return procedure for CY7C1415KV18-300BZXI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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